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Analog Power
AMB430N
N-Channel 30-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
VDS (V)
30
Typical Applications:
• Power Routing
• Li Ion Battery Packs
• Level Shifting and Driver Circuits
PRODUCT SUMMARY
rDS(on) (mΩ)
24 @ VGS = 10V
37 @ VGS = 4.5V
DFN1.6x1.6-6L
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
VDS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
TA=25°C
7.7
ID
Continuous Drain Current a
TA=70°C
4.5
b
IDM
Pulsed Drain Current
30
a
I
2.7
Continuous Source Current (Diode Conduction)
S
T
=25°C
2.1
A
PD
Power Dissipation a
TA=70°C
0.7
TJ, Tstg -55 to 150
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient a
ID (A)
7.7
6.2
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
70
RθJA
110
Units
V
A
A
W
°C
Units
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AMB430N_1A
Analog Power
AMB430N
Electrical Characteristics
Parameter
Symbol
Gate-Source Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-Resistance a
rDS(on)
Forward Transconductance a
Diode Forward Voltage a
gfs
VSD
Test Conditions
Static
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55°C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 6.7 A
VGS = 4.5 V, ID = 5.4 A
VDS = 15 V, ID = 6.7 A
IS = 1.35 A, VGS = 0 V
Min
Typ
Max
1
±100
1
25
12
Unit
V
nA
uA
A
24
37
7
0.75
mΩ
S
V
Dynamic b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS = 15 V, VGS = 4.5 V,
ID = 6.7 A
VDS = 15 V, RL = 2.3 Ω,
ID = 6.7 A,
VGEN = 10 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f = 1 Mhz
4.2
1.1
1.9
4
6
18
5
279
56
44
nC
ns
pF
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out
of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary
in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL
products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation
where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application,
Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated
with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part.
APL is an Equal Opportunity/Affirmative Action Employer.
© Preliminary
2
Publication Order Number:
DS_AMB430N_1A
Analog Power
AMB430N
Typical Electrical Characteristics
0.06
10
8
0.04
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
TJ = 25°C
3.5V
4V
0.02
4.5V,6V,8V,10V
6
4
2
0
0
0
2
4
6
8
0
10
ID-Drain Current (A)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
1. On-Resistance vs. Drain Current
2. Transfer Characteristics
0.1
100
TJ = 25°C
ID = 6.7A
TJ = 25°C
0.08
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
1
0.06
0.04
0.02
0
10
1
0.1
0.01
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1
1.2
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
10
400
F = 1MHz
350
10V,8V,6V,4.5V
Ciss
300
Capacitance (pf)
ID - Drain Current (A)
8
4V
6
3.5V
4
250
200
150
Coss
100
2
Crss
50
0
0
0
0.1
0.2
0.3
0.4
0
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
5
6. Capacitance
3
Publication Order Number:
DS_AMB430N_1A
Analog Power
AMB430N
Typical Electrical Characteristics
2
VDS = 15V
ID = 6.7A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
10
8
6
4
2
0
1.5
1
0.5
0
2
4
6
8
10
-50
-25
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
100
PEAK TRANSIENT POWER (W)
30
10 uS
100 uS
10
1 mS
ID Current (A)
0
10 mS
100 mS
1
1 SEC
10 SEC
100 SEC
0.1
1
DC
Idm limit
25
20
15
10
5
Limited by
RDS
0.01
0.1
1
10
100
0
0.001
1000
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.1
0.2
RθJA(t) = r(t) + RθJA
0.1
RθJA = 175 °C /W
0.05
0.02
P(pk)
t1
t2
Single Pulse
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
4
Publication Order Number:
DS_AMB430N_1A
Analog Power
AMB430N
Package Information
© Preliminary
5
Publication Order Number:
DS_AMB430N_1A