Analog Power AM1580CE N & P-Channel 80-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed PRODUCT SUMMARY rDS(on) (mΩ) VDS (V) 740 @ VGS = 10V 80 810 @ VGS = 4.5V 3300 @ VGS = -10V -80 3400 @ VGS = -4.5V ID (A) 0.52 0.50 -0.25 -0.24 SC70-6 Typical Applications: • LED Inverter Circuits • DC/DC Conversion Circuits • Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 80 -80 VGS Gate-Source Voltage ±20 ±20 TA=25°C 0.52 -0.25 ID Continuous Drain Current a TA=70°C 0.43 -0.21 b IDM Pulsed Drain Current 2 -2 a I 0.4 -0.4 Continuous Source Current (Diode Conduction) S T =25°C 0.3 0.3 A PD Power Dissipation a TA=70°C 0.21 0.21 TJ, Tstg Operating Junction and Storage Temperature Range -55 to 150 Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 415 RθJA 460 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Preliminary 1 Publication Order Number: DS_AM1580CE_1A Analog Power AM1580CE Electrical Characteristics Parameter Gate-Source Threshold Voltage Symbol VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-Resistance a rDS(on) Forward Transconductance a gfs Diode Forward Voltage a VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Preliminary Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA (N-ch) VDS = VGS, ID = -250 uA (P-ch) VDS = 0 V, VGS = ±20 V VDS = 64 V, VGS = 0 V (N-ch) VDS = -64 V, VGS = 0 V (P-ch) VDS = 5 V, VGS = 10 V (N-ch) VDS = -5 V, VGS = -10 V (P-ch) VGS = 10 V, ID = 0.44 A (N-ch) VGS = 4.5 V, ID = 0.35 A (N-ch) VGS = -10 V, ID = -0.2 A (P-ch) VGS = -4.5 V, ID = -0.16 A (P-ch) VDS = 15 V, ID = 0.44 A (N-ch) VDS = -15 V, ID = -0.2 A (P-ch) IS = 0.2 A, VGS = 0 V (N-ch) IS = -0.2 A, VGS = 0 V (P-ch) Dynamic b N - Channel VDS = 40 V, VGS = 4.5 V, ID = 0.44 A N - Channel VDS = 40 V, RL = 91 Ω, ID = 0.44 A, VGEN = 10 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 Mhz P - Channel VDS = -40 V, VGS = -4.5 V, ID = -0.2 A P - Channel VDS = -40 V, RL = 200 Ω, ID = -0.2 A, VGEN = -10 V, RGEN = 6 Ω P - Channel VDS = -15 V, VGS = 0 V, f = 1 Mhz 2 Min Typ Max 1 -1 ±10 1 -1 0.8 -0.4 Unit V V uA uA A A 740 810 3300 3400 9 7 0.76 -0.82 1.6 0.6 1.0 3 5 12 4 77 24 14 2.1 0.7 1.0 4 6 9 3 100 24 13 mΩ mΩ S S V V nC ns pF nC ns pF Publication Order Number: DS_AM1580CE_1A Analog Power AM1580CE Typical Electrical Characteristics - N-channel 0.5 1.5 0.4 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 1 4V 4.5V 0.5 6V,8V,10V 0.3 0.2 0.1 0.0 0 0 0.1 0.2 0.3 0.4 0 0.5 1 ID-Drain Current (A) 1. On-Resistance vs. Drain Current 3 4 5 2. Transfer Characteristics 1 1.5 TJ = 25°C ID = 0.44A TJ = 25°C IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 VGS - Gate-to-Source Voltage (V) 1 0.5 0 0.1 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 0.5 150 F = 1MHz ID - Drain Current (A) 0.3 Capacitance (pf) 10V,8V,6V,4.5V 0.4 4V 0.2 100 Ciss 50 Coss 0.1 Crss 0 0 0 0.1 0.2 0.3 0.4 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM1580CE_1A Analog Power AM1580CE Typical Electrical Characteristics - N-channel 2 VDS = 40V ID = 0.44A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 0 1.5 1 0.5 0 1 2 3 4 -50 -25 25 50 75 100 125 150 TJ -JunctionTemperature(°C) Qg - Total Gate Charge (nC) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 15 PEAK TRANSIENT POWER (W) 10 10 uS 100 uS ID Current (A) 0 1 mS 1 10 mS 100 mS 1 SEC 10 SEC 0.1 100 SEC DC 1 Idm limit 10 5 Limited by RDS 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 0.1 RθJA = 460 °C /W 0.05 0.02 P(pk) Single Pulse t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient Preliminary 4 Publication Order Number: DS_AM1580CE_1A Analog Power AM1580CE Typical Electrical Characteristics - P-channel 0.5 TJ = 25°C 0.4 3.5 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) 4 3V 3 3.5V,4V,4.5V,6V,8V,10V 0.3 0.2 0.1 0.0 2.5 0 0.1 0.2 0.3 0.4 ID-Drain Current (A) 0 0.5 1 1. On-Resistance vs. Drain Current 3 4 2. Transfer Characteristics 1 4 TJ = 25°C ID = -0.2A TJ = 25°C 3 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 VGS - Gate-to-Source Voltage (V) 2 1 0 0.1 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 150 0.5 F = 1MHz 10V,8V,6V,4.5V,4V,3.5V Ciss Capacitance (pf) ID - Drain Current (A) 0.4 3V 0.3 0.2 100 50 Coss 0.1 Crss 0 0 0 0.5 1 1.5 2 0 5 10 15 20 1000 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics Preliminary 6. Capacitance 5 Publication Order Number: DS_AM1580CE_1A Analog Power AM1580CE Typical Electrical Characteristics - P-channel 2 VDS = -40V ID = -0.2A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 1.5 1 0.5 0 0 1 2 3 -50 4 -25 25 50 75 100 125 150 TJ -JunctionTemperature(°C) Qg - Total Gate Charge (nC) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 10 PEAK TRANSIENT POWER (W) 15 10 uS 100 uS ID Current (A) 0 1 mS 1 10 mS 100 mS 1 SEC 10 SEC 0.1 100 SEC DC 1 Idm limit Limited by RDS 10 0 0.001 0.01 0.1 1 10 100 5 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA 0.1 RθJA = 460 °C /W 0.05 0.02 P(pk) Single Pulse t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient Preliminary 6 Publication Order Number: DS_AM1580CE_1A Analog Power AM1580CE Package Information Preliminary 7 Publication Order Number: DS_AM1580CE_1A