Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2NNPP06
Power MOSFET
60V COMPLEMENTARY
ENHANCEMENT MODE
MOSFET H-BRIDGE
(N-CHANNEL/P-CHANNEL)

DESCRIPTION
The UTC 2NNPP06 is a complementary enhancement mode
MOSFET H-BRIDGE, it uses UTC advanced technology to provide
customers low on resistance, low gate charge and low threshold
voltage.
The UTC 2NNPP06 is universally applied in DC-AC Inverters and
DC Motor control.

SOP-8
FEATURES
* N-CHANNEL
- ID: 2A / VDSS: 60V
* P-CHANNEL
- ID: -1.9A / VDSS: -60V
* High switching speed

SYMBOL

ORDERING INFORMATION
Ordering Number
2NNPP06G-S08-R
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
Package
SOP-8
Packing
Tape Reel
1 of 6
QW-R502-781.D
2NNPP06

MARKING

PIN CONFIGURATION
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
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2NNPP06

Power MOSFET
ABSOLUTE MAXIMUM RATINGS
RATINGS
UNIT
N-CHANNEL P-CHANNEL
Gate-Source Voltage
VGSS
±20
±20
V
Drain-Source Voltage
VDSS
60
-60
V
ID
2.0
-1.9
A
Continuous VGS=10V, TA=25°C, t ≤10 sec
Drain Current
Pulsed
VGS=10V, TA=25°C (Note 1)
IDM
7.1
-6.03
A
TA=25°C
0.87
W
PD
Power Dissipation
Derating
6.94
mW/°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
PARAMETER

SYMBOL
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 1)
θJA
144
°C/W
Note: Pulse width ≤ 300μs; duty cycle ≤ 2%. The pulse current is limited by the maximum junction temperature.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
FOR N-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Static Drain-Source On-State Resistance (Note 1)
RDS(ON)
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=60V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
60
VDS=VGS, ID=250µA
VGS=10V, ID=2.5A
VGS=4.5V, ID=1.3A
1
DYNAMIC PARAMETERS
Input Capacitance (Note 3)
CISS
VGS=0V, VDS=25V,
Output Capacitance (Note 3)
COSS
f=1.0MHz
Reverse Transfer Capacitance (Note 3)
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2, 3)
tD(ON)
Rise Time (Note 2, 3)
tR
VDD=30V, ID=1A,
Turn-OFF Delay Time (Note 2, 3)
tD(OFF) RG≈6Ω, VGS=10V
Fall-Time (Note 2, 3)
tF
Total Gate Charge (Note 3)
QG
VGS=10V, VDS=30V,
Gate to Source Charge (Note 3)
QGS
ID=1.8A
Gate to Drain Charge (Note 3)
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
TA=25°C (Note 2)
Maximum Body-Diode Pulsed Current
ISM
TA=25°C (Note 3)
Drain-Source Diode Forward Voltage(Note 1)
VSD
IS=2.5A, VGS=0V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
0.5
+100
-100
V
µA
nA
nA
3
0.25
0.35
V
Ω
Ω
350
62
30
pF
pF
pF
30
26
96
28
19
2.6
3.9
ns
ns
ns
ns
nC
nC
nC
0.9
2
7.1
1.1
A
A
V
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2NNPP06
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Power MOSFET
ELECTRICAL CHARACTERISTICS(CONT.) (TA=25°C, unless otherwise specified)
FOR P-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance (Note 1)
SYMBOL
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
TEST CONDITIONS
ID=-250µA, VGS=0V
VDS=-60V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
-60
VDS=VGS, ID=-250µA
VGS=-10V, ID=-2A
VGS=-4.5V, ID=-0.8A
-1
DYNAMIC PARAMETERS
Input Capacitance (Note 3)
CISS
VGS=0V, VDS=-25V,
Output Capacitance (Note 3)
COSS
f=1.0MHz
Reverse Transfer Capacitance (Note 3)
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2, 3)
tD(ON)
Rise Time (Note 2, 3)
tR
VDD=-30V, ID=-1A,
Turn-OFF Delay Time (Note 2, 3)
tD(OFF) RG≈6Ω, VGS=-10V
Fall-Time (Note 2, 3)
tF
Total Gate Charge (Note 3)
QG
VGS=-10V, VDS=-30V,
Gate to Source Charge (Note 3)
QGS
ID=-0.9A
Gate to Drain Charge (Note 3)
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
TA=25°C (Note 2)
Maximum Body-Diode Pulsed Current
ISM
TA=25°C (Note 3)
Drain-Source Diode Forward Voltage (Note 1)
VSD
IS=-2A, VGS=0V
Notes: 1. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. For design aid only, not subject to production testing.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
-0.5
+100
-100
V
µA
nA
nA
-3
0.4
0.6
V
Ω
Ω
550
65
35
pF
pF
pF
35
32
165
50
21
3
3
ns
ns
ns
ns
nC
nC
nC
-1.9
-6.03
-0.9 -1.1
A
A
V
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
QG
12V
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Gate Charge Waveforms
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2NNPP06
Power MOSFET
Drain Current, ID (A)
Drain Current, -ID (A)
TYPICAL CHARACTERISTICS

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 6
QW-R502-781.C
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