Datasheet

UNISONIC TECHNOLOGIES CO., LTD
60N08
Preliminary
Power MOSFET
60 Amps, 80 Volts
N-CHANNEL POWER MOSFET
„
DESCRIPTION
The UTC 60N08 is an N-channel power MOSFET adopting UTC’s
advanced planar stripe and DMOS technology to provide designers
with perfectly high switching speed and minimum on-state resistance.
It also can withstand high energy pulse in the avalanche and
commutation modes.
The UTC 60N08 is applied in low voltage applications such as DC
motor control, automotive, and high efficiency switching for DC/DC
converters.
„
FEATURES
* 60A, 80V, RDS(ON)=0.024Ω @ VGS=10V
* High switching speed
* 100% avalanche tested
„
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
60N08L-TA3-T
60N08G-TA3-T
60N08L-TF1-T
60N08G-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
1
G
G
Pin Assignment
2
3
D
S
D
S
Packing
Tube
Tube
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60N08
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
80
V
Gate to Source Voltage
VGSS
±25
V
Continuous
ID
60
A
Continuous Drain Current
Pulsed
IDM
176
A
Single Pulsed (Note 2)
EAS
560
mJ
Avalanche Energy
8.5
mJ
Repetitive (Note 1)
EAR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
6.5
V/ns
TO-220
100
W
Power Dissipation
PD
TO-220F1
70
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
TO-220
Junction to Ambient
TO-220F1
TO-220
Junction to Case
TO-220F1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
62.5
62.5
1.25
1.77
UNIT
°C/W
°C/W
°C/W
°C/W
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60N08
Preliminary
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
SYMBOL
TEST CONDITIONS
BVDSS
VGS=0V, ID=250µA
ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C
VDS=80V, VGS=0V
IDSS
VDS=64V, TC=150°C
VDS=0V ,VGS=+25V
IGSS
VDS=0V ,VGS=-25V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=30A
Forward Transconductance
gFS
VDS=30V, ID=30A (Note 4)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V,VGS=0V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=64V, VGS=10V, ID=60A
Gate-Source Charge
QGS
(Note 4,5)
Gate-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=40V, ID=60A,
RG=25Ω (Note 4,5)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS =60A, VGS=0V
Body Diode Reverse Recovery Time
tRR
VGS=0V, IS=60A,
dIF/dt=100A/μs (Note 4)
Body Diode Reverse Recovery Charge
QRR
Notes : 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=0.4mH, IAS=44A, VDD=25V, RG=25Ω, Starting TJ=25°C
3. ISD ≤60A, di/dt ≤300A/μs, VDD ≤BVDSS, Starting TJ=25°C
4. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
5. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
80
0.07
1
10
+100
-100
2.0
V
V/°C
µA
µA
nA
nA
4.0
0.018 0.024
31
V
Ω
S
1450 1900
520
680
120
155
pF
pF
pF
50
9.3
25
16.5
200
70
95
nC
nC
nC
ns
ns
ns
ns
65
45
410
150
200
60
176
1.5
73
185
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A
A
V
ns
μC
60N08
„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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15N65
„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
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15N65
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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