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Analog Power
AM1590CE
N & P-Channel 100-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
PRODUCT SUMMARY
rDS(on) (Ω)
VDS (V)
1.2 @ VGS = 10V
100
1.5 @ VGS = 4.5V
5.5 @ VGS = -10V
-100
6 @ VGS = -4.5V
ID (A)
0.42
0.37
-0.20
-0.19
SC70-6
Typical Applications:
• LED Inverter Circuits
• DC/DC Conversion Circuits
• Motor drives
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Nch Limit Pch Limit
VDS
Drain-Source Voltage
100
-100
VGS
Gate-Source Voltage
±20
±20
TA=25°C
0.42
-0.20
ID
Continuous Drain Current a
TA=70°C
0.35
-0.16
b
IDM
Pulsed Drain Current
2
-1
a
I
0.37
-0.35
Continuous Source Current (Diode Conduction)
S
T
=25°C
0.3
0.3
A
PD
Power Dissipation a
TA=70°C
0.21
0.21
TJ, Tstg
Operating Junction and Storage Temperature Range
-55 to 150
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
415
RθJA
460
Units
V
A
A
W
°C
Units
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM1590CE_1A
Analog Power
AM1590CE
Electrical Characteristics
Parameter
Gate-Source Threshold Voltage
Symbol
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-Resistance a
rDS(on)
Forward Transconductance a
gfs
Diode Forward Voltage a
VSD
Test Conditions
Static
VDS = VGS, ID = 250 uA (N-ch)
VDS = VGS, ID = -250 uA (P-ch)
VDS = 0 V, VGS = ±20 V
VDS = 80 V, VGS = 0 V
(N-ch)
VDS = -80 V, VGS = 0 V
(P-ch)
VDS = 5 V, VGS = 10 V
(N-ch)
VDS = -5 V, VGS = -10 V (P-ch)
VGS = 10 V, ID = 0.3 A
(N-ch)
VGS = 4.5 V, ID = 0.24 A (N-ch)
VGS = -10 V, ID = -0.15 A (P-ch)
VGS = -4.5 V, ID = -0.12 A (P-ch)
VDS = 15 V, ID = 0.3 A
(N-ch)
VDS = -15 V, ID = -0.15 A (P-ch)
IS = 0.18 A, VGS = 0 V
(N-ch)
IS = -0.17 A, VGS = 0 V
(P-ch)
Min
Typ
Max
1
-1
±10
1
-1
0.7
-0.3
Unit
V
V
uA
uA
A
A
1.2
1.5
5.5
6
11
10
0.75
-0.82
Ω
Ω
S
S
V
V
Dynamic b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
© Preliminary
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
N - Channel
VDS = 50 V, VGS = 4.5 V, ID = 0.3 A
N - Channel
VDS = 50 V, RL = 166.7 Ω,
ID = 0.3 A,
VGEN = 10 V, RGEN = 6 Ω
N - Channel
VDS = 15 V, VGS = 0 V, f = 1 Mhz
P - Channel
VDS = -50 V, VGS = -4.5 V, ID = -0.15
A
P - Channel
VDS = -50 V, RL = 333.4 Ω,
ID = -0.15 A,
VGEN = -10 V, RGEN = 6 Ω
P - Channel
VDS = -15 V, VGS = 0 V, f = 1 Mhz
2
1.2
0.2
0.8
3
4
13
5
62
19
9
1.2
0.4
0.5
5
5
10
5
84
18
9
nC
ns
pF
nC
ns
pF
Publication Order Number:
DS_AM1590CE_1A
Analog Power
AM1590CE
Typical Electrical Characteristics - N-channel
3
0.5
0.4
2
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
TJ = 25°C
3.5V
1
4V,4.5V,6V,8V,10V
0.3
0.2
0.1
0.0
0
0
0.1
0.2
0.3
ID-Drain Current (A)
0
0.4
1
1. On-Resistance vs. Drain Current
3
4
5
2. Transfer Characteristics
1
0.4
TJ = 25°C
0.35
TJ = 25°C
ID = 0.3A
0.3
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
2
VGS - Gate-to-Source Voltage (V)
0.25
0.2
0.15
0.1
0.1
0.05
0
0.01
0
2
4
6
8
10
0
VGS - Gate-to-Source Voltage (V)
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
0.4
150
F = 1MHz
0.3
3.5V
Capacitance (pf)
ID - Drain Current (A)
10V,8V,6V,4.5V,4V
0.2
100
Ciss
50
0.1
Coss
Crss
0
0
0
0.2
0.4
0.6
0.8
0
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
5
6. Capacitance
3
Publication Order Number:
DS_AM1590CE_1A
Analog Power
AM1590CE
Typical Electrical Characteristics - N-channel
2.5
VDS = 50V
ID = 0.3A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
10
8
6
4
2
0
2
1.5
1
0.5
0
1
2
3
-50
-25
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
Qg - Total Gate Charge (nC)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
15
PEAK TRANSIENT POWER (W)
10
10 uS
100 uS
ID Current (A)
0
1 mS
1
10 mS
100 mS
1 SEC
10 SEC
0.1
100 SEC
1
DC
Idm limit
10
5
Limited by
RDS
0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
RθJA(t) = r(t) + RθJA
0.2
0.1
0.1
RθJA = 460 °C /W
0.05
0.02
P(pk)
Single Pulse
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
4
Publication Order Number:
DS_AM1590CE_1A
Analog Power
AM1590CE
10
0.5
8
0.4
TJ = 25°C
6
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
Typical Electrical Characteristics - P-channel
3.5V
4V,4.5V,6V,8V,10V
4
0.3
0.2
0.1
2
0.0
0
0
0.1
0.2
0.3
0.4
ID-Drain Current (A)
0
0.5
1
1. On-Resistance vs. Drain Current
4
5
1
TJ = 25°C
ID = -0.15A
TJ = 25°C
15
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
3
2. Transfer Characteristics
20
10
5
0
0.1
0.01
0
2
4
6
8
10
0
VGS - Gate-to-Source Voltage (V)
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
120
0.5
F = 1MHz
10V,8V,6V,4.5V,4V
100
Capacitance (pf)
0.4
ID - Drain Current (A)
2
VGS - Gate-to-Source Voltage (V)
3.5V
0.3
0.2
Ciss
80
60
40
Coss
0.1
20
0
Crss
0
0
1
2
3
4
0
5
10
15
20
1000
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
6. Capacitance
5
Publication Order Number:
DS_AM1590CE_1A
Analog Power
AM1590CE
Typical Electrical Characteristics - P-channel
2.5
VDS = -50V
ID = -
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
10
8
6
4
2
2
1.5
1
0.5
0
0
1
2
-50
3
-25
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
Qg - Total Gate Charge (nC)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
10
PEAK TRANSIENT POWER (W)
15
10 uS
100 uS
ID Current (A)
0
1 mS
1
10 mS
100 mS
1 SEC
10 SEC
0.1
100 SEC
1
DC
Idm limit
Limited by
RDS
10
0
0.001
0.01
0.1
1
10
100
5
1000
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
RθJA(t) = r(t) + RθJA
0.1
RθJA = 460 °C /W
0.05
0.02
P(pk)
Single Pulse
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
6
Publication Order Number:
DS_AM1590CE_1A
Analog Power
AM1590CE
Package Information
© Preliminary
7
Publication Order Number:
DS_AM1590CE_1A