RFH12N35, RFH12N40 Data Sheet October 1998 12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.380Ω File Number 1630.2 • 12A, 350V and 400V • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Formerly developmental type TA17434. Ordering Information PART NUMBER G PACKAGE BRAND RFH12N35 TO-218AC RFH12N35 RFH12N40 TO-218AC RFH12N40 S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-218AC SOURCE DRAIN GATE DRAIN 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFH12N35, RFH12N40 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFH12N35 RFH12N40 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 350 400 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 350 400 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 12 12 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 24 24 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 150 150 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 1.2 W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL MIN TYP MAX UNITS RFH12N35 350 - - V RFH12N40 400 - - V 2 - 4 V - - 1 µA - - 25 µA VGS = ±20V, VDS = 0V - - ±100 nA Drain to Source Breakdown Voltage Gate Threshold Voltage BVDSS VGS(TH) Zero Gate Voltage Drain Current IDSS TEST CONDITIONS ID = 250µA, VGS = 0V VGS = VDS, ID = 250µA, (Figure 8) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC Gate to Source Leakage Current IGSS = 125oC Drain to Source On Resistance (Note 2) rDS(ON) ID = 12A, VGS = 10V, (Figures 6, 7) - - 0.380 Ω Drain to Source On Voltage (Note 2) VDS(ON) ID = 12A, VGS = 10V - - 4.56 V ID ≈ 6A, VDD = 200V, RG = 50Ω, VGS = 10V, RL = 33Ω (Figures 10, 11, 12) - 30 50 ns - 105 150 ns td(OFF) - 480 750 ns tf - 140 200 ns - - 3000 pF - - 900 pF - - 400 pF Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS Reverse-Transfer Capacitance CRSS Thermal Resistance Junction-to-Case RθJC VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9) - - 0.83 oC/W MIN TYP MAX UNITS ISD = 6A - - 1.4 V ISD = 4A, dISD/dt = 100A/µs - 950 - ns RFH12N35, RFH12N40 Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time VSD trr TEST CONDITIONS NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. 2 RFH12N35, RFH12N40 Unless Otherwise Specified 1.2 14 1.0 12 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 10 8 6 4 0.2 2 0.0 0 25 125 50 75 100 TC , CASE TEMPERATURE (oC) 0 25 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 150 25 TC = 25oC, TJ = MAX RATED PULSE DURATION = 80µs DUTY CYCLE ≤ 2% ID (MAX) CONTINUOUS 10 DC OPERATION OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 75 100 125 TC, CASE TEMPERATURE (oC) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 50 VGS = 20V VGS = 8-10V VGS = 7V VGS = 6V 20 15 VGS = 5V 10 5 VGS = 4V 0.1 0 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 1000 0.7 rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) 8 10 12 14 16 0.8 TC = 25oC 20 10 TC = 125oC 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 5. TRANSFER CHARACTERISTICS 3 VGS = 10V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% TC = 125oC 0.6 0.5 TC = 25oC 0.4 TC = -40oC 0.3 0.2 0.1 TC = -40oC 0 1 6 FIGURE 4. SATURATION CHARACTERISTICS VDS = 10V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 0 4 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 30 2 6 0 0 10 20 30 ID, DRAIN CURRENT (A) FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 40 RFH12N35, RFH12N40 Typical Performance Curves 2 ID = 12A VGS = 10V PULSE DURATION = 80µs 3 2 1 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 1 0.5 0 -50 150 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 400 VDS, DRAIN TO SOURCE VOLTAGE (V) 4000 C, CAPACITANCE (pF) 1.5 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 3000 CISS 2000 1000 COSS CRSS 300 VDD = BVDSS GATE SOURCE VOLTAGE 8 VDD = BVDSS 6 RL = 33.3Ω IG(REF) = 2.5mA VGS = 10V 200 4 0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25BVDSS 0.25BVDSS 100 2 DRAIN SOURCE VOLTAGE 0 0 0 10 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 VGS, GATE TO SOURCE VOLTAGE (V) 0 -50 ID = 250µA VDS = 5V NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE ON RESISTANCE 4 Unless Otherwise Specified (Continued) 0 20 IG(REF) t, TIME (µs) IG(ACT) 80 IG(REF) IG(ACT) NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 11. SWITCHING TIME TEST CIRCUIT 4 10% 50% 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS RFH12N35, RFH12N40 Test Circuits and Waveforms (Continued) VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 0.2µF VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G IG(REF) 0 S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 13. GATE CHARGE TEST CIRCUIT IG(REF) 0 FIGURE 14. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. 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