Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D187
PMST2222; PMST2222A
NPN switching transistors
Product data sheet
Supersedes data of 1997 Jul 14
1999 Apr 22
NXP Semiconductors
Product data sheet
PMST2222;
PMST2222A
NPN switching transistors
FEATURES
PINNING
• High current (max. 600 mA)
PIN
• Low voltage (max. 40 V).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• High-speed switching and linear amplification.
DESCRIPTION
NPN switching transistor in a SOT323 plastic package.
PNP complement: PMST2907A.
3
handbook, halfpage
3
MARKING
1
MARKING CODE(1)
TYPE NUMBER
PMST2222
∗1B
PMST2222A
∗1P
2
1
2
Top view
MAM062
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
PMST2222
−
60
V
PMST2222A
−
75
V
PMST2222
−
30
V
PMST2222A
−
40
V
PMST2222
−
5
V
PMST2222A
−
6
V
collector-emitter voltage
emitter-base voltage
open base
open collector
IC
collector current (DC)
−
600
mA
ICM
peak collector current
−
800
mA
IBM
peak base current
−
200
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 22
2
NXP Semiconductors
Product data sheet
NPN switching transistors
PMST2222; PMST2222A
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
625
K/W
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
PMST2222
collector cut-off current
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = 50 V
−
10
nA
IE = 0; VCB = 50 V; Tj = 125 °C
−
10
µA
IE = 0; VCB = 60 V
−
10
nA
IE = 0; VCB = 60 V; Tj = 125 °C
−
10
µA
IEBO
collector cut-off current
IC = 0; VEB = 3 V
−
10
nA
hFE
DC current gain
IC = 0.1 mA; VCE = 10 V
35
−
IC = 1 mA; VCE = 10 V
50
−
IC = 10 mA; VCE = 10 V
75
−
IC = 10 mA; VCE = 10 V; Tamb = −55 °C 35
−
IC = 150 mA; VCE = 1 V; note 1
50
−
IC = 150 mA; VCE = 10 V; note 1
100
300
30
−
PMST2222A
DC current gain
IC = 500 mA; VCE = 10 V; note 1
PMST2222
40
−
IC = 150 mA; IB = 15 mA; note 1
−
400
mV
IC = 500 mA; IB = 50 mA; note 1
−
1.6
V
IC = 150 mA; IB = 15 mA; note 1
−
300
mV
IC = 500 mA; IB = 50 mA; note 1
−
1
V
IC = 150 mA; IB = 15 mA; note 1
−
1.3
V
IC = 500 mA; IB = 50 mA; note 1
−
2.6
V
IC = 150 mA; IB = 15 mA; note 1
0.6
1.2
V
IC = 500 mA; IB = 50 mA; note 1
−
2
V
−
8
pF
−
30
pF
−
25
pF
PMST2222
250
−
MHz
PMST2222A
300
−
MHz
PMST2222A
VCEsat
collector-emitter saturation voltage
PMST2222
collector-emitter saturation voltage
PMST2222A
VBEsat
base-emitter saturation voltage
PMST2222
base-emitter saturation voltage
PMST2222A
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
PMST2222
PMST2222A
fT
1999 Apr 22
transition frequency
IC = 20 mA; VCE = 20 V; f = 100 MHz
3
NXP Semiconductors
Product data sheet
NPN switching transistors
SYMBOL
F
PMST2222; PMST2222A
PARAMETER
CONDITIONS
MIN.
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
noise figure
MAX.
UNIT
−
4
dB
−
35
ns
−
15
ns
Switching times (between 10% and 90% levels); (see Fig.2)
ton
turn-on time
ICon = 150 mA; IBon = 15 mA;
IBoff = −15 mA
td
delay time
tr
rise time
−
20
ns
toff
turn-off time
−
250
ns
ts
storage time
−
200
ns
tf
fall time
−
60
ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
VBB
handbook, full pagewidth
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MLB826
Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = −3.5 V; VCC = 29.5 V.
Oscilloscope input impedance Zi = 50 Ω.
Fig.2 Test circuit for switching times.
1999 Apr 22
4
oscilloscope
NXP Semiconductors
Product data sheet
NPN switching transistors
PMST2222; PMST2222A
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
1999 Apr 22
REFERENCES
IEC
JEDEC
EIAJ
SC-70
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
PMST2222;
PMST2222A
NPN switching transistors
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 Apr 22
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/02/pp7
Date of release: 1999 Apr 22
Document order number: 9397 750 05756