Datasheet

SSF4004S
Main Product Characteristics
VDSS
40V
RDS(on)
2.3mΩ (typ.)
ID
180A ①
TO-220
Schematic Diagram
Assignment
Features and Benefits


Marking and Pin
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature



Description
SSF4004S utilizes the latest processing techniques to achieve high cell density and reduces on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V(Silicon Limited)
180 ①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
120 ①
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V(Package Limited)
75
IDM
Pulsed Drain Current ②
710
Power Dissipation ③
200
W
Linear Derating Factor
1.3
W/°C
VDS
Drain-Source Voltage
40
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
960
mJ
IAS
Avalanche Current @ L=0.3mH
80
A
-55 to +175
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
©Silikron Semiconductor CO.,LTD.
2010.06.20
www.silikron.com
Version : 1.1
Units
A
page 1 of 8
SSF4004S
Thermal Resistance
Symbol
Characteristics
Typ.
Max.
Units
RθJC
Junction-to-case ③
—
0.75
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Min.
Typ.
Max.
Units
40
—
—
V
—
2.3
4
—
4.1
—
2
—
4
—
2.1
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
278
—
Qgs
Gate-to-Source charge
—
41
—
Qgd
Gate-to-Drain("Miller") charge
—
119
—
td(on)
Turn-on delay time
—
71
—
tr
Rise time
—
34
—
td(off)
Turn-Off delay time
—
131
—
tf
Fall time
—
106
—
Ciss
Input capacitance
—
12968
—
Coss
Output capacitance
—
940
—
Crss
Reverse transfer capacitance
—
905
—
mΩ
V
μA
nA
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 75A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS = 40V,VGS = 0V
TJ = 125°C
VGS = 20V
VGS = -20V
ID = 75A,
nC
VDS=32V,
VGS = 10V
ns
VGS=10V, VDS =20V,
RGEN=3Ω,ID =1.3A
VGS = 0V
pF
VDS = 40V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
75 ①
A
—
—
750
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
IS=30A, VGS=0V
trr
Reverse Recovery Time
—
28
—
nS
TJ = 25°C, IF =70A,
Qrr
Reverse Recovery Charge
—
20
—
nC
di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2010.06.20
www.silikron.com
Version : 1.1
page 2 of 8
SSF4004S
Test circuits and Waveforms
EAS Test Circuit
Gate charge test circuit
Switching Time Test Circuit
Switching Waveforms
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2010.06.20
www.silikron.com
Version : 1.1
page 3 of 8
SSF4004S
Typical electrical and thermal characteristics
Figure 2. Gate to source cut-off voltage
Figure 1.Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
©Silikron Semiconductor CO.,LTD.
Figure 4.Normalized On-Resistance Vs. Case
Temperature
2010.06.20
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Version : 1.1
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SSF4004S
Typical electrical and thermal characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6. Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2010.06.20
www.silikron.com
Version : 1.1
page 5 of 8
SSF4004S
Mechanical Data:
TO220 PACKAGE OUTLINE DIMENSION_GN
Symbol
A
A1
A2
b
b1
b2
C
D
D1
D2
E
E1
ФP
ФP1
e
e1
L
L1
L2
L3
L4
Q1
Dimension In Millimeters
Min
Nom
Max
4.400
4.550
4.700
1.270
1.300
1.330
2.240
2.340
2.440
1.270
1.270
1.370
1.470
0.750
0.800
0.850
0.480
0.500
0.520
15.100
15.400
15.700
8.800
8.900
9.000
2.730
2.800
2.870
9.900
10.000
10.100
8.700
3.570
3.600
3.630
1.400
1.500
1.600
2.54BSC
5.08BSC
13.150
13.360
13.570
7.35REF
Dimension In Inches
Nom
Max
0.179
0.185
0.051
0.052
0.092
0.096
0.050
0.054
0.058
0.031
0.033
0.020
0.021
0.606
0.618
0.350
0.354
0.110
0.113
0.394
0.398
0.343
0.142
0.143
0.059
0.063
0.1BSC
0.2BSC
0.518
0.526
0.534
0.29REF
Min
0.173
0.050
0.088
0.050
0.030
0.019
0.594
0.346
0.107
0.390
0.141
0.055
2.900
1.650
3.000
1.750
3.100
1.850
0.114
0.065
0.118
0.069
0.122
0.073
0.900
1.000
1.100
0.035
0.039
0.043
0
5
0
7
0
9
5
0
0
90
7
Q2
Q3
0
5
50
0
7
70
0
9
90
0
5
50
0
7
70
9
90
Q4
10
30
50
10
30
50
©Silikron Semiconductor CO.,LTD.
2010.06.20
www.silikron.com
Version : 1.1
0
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SSF4004S
Ordering and Marking Information
Device Marking: SSF4004
Package (Available)
TO-220
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO-220
50
20
1000
6000
6
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=150℃ @ 80% of
Max VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2010.06.20
www.silikron.com
Version : 1.1
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SSF4004S
ATTENTION:
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
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[email protected]
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©Silikron Semiconductor CO.,LTD.
2010.06.20
www.silikron.com
Version : 1.1
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