Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D883
BOTTOM VIEW
2PA1774M series
PNP general purpose transistor
Product data sheet
2004 Feb 19
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PA1774M series
FEATURES
QUICK REFERENCE DATA
• Leadless ultra small plastic package
(1 mm × 0.6 mm × 0.5 mm)
SYMBOL
• Board space 1.3 mm × 0.9 mm
• Power dissipation comparable to SOT23.
APPLICATIONS
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
−40
V
IC
collector current (DC)
−100
mA
ICM
peak collector current
−200
mA
PINNING
• General purpose small signal DC
PIN
• Low and medium frequency AC applications
• Mobile communications, digital (still) cameras, PDAs,
PCMCIA cards.
DESCRIPTION
1
base
2
emitter
3
collector
DESCRIPTION
PNP general purpose transistor in a SOT883 leadless ultra
small plastic package.
NPN complement: 2PC4617M series.
3
handbook, halfpage
2
1
3
MARKING
1
2
TYPE NUMBER
Bottom view
MARKING CODE
2PA1774QM
MAM469
PB
2PA1774RM
PA
2PA1774SM
PC
Fig.1 Simplified outline (SOT883) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
2PA1774QM
−
2PA1774RM
−
2PA1774SM
−
2004 Feb 19
DESCRIPTION
VERSION
leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
SOT883
2
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PA1774M series
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−40
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−100
mA
Ptot
total power dissipation
note 1
−
250
mW
note 2
−
430
mW
Tamb ≤ 25 °C
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
VALUE
UNIT
note 1
500
K/W
note 2
290
K/W
in free air
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.
2004 Feb 19
3
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PA1774M series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCB = −30 V; IE = 0
−
−100
nA
VCB = −30 V; IE = 0; Tj = 150 °C
−
−5
μA
−
−100
nA
2PA1774QM
120
270
2PA1774RM
180
390
collector-base cut-off current
IEBO
emitter-base cut-off current
VEB = −4 V; IC = 0
hFE
DC current gain
VCE = −6 V; IC = −1 mA
270
560
VCEsat
collector-emitter saturation voltage
2PA1774SM
IC = −50 mA; IB = −5 mA; note 1
−
−200
mV
Cc
collector capacitance
IE = ie = 0; VCB = −12 V; f = 1 MHz
−
2.2
pF
fT
transition frequency
VCE = −12 V; IC = −2 mA;
f = 100 MHz
100
−
MHz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
MDB663
103
handbook, halfpage
VBE
(mV)
−1000
(1)
hFE
MDB664
−1200
handbook, halfpage
(2)
(1)
−800
(3)
102
(2)
−600
(3)
−400
10
−10−1
−1
−10
−200
−10−1
−102
−103
IC (mA)
−10
−102
−103
IC (mA)
VCE = −6 V.
(1) Tamb = −55 °C.
VCE = −6 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
(3) Tamb = −55 °C.
Fig.3
Fig.2 DC current gain; typical values.
2004 Feb 19
−1
4
Base-emitter voltage as a function of
collector current; typical values.
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PA1774M series
MDB665
−103
handbook, halfpage
MDB666
−1200
handbook, halfpage
VBEsat
(mV)
−1000
VCEsat
(mV)
(1)
−800
(2)
−102
−600
(1)
(3)
(2)
−400
(3)
−10
−10−1
−1
−10
−200
−10−1
−102
−103
IC (mA)
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
MDB667
−0.2
handbook, halfpage
(1)
IC
(2)
(A)
(3)
−0.16 (4)
(5)
−1
−10
2
IC (mA) −10
Base-emitter saturation voltage as a
function of collector current; typical values.
MDB668
103
RCEsat
(Ω)
(6)
102
(7)
−0.12
(8)
(9)
−0.08
(1)
10
(2)
(10)
−0.04
(3)
0
−2
0
(1)
(2)
(3)
(4)
IB = −2.7 mA.
IB = −2.43 mA.
IB = −2.16 mA.
IB = −1.89 mA.
−4
−6
1
−10−1
−8
−10
VCE (V)
(5) IB = −1.62 mA.
(9) IB = −0.54 mA.
(6) IB = −1.35 mA.
(7) IB = −1.08 mA.
(8) IB = −0.81 mA.
(10) IB = −0.27 mA.
IC/IB = 10.
−102
−103
IC (mA)
(3) Tamb = −55 °C.
Collector current as a function of
collector-emitter voltage; typical values.
2004 Feb 19
−10
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
Fig.7
Fig.6
−1
5
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PA1774M series
PACKAGE OUTLINE
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
L
SOT883
L1
2
b
3
e
b1
1
e1
A
A1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
b1
D
E
e
e1
L
L1
mm
0.50
0.46
0.03
0.20
0.12
0.55
0.47
0.62
0.55
1.02
0.95
0.35
0.65
0.30
0.22
0.30
0.22
Note
1. Including plating thickness
OUTLINE
VERSION
SOT883
2004 Feb 19
REFERENCES
IEC
JEDEC
JEITA
SC-101
6
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PA1774M series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
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does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Feb 19
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
R75/01/pp8
Date of release: 2004 Feb 19
Document order number: 9397 750 11698
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