UNISONIC TECHNOLOGIES CO., LTD 6N70-C Preliminary Power MOSFET 6.0A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N70-C is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed, low gate charge and low input capacitance. The UTC 6N70-C is universally applied in high efficiency switch mode power supply. FEATURES * RDS(ON)<1.8Ω @ VGS=10V, ID=3A * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N70L-TF3-T 6N70G-TF3-T 6N70L-TF2-T 6N70G-TF2-T 6N70L-TM3-T 6N70G-TM3-T 6N70L-TMS-T 6N70G-TMS-T 6N70L-TMS2-T 6N70G-TMS2-T 6N70L-TMS4-T 6N70G-TMS4-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F TO-220F2 TO-251 TO-251S TO-251S2 TO-251S4 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A52.c 6N70-C Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage (Note 2) Drain Current Continuous SYMBOL VDSS VGSS TC=25°C TC=100°C Pulsed Avalanche Current (Note 2) ID IDM IAR EAS EAR dv/dt RATINGS 700 ±30 6 3.8 24 6 108 13 2.5 40 42 UNIT V V A A A A mJ mJ V/ns RATINGS 62.5 UNIT °С/W 110 °С/W 3.1 2.9 °С/W °С/W 2.27 °С/W Single Pulsed (Note 3) Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) TO-220F TO-220F2 Power Dissipation PD W TO-251/TO-251S 55 TO-251S2/TO-251S4 TO-220F 0.32 TO-220F2 0.33 Linear Derarting Factor PD W/°C TO-251/TO-251S 0.44 TO-251S2/TO-251S4 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 6mH, IAS = 6A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C 4. ISD ≤ 6A, di/dt ≤140A/µs, VDD ≤ BVDSS, Starting TJ = 25°C Avalanche Energy THERMAL DATA PARAMETER TO-220F/TO-220F2 Junction to Ambient TO-251/TO-251S TO-251S2/TO-251S4 TO-220F TO-220F2 Junction to Case TO-251/TO-251S TO-251S2/TO-251S4 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC 2 of 6 QW-R502-A52.c 6N70-C Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse SYMBOL TEST CONDITIONS BVDSS ID=250µA, VGS=0V ∆BVDSS/∆TJ ID=250µA VDS=700V IDSS VDS=560V, TC=125°C VGS=+30V, VDS=0V IGSS VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA, VDS=5V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3A (Note 1) DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, Output Capacitance COSS f=1.0MHz (Note 1, 2) Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=1A, RG=25Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF Total Gate Charge QG VGS=10V, VDS=50V, Gate to Source Charge QGS ID=1.3A (Note 1, 2) Gate to Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Integral reverse pn-diode in Maximum Body-Diode Pulsed Current the MOSFET ISM (Note 3) Drain-Source Diode Forward Voltage VSD IS=6A, VGS=0V, TJ = 25°C (Note 2) Notes: 1. Pulse Test: Pulse width ≤ 250µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 700 0.79 2.0 V V/°C 25 µA 250 µA +100 nA -100 nA 1.5 4.0 1.8 V Ω 700 79 6 1000 120 13 pF pF pF 55 50 180 50 25 6.5 4.8 75 70 210 70 40 ns ns ns ns nC nC nC 6 A 24 A 1.4 V 3 of 6 QW-R502-A52.b 6N70-C Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Same Type as DUT 12V 200nF 50kΩ VDS 300nF VGS DUT 3mA Gate Charge Test Circuit Gate Charge Waveforms VDS RG 90% RD VDS VGS 10V 10% DUT VGS td(ON) tR td(OFF) tF tON Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG tOFF BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 6 QW-R502-A52.b 6N70-C Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-A52.b 6N70-C Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-A52.b