Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
PXT4403
PNP switching transistor
Product data sheet
Supersedes data of 1999 Apr 14
2004 Nov 22
NXP Semiconductors
Product data sheet
PNP switching transistor
PXT4403
FEATURES
PINNING
• High current (max. 600 mA)
PIN
• Low voltage (max. 40 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
collector
3
base
• Switching and linear amplification.
DESCRIPTION
2
PNP switching transistor in a SOT89 plastic package.
NPN complement: PXT4401.
3
MARKING
3
2
1
1
sym079
MARKING CODE(1)
TYPE NUMBER
PXT4403
*2T
Fig.1 Simplified outline (SOT89) and symbol.
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PXT4403
2004 Nov 22
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
2
VERSION
SOT89
NXP Semiconductors
Product data sheet
PNP switching transistor
PXT4403
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−40
V
VCEO
collector-emitter voltage
open base
−
−40
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−600
mA
ICM
peak collector current
−
−800
mA
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
note 1
−
0.5
W
note 2
−
0.8
W
note 3
Tamb ≤ 25 °C
−
1.1
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−65
+150
°C
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
006aaa238
1600
Ptot
(mW)
1200
800
(1)
(2)
(3)
400
0
−75
−25
25
75
125
175
Tamb (°C)
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) FR4 PCB; standard footprint.
Fig.2 Power derating curves.
2004 Nov 22
3
NXP Semiconductors
Product data sheet
PNP switching transistor
PXT4403
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
CONDITIONS
thermal resistance from junction to
ambient
Rth(j-s)
VALUE
UNIT
note 1
250
K/W
note 2
156
K/W
note 3
113
K/W
30
K/W
in free air
thermal resistance from junction to
soldering point
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
006aaa235
103
Zth
(K/W)
102
(1)
(3)
(2)
(4)
(5)
(6)
(7)
10
(8)
(9)
(10)
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; standard footprint.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 22
4
NXP Semiconductors
Product data sheet
PNP switching transistor
PXT4403
006aaa236
103
Zth
(K/W)
(1)
102
(2)
(3)
(4)
(5)
(6)
10
(7)
(8)
(9)
(10)
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
006aaa237
103
Zth
(K/W)
102
(1)
(3)
(2)
(4)
(5)
(6)
10
(7)
(8)
(9)
(10)
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 22
5
NXP Semiconductors
Product data sheet
PNP switching transistor
PXT4403
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
IE = 0 A; VCB = −40 V
−
−50
nA
IEBO
emitter-base cut-off current
IC = 0 A; VEB = −5 V
−
−50
nA
hFE
DC current gain
IC = −0.1 mA; VCE = −1 V
30
−
IC = −1 mA; VCE = −1 V
60
−
IC = −10 mA; VCE = −1 V
100
−
IC = −150 mA; VCE = −2 V
100
300
VCEsat
VBEsat
IC = −500 mA; VCE = −2 V
20
−
collector-emitter saturation
voltage
IC = −150 mA; IB = −15 mA
−
−400
mV
IC = −500 mA; IB = −50 mA
−
−750
mV
base-emitter saturation voltage
IC = −150 mA; IB = −15 mA
−
−950
mV
IC = −500 mA; IB = −50 mA
−
−1.3
V
Cc
collector capacitance
IE = ie = 0 A; VCB = −10 V; f = 1 MHz
−
8.5
pF
Ce
emitter capacitance
IC = ic = 0 A; VEB = −500 mV; f = 1 MHz
−
35
pF
fT
transition frequency
IC = −20 mA; VCE = −10 V; f = 100 MHz
200
−
MHz
−
40
ns
−
15
ns
Switching times (between 10% and 90% levels); (see Fig.7)
ICon = −150 mA; IBon = −15 mA;
IBoff = 15 mA
ton
turn-on time
td
delay time
tr
rise time
−
30
ns
toff
turn-off time
−
350
ns
ts
storage time
−
300
ns
tf
fall time
−
50
ns
2004 Nov 22
6
NXP Semiconductors
Product data sheet
PNP switching transistor
PXT4403
MGD812
300
ndbook, full pagewidth
hFE
VCE = −1 V
200
100
0
−10−1
−1
−10
−102
Fig.6 DC current gain; typical values.
VBB
handbook, full pagewidth
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MGD624
Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = 3.5 V; VCC = −29.5 V.
Oscilloscope input impedance Zi = 50 Ω.
Fig.7 Test circuit for switching times.
2004 Nov 22
7
oscilloscope
IC mA
−103
NXP Semiconductors
Product data sheet
PNP switching transistor
PXT4403
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
2004 Nov 22
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
8
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
NXP Semiconductors
Product data sheet
PNP switching transistor
PXT4403
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
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any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Nov 22
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/04/pp10
Date of release: 2004 Nov 22
Document order number: 9397 750 13899