Datasheet

AOTF450L
200V, 5.8A N-Channel MOSFET
General Description
Product Summary
The AOTF450L is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this part can be
adopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
[email protected]
ID (at VGS=10V)
5.8A
RDS(ON) (at VGS=10V)
< 0.7Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOTF450L
Top View
D
TO-220F
G
G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current
C
Repetitive avalanche energy
C
Single pulsed avalanche energy G
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Units
V
±30
V
5.8*
ID
4.1*
A
IDM
12
IAR
1.9
A
EAR
54
mJ
EAS
dv/dt
108
5
27
mJ
V/ns
W
0.18
-55 to 175
W/ oC
°C
300
°C
Max
65
5.6
Units
°C/W
°C/W
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
TL
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RθJA
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev0: Jun 2011
Max
200
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Page 1 of 5
AOTF450L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
200
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
ID=250µA, VGS=0V, TJ=150°C
250
V
ID=250µA, VGS=0V
0.25
V/ oC
VDS=200V, VGS=0V
1
VDS=160V, TJ=125°C
10
µA
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
5.8
A
ISM
Maximum Body-Diode Pulsed Current
12
A
4.5
nΑ
V
VGS=10V, ID=2.9A
0.57
0.7
Ω
VDS=40V, ID=2.9A
3.4
IS=1A,VGS=0V
0.78
1
V
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
±100
4.2
VGS=0V, VDS=25V, f=1MHz
3.6
S
150
194
235
pF
25
40
55
pF
3.3
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
pF
1.8
3.6
5.4
Ω
2.8
3.6
4.4
nC
VGS=10V, VDS=160V, ID=5.8A
Qgs
Gate Source Charge
1.7
nC
Qgd
tD(on)
Gate Drain Charge
0.6
nC
Turn-On DelayTime
11
tr
Turn-On Rise Time
ns
20
tD(off)
Turn-Off DelayTime
ns
13
tf
trr
Turn-Off Fall Time
ns
8
Body Diode Reverse Recovery Time
IF=5.8A,dI/dt=100A/µs,VDS=100V
95
ns
121
150
Qrr
Body Diode Reverse Recovery Charge IF=5.8A,dI/dt=100A/µs,VDS=100V
0.40
0.51
0.62
VGS=10V, VDS=100V, ID=5.8A,
RG=25Ω
ns
µC
A. The value of R θJA is measured with the device in a still air environment with TA =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C, Ratings are based on low frequency and duty cycles to keep initial
TJ=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=1.9A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Jun 2011
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Page 2 of 5
AOTF450L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
12
VDS=40V
10
10V
-55°C
10
ID(A)
ID (A)
8
6
6.5V
125°C
4
1
6V
25°C
2
VGS=5.5V
0
0.1
0
5
10
15
20
25
VDS (Volts)
Fig 1: On-Region Characteristics
30
2
1.0
6
8
VGS(Volts)
Figure 2: Transfer Characteristics
10
Normalized On-Resistance
4
VGS=10V
0.8
RDS(ON) (Ω )
4
0.6
0.4
0.2
3.5
VGS=10V
ID=2.9A
3
2.5
2
1.5
1
0.5
0.0
0
0
2
4
6
8
-100
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.0E+02
1.0E+01
1.1
40
1.0E+00
IS (A)
BVDSS (Normalized)
-50
1
125°C
1.0E-01
1.0E-02
25°C
0.9
1.0E-03
1.0E-04
0.8
-100
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
Rev0: Jun 2011
-50
0
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AOTF450L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
15
Capacitance (pF)
VGS (Volts)
Ciss
VDS=160V
ID=5.8A
12
100
9
6
Coss
Crss
10
3
1
0
1
2
3
4
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
6
8
100
6
10
ID (Amps)
Current rating ID(A)
0
4
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
10µs
RDS(ON)
limited
100µs
1ms
1
10ms
DC
0.1s
0.1
2
1s
TJ(Max)=175°C
TC=25°C
0
0.01
0
25
50
75
100
125
150
TCASE (°C)
Figure 9: Current De-rating (Note B)
175
1
10
100
1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe Operating
Area for AOTF450L (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=5.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
Single Pulse
0.001
0.000001
Rev0: Jun 2011
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF450L (Note F)
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100
Page 4 of 5
AOTF450L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+
DUT
Vdd
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev0: Jun 2011
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 5 of 5