Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D102
PMSTA92
PNP high-voltage transistor
Product data sheet
Supersedes data of 1999 Jun 01
2001 Feb 20
NXP Semiconductors
Product data sheet
PNP high-voltage transistor
PMSTA92
FEATURES
PINNING
• S-mini package
PIN
• High voltage.
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• Primarily intended for use in telephony and professional
communication equipment.
3
handbook, halfpage
3
DESCRIPTION
PNP transistor in a microminiature (SMD) plastic package
intended for surface mounted applications.
1
2
MARKING
TYPE NUMBER
1
MARKING CODE
PMSTA92
2
Top view
tD2
Fig.1
MAM048
Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−300
V
VCEO
collector-emitter voltage
open base
−
−300
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−100
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air; note 1
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
2001 Feb 20
2
VALUE
UNIT
625
K/W
NXP Semiconductors
Product data sheet
PNP high-voltage transistor
PMSTA92
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
VCB = −200 V; IE = 0
−
−
−100
nA
IEBO
emitter cut-off current
VBE = −3 V; IC = 0
−
−
−100
nA
hFE
DC current gain
IC = −1 mA; VCE = −10 V
40
−
−
IC = −10 mA; VCE = −10 V
40
−
−
IC = −30 mA; VCE = −10 V
30
−
−
VCEsat
saturation voltage
IC = −20 mA; IB = −2 mA; note 1
−
−
−250
mV
VBEsat
saturation voltage
IC = −20 mA; IB = −2 mA; note 1
−
−
−900
mV
Cc
collector-base capacitance
VCB = −20 V; IE = ie = 0; f = 1 MHz
−
1.9
3.5
pF
Ce
emitter-base capacitance
VEB = −5 V; IC = ic = 0; f = 1 MHz
−
20
−
pF
fT
transition frequency
VCE = −20 V; IC = −10 mA;
f = 100 MHz
50
−
−
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2001 Feb 20
3
NXP Semiconductors
Product data sheet
PNP high-voltage transistor
PMSTA92
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2001 Feb 20
REFERENCES
IEC
JEDEC
EIAJ
SC-70
4
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
PNP high-voltage transistor
PMSTA92
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Feb 20
5
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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© NXP B.V. 2009
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/03/pp6
Date of release: 2001 Feb 20
Document order number: 9397 750 07875