Datasheet

AOK9N90
900V,9A N-Channel MOSFET
General Description
Product Summary
The AOK9N90 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this part can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
[email protected]
9A
RDS(ON) (at VGS=10V)
< 1.3Ω
100% UIS Tested
100% Rg Tested
Top View
D
TO-247
G
S
G
S
D
AOK9N90
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
ID
AOK9N90
900
Units
V
±30
V
9
6
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
3.6
A
Repetitive avalanche energy C
EAR
194
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-Case
EAS
dv/dt
388
5
368
mJ
V/ns
W
2.9
-55 to 150
W/ oC
°C
300
°C
AOK9N90
40
0.5
0.34
Units
°C/W
°C/W
°C/W
Rev.1.0 June 2013
PD
TJ, TSTG
TL
Symbol
RθJA
RθCS
RθJC
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34
Page 1 of 5
AOK9N90
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
900
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
1000
V
0.9
V/ oC
VDS=900V, VGS=0V
1
VDS=720V, TJ=125°C
10
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
ISM
4
4.5
nΑ
V
VGS=10V, ID=4.5A
1
1.3
Ω
VDS=40V, ID=4.5A
13
1
V
Maximum Body-Diode Continuous Current
9
A
Maximum Body-Diode Pulsed Current
34
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
3.4
S
1700
2130
2560
pF
VGS=0V, VDS=25V, f=1MHz
100
152
200
pF
8
14
20
pF
VGS=0V, VDS=0V, f=1MHz
0.6
1.3
2.0
Ω
46
58
nC
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
±100
µA
35
VGS=10V, VDS=720V, ID=9A
9.5
nC
Qgd
Gate Drain Charge
20.5
nC
tD(on)
Turn-On DelayTime
45
ns
tr
Turn-On Rise Time
80
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=9A,dI/dt=100A/µs,VDS=100V
450
568
690
Qrr
Body Diode Reverse Recovery Charge IF=9A,dI/dt=100A/µs,VDS=100V
6.0
7.8
10.0
Body Diode Reverse Recovery Time
VGS=10V, VDS=450V, ID=9A,
RG=25Ω
116
ns
60
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.6A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0 June 2013
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Page 2 of 5
AOK9N90
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
20
-55°C
VDS=40V
16
10V
6.5V
10
125°C
ID(A)
ID (A)
12
6V
8
1
VGS=5.5V
4
25°C
0
0
5
10
15
20
25
0.1
30
2
VDS (Volts)
Fig 1: On-Region Characteristics
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
3
Normalized On-Resistance
2
1.6
VGS=10V
RDS(ON) (Ω)
4
1.2
0.8
0.4
0
0
4
8
12
16
2.5
VGS=10V
ID=4.5A
2
1.5
1
0.5
0
-100
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.0E+02
1.0E+00
40
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
1
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
0.9
1.0E-04
0.8
-100
1.0E-05
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
Rev.1.0 June 2013
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AOK9N90
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VDS=720V
ID=9A
Ciss
1000
Capacitance (pF)
VGS (Volts)
12
9
6
Coss
100
Crss
10
3
0
1
0
14
28
42
56
70
0.1
10
100
100
12
10
RDS(ON)
limited
10
10µs
8
100µ
ID (Amps)
Current rating ID(A)
1
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
6
1
1ms
DC
10ms
4
0.1
2
TJ(Max)=150°C
TC=25°C
0
0.01
0
25
50
75
100
125
150
1
10
100
1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOK9N90 (Note F)
TCASE (°C)
Figure 9: Current De-rating (Note B)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.34°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOK9N90 (Note F)
Rev.1.0 June 2013
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Page 4 of 5
AOK9N90
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.1.0 June 2013
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 5 of 5