Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UMBF170
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE
„
DESCRIPTION
The UMBF170 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
„
FEATURES
* RDS(ON)<[email protected]=10V
* RDS(ON)<[email protected]=4.5V
* Low Reverse Transfer Capacitance ( CRSS = typical 7.5 pF )
* Fast Switching Capability
* Improved dv/dt Capability, High Ruggedness
„
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UMBF170l-AE2-R
UMBF170G-AE2-R
„
MARKING
„
ABSOLUTE MAXIMUM RATINGS
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
SOT-23-3
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
1 of 4
QW-R502-291.C
UMBF170
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage (RG=25KΩ)
VDGS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (VGS=10V)
ID
300
mA
Peak Drain Current (tP≦10µs)
IDM
1.2
A
Power Dissipation
PD
0.83
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Junction-to-Ambient
„
SYMBOL
θJA
RATINGS
350
UNIT
K/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
Drain-Source Leakage Current
IDSS
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
IGSS
Static Drain-Source On-Resistance
VGS(TH)
RDS(ON)
TEST CONDITIONS
VGS=0 V, ID=10µA
VDS=48V, VGS=0V
VDS=25V, VGS=0V
VGS= ±15V, VDS=0V
60
75
0.01 1.0
5
500
10 100
V
µA
nA
nA
VDS=VGS, ID=1mA
VGS=10V, ID=300mA
VGS=4.5V, ID=75mA
VDS=10V, ID=200mA
1
2
2.8
3.8
300
V
5
5.3
25
18
7.5
40
30
10
pF
pF
pF
3
12
10
15
ns
ns
0.85
1.5
300
1.2
V
mA
A
ns
nC
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=10 V, VGS=0 V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
VDD=50V, VGS=10V, RGS=50Ω
Turn-ON Delay Time
tD(ON)
R
Turn-OFF Delay Time
tD(OFF)
G=50Ω, RD=250Ω
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS =300mA, VGS=0V
Maximum Body-Diode Continuous Current
IS
pulsed; tP≦10µs
Peak Source (Diode Forward) Current
ISM
Body Diode Reverse Recovery Time
tRR
IS=300mA, dI/dt=-100A/μs,
VGS=0V, VDS=25V
Body Diode Reverse Recovery Charge
QRR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
100
30
30
Ω
mS
2 of 3
QW-R502-291.C
UMBF170
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (mA)
Drain Current, ID (mA)
Drain Current, ID (mA)
Drain Current, ID (µA)
„
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R502-291.C
Similar pages