RFP15N15 Data Sheet October 1998 15A, 150V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.150Ω File Number 1443.2 • 15A, 150V • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Formerly developmental type TA09195. Ordering Information G PART NUMBER RFP15N15 PACKAGE TO-220AB BRAND RFP15N15 S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-220AB DRAIN (TAB) 1 SOURCE DRAIN GATE CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP15N15 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP15N15 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 150 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 150 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 15 40 A A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 0.6 W W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC Gate to Source Leakage Current IGSS MIN TYP MAX UNITS 150 - - V 2 - 4 V - - 1 µA 25 µA = 125oC VGS = ±20V, VDS = 0V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 15A, VGS = 10V (Figures 6, 7) - - 0.150 Ω Drain to Source On Voltage (Note 2) VDS(ON) ID = 15A, VGS = 10V - - 2.25 V VDS = 25V, VGS = 0V, f = 1MHz (Figure 9) - - 1700 pF Input Capacitance CISS Output Capacitance COSS - - 750 pF Reverse-Transfer Capacitance CRSS - - 350 pF Turn-On Delay Time td(ON) - 50 75 ns - 150 225 ns td(OFF) - 185 280 ns tf - 125 190 ns - - 1.67 oC/W Rise Time VDD = 75V, ID ≈ 7.5A, RG = 50Ω, VGS = 10V RL = 9.9Ω, (Figures 10, 11, 12) tr Turn-Off Delay Time Fall Time Thermal Resistance Junction-to-Case Source to Drain Diode Specifications PARAMETERS SYMBOL Source to Drain Diode Voltage (Note 2) Reverse Recovery Time VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = 7.5A - - 1.4 V ISD = 4A, dISD/dt = 100A/µs - 200 - ns NOTES: 2. Pulse test: width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. 2 RFP15N15 Typical Performance Curves Unless Otherwise Specified 16 POWER DISSIPATION MULTIPLIER 1.2 14 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 12 10 8 6 4 0.2 0 2 0 0 50 100 25 150 50 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 100 125 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 30 TC = 25oC CURVE MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 75 TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 PULSE DURATION = 80µs DUTY CYCLE ≤ 2% TC = 25oC 10V 7V 8V 20 VGS = 20V 6V 10 5V 3.6V 4V 0.1 1 10 100 VDS, DRAIN TO SOURCE (V) 1000 0 0 40 TC = 25oC 30 TC = -40oC TC = 125oC 25 20 15 10 0 TC = 125oC 0 1 2 3 6 7 0.30 VDS = 10V 35 PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 5 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. SATURATION CHARACTERISTICS rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 1 TC = -40oC 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 5. TRANSFER CHARACTERISTICS 3 9 10 VGS = 10V PULSE DURATION = 80µs 0.25 DUTY CYCLE ≤ 2% TC = 125oC 0.20 TC = 25oC 0.15 RATURE CASE TEMPE TC = -40oC 0.10 0.05 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) 30 35 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT RFP15N15 1.4 VGS = 10V ID = 15A PULSE DURATION = 80µs 1.5 1.0 0.5 0 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 1 0.8 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 1600 VDS, DRAIN TO SOURCE VOLTAGE (V) 150 1400 CISS C, CAPACITANCE (pF) 1.2 0.6 -50 200 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1200 112.5 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 1000 800 600 400 COSS 200 CRSS 0 VGS = VDS ID = 250µA 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 VDD = BVDSS GATE SOURCE VOLTAGE 8 VDD = BVDSS 6 RL = 10Ω IG(REF) = 1mA 75 VGS = 10V 4 0.75BVDSS 0.50BVDSS 0.25BVDSS 37.5 2 DRAIN SOURCE VOLTAGE 0 50 0 20 IG(REF) IG(ACT) t, TIME (µs) 80 VGS, GATE TO SOURCE VOLTAGE (V) 2.0 (Continued) NORMALIZED GATE THRESHOLD VOLTAGE rDS(ON), NORMALIZED DRAIN TO SOURCE ON RESISTANCE Typical Performance Curves Unless Otherwise Specified IG(REF) IG(ACT) NOTE: Refer toIntersil Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 11. SWITCHING TIME TEST CIRCUIT 4 10% 50% 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS RFP15N15 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. 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