Analog Power AM3560C N & P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed -60 rDS(on) (mΩ) 153 @ VGS = 10V 185 @ VGS = 4.5V 310 @ VGS = -10V 405 @ VGS = -4.5V ID(A) 2.3 2.1 -1.6 -1.4 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 60 -60 VGS Gate-Source Voltage ±20 ±20 TA=25°C 2.3 -1.6 ID Continuous Drain Current a TA=70°C 1.9 -1.3 IDM Pulsed Drain Current b 10 -10 a I 2.5 -2.5 Continuous Source Current (Diode Conduction) S T =25°C 1.15 1.15 A PD Power Dissipation a TA=70°C 0.7 0.7 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 110 RθJA 150 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM3560C_1A Analog Power AM3560C Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance rDS(on) Forward Transconductance gfs Diode Forward Voltage VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance © Preliminary Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA (N-ch) VDS = VGS, ID = -250 uA (P-ch) VDS = 0 V, VGS = ±20 V VDS = 20 V, VGS = 0 V (N-ch) VDS = -20 V, VGS = 0 V (P-ch) VDS = 5 V, VGS = 10 V (N-ch) VDS = -5 V, VGS = -10 V (P-ch) VGS = 10 V, ID = 1.8 A (N-ch) VGS = 4.5 V, ID = 1.5 A (N-ch) VGS = -10 V, ID = -1.2 A (P-ch) VGS = -4.5 V, ID = -1 A (P-ch) VDS = 15 V, ID = 1.8 A (N-ch) VDS = -15 V, ID = -1.2 A (P-ch) IS = 1.2 A, VGS = 0 V (N-ch) IS = -1.2 A, VGS = 0 V (P-ch) Dynamic N - Channel VDS = 30 V, VGS = 4.5 V, ID = 1.8 A N - Channel VDD = 30 V, RL = 16.6 Ω, ID = 1.8 A, VGEN = 10 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P - Channel VDS = -30 V, VGS = 4.5 V, ID = -1.2 A P - Channel VDD = -30 V, RL = 25 Ω, ID = -1.2 A, VGEN = -10 V, RGEN = 6 Ω P - Channel VDS = -15 V, VGS = 0 V, f = 1 MHz 2 Min Typ Max 1 -1 ±100 1 -1 4 -4 Unit V V nA uA A A 153 185 310 405 15 20 0.78 -0.82 4.9 1.3 2.5 4 5 16 4 297 40 28 4.9 1.5 2.2 6 5 19 7 385 40 28 mΩ mΩ S S V V nC ns pF nC ns pF Publication Order Number: DS_AM3560C_1A Analog Power AM3560C Typical Electrical Characteristics - N-channel 5 TJ = 25°C 4 0.15 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) 0.2 3.5V 4V 0.1 4.5V,6V,8V,10V 0.05 3 2 1 0 0 0 1 2 3 4 0 5 1 ID-Drain Current (A) 1. On-Resistance vs. Drain Current 3 4 5 6 2. Transfer Characteristics 100 0.6 TJ = 25°C ID = 1.8A 0.5 TJ = 25°C IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 VGS - Gate-to-Source Voltage (V) 0.4 0.3 0.2 10 1 0.1 0.1 0 0 2 4 6 8 0.01 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 3. On-Resistance vs. Gate-to-Source Voltage 1.6 4. Drain-to-Source Forward Voltage 5 600 F = 1MHz 10V,8V,6V,4.5V 500 Capacitance (pf) 4 ID - Drain Current (A) 1.4 VSD - Source-to-Drain Voltage (V) 4V 3 3.5V 2 1 400 Ciss 300 200 100 0 Coss Crss 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM3560C_1A Analog Power AM3560C Typical Electrical Characteristics - N-channel 2 VDS = 30V 9 ID = 1.8A 8 RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 7 6 5 4 3 2 1.5 1 1 0 0.5 0 2 4 6 8 10 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 35 PEAK TRANSIENT POWER (W) 100 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 DC 1 Idm limit 30 25 20 15 10 5 Limited by RDS 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 150°C /W 0.1 0.05 0.02 Single Pulse P(pk) t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM3560C_1A Analog Power AM3560C Typical Electrical Characteristics - P-channel 5 0.6 TJ = 25°C 4 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) 0.5 0.4 3.5V 0.3 4V 0.2 4.5V,6V,8V,10V 3 2 1 0.1 0 0 0 1 2 3 4 0 1 3 4 5 VGS - Gate-to-Source Voltage (V) ID-Drain Current (A) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 100 0.8 TJ = 25°C ID = -1.2A TJ = 25°C 0.6 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 0.4 0.2 0 10 1 0.1 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 600 4 F = 1MHz 10V,8V,6V,4.5V 4V Capacitance (pf) ID - Drain Current (A) 500 3 3.5V 2 Ciss 400 300 200 1 100 Coss Crss 0 0 0 0.4 0.8 1.2 0 1.6 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 5 Publication Order Number: DS_AM3560C_1A Analog Power AM3560C Typical Electrical Characteristics - P-channel 2 VDS = -30V ID = -1.2A 9 RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 7 6 5 4 3 2 1.5 1 1 0 0.5 0 2 4 6 8 10 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 100 PEAK TRANSIENT POWER (W) 35 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 DC 1 Idm limit Limited by RDS 30 25 20 15 10 5 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 150°C /W 0.1 0.05 0.02 P(pk) Single Pulse t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 6 Publication Order Number: DS_AM3560C_1A Analog Power AM3560C Package Information Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. 4. The Package Top May Be Smaller Than The Package Bottom. 5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. © Preliminary 7 Publication Order Number: DS_AM3560C_1A