Datasheet

SSF2301B
D
DESCRIPTION
The SSF2301B uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a load switch or in PWM applications.
G
S
GENERAL FEATURES
Schematic diagram
● VDS = -20V,ID = -2.8A
RDS(ON) < 150mΩ @ VGS=-2.5V
RDS(ON) < 100mΩ @ VGS=-4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOT23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
2301B
SSF2301B
SOT23
Ø180mm
8 mm
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Limit
Unit
-20
V
VGS
±8
V
ID
-2.8
A
IDM
-10
A
PD
1.25
W
TJ,TSTG
-55 To 150
℃
RθJA
100
℃/W
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS
VDS=-20V,VGS=0V
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±8V,VDS=0V
±100
nA
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SSF2301B
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
Drain-Source On-State Resistance
RDS(ON)
Forward Transconductance
VDS=VGS,ID=-250μA
gFS
-0.45
-1
V
VGS=-4.5V, ID=-2.8A
80
100
VGS=-2.5V, ID=-2A
110
150
VDS=-5V,ID=-2.8A
9
S
1160
PF
210
PF
PF
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=-10V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
125
Turn-on Delay Time
td(on)
13.6
27.2
nS
Turn-on Rise Time
tr
8.6
17.2
nS
73.6
147.2
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDD=-10V,ID=-2.8A
VGS=-4.5V,RGEN=3Ω
td(off)
Turn-Off Fall Time
tf
34.6
69.2
nS
Total Gate Charge
Qg
9.6
12.7
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-10V,ID=-2.8A,VGS=-4.5V
1.1
nC
2.6
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
VGS=0V,IS=-0.75A
-1.2
V
-2.8
A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSF2301B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Vgs
Rgen
td(on)
Rl
Vin
D
ton
tr
toff
tf
td(off)
Vout
90%
VOUT
G
90%
INVERTED
10%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
R(t),Normalized Effective
Transient Thermal Impedance
Figure1:Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
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SSF2301B
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in Millimeters
MIN.
MAX.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
2.000
0.550REF
0.300
0.500
0°
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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SSF2301B
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
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