Datasheet

SSF3428
DESCRIPTION
The SSF3428 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
Schematic diagram
GENERAL FEATURES
● VDS = 30V,ID =6A
RDS(ON) < 51mΩ @ VGS=4.5V
RDS(ON) < 34mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
TSOP-6 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
SSF3428
SSF3428
TSOP-6
-
-
-
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
ID(25℃)
6
A
ID(70℃)
4.8
A
IDM
30
A
PD
2
W
TJ,TSTG
-55 To 150
℃
RθJA
62.5
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
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V
1
μA
v1.0
SSF3428
IGSS
VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
Gate-Body Leakage Current
±100
nA
3
V
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
1
VGS=4.5V, ID=4.9A
40
51
mΩ
VGS=10V, ID=6A
28
34
mΩ
VDS=10V,ID=6A
12
S
250
PF
50
PF
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=15V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
30
PF
Turn-on Delay Time
td(on)
10
nS
Turn-on Rise Time
tr
15
nS
25
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
td(off)
VDS=15V,VGS=10V,RGEN=6Ω
ID=1A
Turn-Off Fall Time
tf
10
nS
Total Gate Charge
Qg
9
nC
Gate-Source Charge
Qgs
1.8
nC
Gate-Drain Charge
Qgd
1.5
nC
Body Diode Reverse Recovery Time
Trr
20
nS
Body Diode Reverse Recovery Charge
Qrr
12
nC
VDS=15V,ID=6A,VGS=10V
IF=1.7A, dI/dt=100A/µs
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.7A
0.8
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSF3428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Rgen
D
90%
VOUT
Vout
toff
tf
td(off)
Rl
Vin
Vgs
ton
tr
td(on)
90%
INVERTED
10%
10%
G
90%
VIN
S
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
PD Power(W)
ID- Drain Current (A)
Figure 2:Switching Waveforms
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
ID- Drain Current (A)
Rdson On-Resistance(mΩ)
Figure 4 Drain Current
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
©Silikron Semiconductor CO.,LTD.
Figure 6 Drain-Source On-Resistance
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ID- Drain Current (A)
Normalized On-Resistance
SSF3428
TJ-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
©Silikron Semiconductor CO.,LTD.
Figure 12 Source- Drain Diode Forward
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ID- Drain Current (A)
SSF3428
Vds Drain-Source Voltage (V)
Safe Operation Area
ZthJA Normalized Transient
Thermal Resistance
Figure 13
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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v1.0
SSF3428
TSOP-6 PACKAGE INFORMATION
Millimeters
SYMBOL
A
MIN
MAX
0.90
1.10
A1
0.10
b
0.30
0.50
c
0.08
0.20
D
2.70
3.10
E
2.60
3.00
E1
1.40
1.80
e
L
0.95 BSC
0.35
0.55
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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SSF3428
ATTENTION:
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