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TPH3006LD
PRODUCT SUMMARY (TYPICAL)
VDS (V)
600
RDS(on) ()
0.15
Qrr (nC)
GaN Power
Low-loss Switch
54
Features





Low Qrr
Free-wheeling diode not required
Quiet Tab™ for reduced EMI at high dv/dt
RoHS compliant
High frequency operation
D
S
Applications




Compact DC-DC converters
AC motor drives
Battery chargers
Switch mode power supplies
K
G
8x8 PQFN Package
(bottom view)
Absolute Maximum Ratings (TC=25 °C unless otherwise stated)
Symbol
Parameter
Limit Value
Unit
ID25°C
Continuous Drain Current @TC=25 °C
17
A
ID100°C
Continuous Drain Current @TC=100 °C
12
A
Pulsed Drain Current (pulse width:100 s)
60
A
600
V
750
V
±18
V
96
W
Case
-55 to 150
°C
Junction
-55 to 175
°C
-55 to 150
°C
260
°C
IDM
VDSS
Drain to Source Voltage
VTDS
Transient Drain to Source Voltage
VGSS
Gate to Source Voltage
PD25°C
Maximum Power Dissipation
TC
TJ
TS
TCsold
Operating Temperature
a
Storage Temperature
Soldering peak Temperature b
Thermal Resistance
Symbol
RΘJC
RΘJA
Parameter
Junction-to-Case
Junction-to-Ambient
c
Typical
Unit
1.55
°C /W
45
°C /W
Notes
a: For 1 usec, duty cycle D=0.1;
b: For 10 sec, 1.6mm from the case;
2
c: Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling; with 6cm copper
area and 70 μm thickness).
December 30, 2013, DA
TPH3006LD
www.transphormusa.com
1
TPH3006LD
Electrical Characteristics
Symbol
(TC=25 °C unless otherwise stated)
Parameter
Min
Typical
Max
Unit
Test Conditions
600
-
-
V
VGS=0 V
1.35
1.8
2.35
V
VDS=VGS, ID=1 mA
-
0.15
0.18
Ω
VGS=8V, ID =11A, TJ = 25 °C
-
0.33
-
Ω
VGS=8V, ID =11A,TJ = 175 °C
-
2.5
90
µA
VDS=600V, VGS=0V, TJ = 25 °C
-
10
-
µA
VDS=600V, VGS=0V, TJ = 150 °C
-
-
100
Static
VDSS-MAX
VGS(th)
RDS(on)
RDS(on)
IDSS
IDSS
IGSS
Maximum Drain-Source Voltage
Gate Threshold Voltage
Drain-Source On-Resistance
(TJ = 25 °C)
Drain-Source On-Resistance
(TJ = 175 °C)
Drain-to-Source
Leakage Current, TJ = 25 °C
Drain-to-Source
Leakage Current, TJ = 150 °C
Gate-to-Source Forward
Leakage Current
Gate-to-Source Reverse
Leakage Current
VGS= 18 V
nA
-
-
-100
VGS= -18 V
Dynamic
CISS
Input Capacitance
-
740
-
COSS
Output Capacitance
-
133
-
CRSS
Reverse Transfer Capacitance
-
3.6
-
CO(er)
Output Capacitance,
energy related a
-
56
-
CO(tr)
Output Capacitance,
time related a
-
110
-
Qg
Total Gate Charge b
-
6.2
9.3
Qgs
Gate-Source Charge
-
2.1
-
Qgd
Gate-Drain Charge
-
2.2
-
td(on)
tr
Td(off)
tf
Turn-On Delay
Rise Time
Turn-Off Delay
Fall Time
-
10
4
11
4
VGS=0 V, VDS=100 V, f =1 MHz
pF
VGS=0 V, VDS=0 V to 480 V
nC
VDS =100 V a, VGS= 0-4.5 V, ID = 11 A
-
ns
VDS =480 V , VGS= 0-10 V, ID = 11 A,
RG= 2 Ω
Reverse operation
IS
Reverse Current
-
-
11
A
VGS=0 V, TJ=100 oC
VSD
Reverse Voltage
-
2.3
2.8
V
VGS=0 V, IS=11 A, TJ=25 oC
VSD
Reverse Voltage
-
1.6
1.9
V
VGS=0 V, IS=5.5 A, TJ=25 oC
trr
Reverse Recovery Time
-
30
-
ns
Qrr
Reverse Recovery Charge
-
54
-
nC
IS=11 A, VDD=480 V, di/dt =450 A/s,
TJ=25 oC
Notes
a: Fixed while VDS is rising from 0 to 80% VDSS ;
b: Qg does not change for VDS>100 V.
December 30, 2013, DA
TPH3006LD
www.transphormusa.com
2
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