TPH3002LD PRODUCT SUMMARY (TYPICAL) VDS (V) 600 RDS(on) () 0.29 Qrr (nC) GaN Power Low-loss Switch 29 Features D Low Qrr Free-wheeling diode not required High-side Quiet Tab™ for reduced EMI RoHS compliant S Applications K G 8x8 PQFN Package High frequency operation Compact DC-DC converters AC motor drives Battery chargers Switch mode power supplies (bottom view) Absolute Maximum Ratings (TC=25°C unless otherwise stated) Symbol Parameter Limit Value Unit ID25°C Continuous Drain Current @TC=25°C 9 A ID100°C Continuous Drain Current @TC=100°C 6 A 33 A 600 V 750 V ±18 V 65 W Case -55 to 150 °C Junction -55 to 175 °C -55 to 150 °C 260 °C IDM VDSS Pulsed Drain Current (pulse width:100 s) Drain to Source Voltage VTDS Transient Drain to Source Voltage VGSS Gate to Source Voltage PD25°C Maximum Power Dissipation TC Operating Temperature TJ TS TCsold a Storage Temperature Soldering peak Temperature b Thermal Resistance Symbol RΘJC RΘJA Parameter Junction-to-Case Junction-to-Ambient c Typical Unit 2.3 °C /W 45 °C /W Notes a: For 1 usec, duty cycle D=0.1; b: For 10 sec, from the case; 2 c: Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling; with 6cm copper area and 70 μm thickness). April 9, 2014, DA TPH3002LD www.transphormusa.com 1 TPH3002LD Electrical Characteristics Symbol (TC=25C° unless otherwise stated) Parameter Min Typical Max Unit Test Conditions Static VDSS-MAX Maximum Drain-Source Voltage 600 VGS(th) Gate Threshold Voltage 1.35 1.8 - 0.29 - 0.76 - 2.5 - 10 RDS(on) RDS(on) IDSS IDSS Drain-Source On-Resistance (TJ = 25°C) Drain-Source On-Resistance (TJ = 175°C) Drain-to-Source Leakage Current, TJ = 25°C Drain-to-Source Leakage Current, TJ = 150°C V VGS=0V 2.35 V VDS=VGS, ID=1mA 0.35 Ω VGS=8V, ID =5.5A, TJ = 25°C Ω VGS=8V, ID =5.5A,TJ = 175°C µA VDS=600V, VGS=0V, TJ = 25°C µA VDS=600V, VGS=0V, TJ = 150°C 60 Dynamic CISS Input Capacitance - 785 - COSS Output Capacitance - 26 - CRSS Reverse Transfer Capacitance - 3.5 - CO(er) Output Capacitance, energy related - 36 - CO(tr) Output Capacitance, time related - 63 - Qg Total Gate Charge - 6.2 9.3 Qgs Gate-Source Charge - 2.1 - Qgd Gate-Drain Charge - 2.2 - td(on) Turn-On Delay 7 tr Rise Time 3 Td(off) Turn-Off Delay 11 tf Fall Time 4.5 VGS=0 V, VDS=400V, f =1 MHz pF VGS=0 V, VDS=0 V to 480 V nC VDS =100 V b , VGS= 0-4.5 V, ID = 5.5A ns VDS =480 V , VGS= 0-10 V, ID = 5.5 A, RG= 2 Ω Reverse operation IS Reverse Current - - 12 A VSD Reverse Voltage - 2.3 2.9 V VSD Reverse Voltage - 1.8 2.3 V trr Reverse Recovery Time - 30 ns Qrr Reverse Recovery Charge - 29 nC VGS=0 V, TJ=100oC, Duty=5%, >10kHz VGS=0 V, IS=6A, TJ=25oC, Duty=10, >10 kHz VGS=0 V, IS=3A, TJ=25oC, Duty=10%, >10 kHz IS=5.5A, VDD=480 V, di/dt =450 A/s, TJ=25oC Notes b: Qg does not change for VDS>100 V April 9, 2014, DA TPH3002LD www.transphormusa.com 2 TPH3002LD Important Notice Transphorm Gallium Nitride (GaN) Switches provide significant advantages over silicon (Si) Superjunction MOSFETs with lower gate charge, faster switching speeds and smaller reverse recovery charge. GaN Switches exhibit in-circuit switching speeds in excess of 150 V/ns and can be even pushed up to 500V/ns, compared to current silicon technology usually switching at rates less than 50V/ns. The fast switching of GaN devices reduces current-voltage cross-over losses and enables high frequency operation while simultaneously achieving high efficiency. However, taking full advantage of the fast switching characteristics of GaN Switches requires adherence to specific PCB layout guidelines and probing techniques . Transphorm suggests visiting application note “Printed Circuit Board Layout and Probing for GaN Power Switches” before evaluating Transphorm GaN switches. Below are some practical rules that should be followed during the evaluation. When Evaluating Transphorm GaN Switches DO DO NOT Minimize circuit inductance by keeping traces short, both in the drive and power loop. Use shortest sense loop for probing. Attach the probe and its ground connection directly to the test points. April 9, 2014, DA Use long traces in drive circuit, long lead length of the devices. Use differential mode probe, or probe ground clip with long wire. TPH3002LD www.transphormusa.com 8