Datasheet - International Rectifier

PD-96021A
IRF7755PbF
HEXFET® Power MOSFET
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Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Lead-Free
VDSS
RDS(on) max
ID
-20V
[email protected] = -4.5V
[email protected] = -2.5V
-3.7A
-2.8A
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
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TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-20
-3.9
-3.1
-15
1
0.64
0.01
±20
-55 to +150
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
Max.
Units
125
°C/W
1
05/14/09
IRF7755PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
–––
–––
–––
-0.45
7.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.011
35.3
44.3
–––
–––
–––
–––
–––
–––
11
2.1
3.5
9
13
89
61
1090
182
124
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
51
VGS = -4.5V, ID = -3.7A ‚
mΩ
86
VGS = -2.5V, ID = -2.8A ‚
-1.2
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -3.7A
-15
VDS = -16V, VGS = 0V
µA
-25
VDS = -16V, VGS = 0V, TJ = 70°C
-100
VGS = -12V
nA
100
VGS = 12V
17
ID = -3.7A
–––
nC
VDS = -16V
–––
VGS = -4.5V
14
VDD = -10V, VGS = -4.5V
20
ID = -1.0A
ns
133
RG = 6.0Ω
92
RD = 10Ω ‚
–––
VGS = 0V
–––
pF
VDS = -15V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-1.0
–––
–––
-15
–––
–––
–––
–––
55
29
-1.2
82
43
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.0A, VGS = 0V ‚
TJ = 25°C, IF = -1.0A
di/dt = -100A/µs ‚
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ When mounted on 1 inch square copper board, t < 10sec.
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF7755PbF
VGS
TOP
-7.5V
-4.5V
-3.5V
-3.0V
-2.5V
-2.0V
-1.75V
BOTTOM -1.5V
10
1
-1.5V
10
10
-1.5V
1
0.1
0.1
1
VGS
-7.5V
-4.5V
-3.5V
-3.0V
-2.5V
-2.0V
-1.75V
BOTTOM -1.5V
TOP
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
100
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
100
0.1
100
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
10
TJ = 150° C
TJ = 25 ° C
V DS= -15V
20µs PULSE WIDTH
0.1
1.0
1.5
2.0
2.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
1
1
-VDS, Drain-to-Source Voltage (V)
3.0
2.0
ID = -3.9A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7755PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1200
Ciss
800
400
Coss
Crss
0
1
10
10
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
1600
ID = -3.7A
8
6
4
2
0
100
-VDS , Drain-to-Source Voltage (V)
0
8
12
16
20
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
4
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
10
100us
1ms
1
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
V GS = 0 V
-VSD ,Source-to-Drain Voltage (V)
4
V DS=-16V
1.4
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7755PbF
4.0
V DS
-ID , Drain Current (A)
VGS
3.0
RD
D.U.T.
RG
-
+
VDD
VGS
2.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
1.0
td(on)
tr
t d(off)
tf
VGS
0.0
25
50
75
100
125
TC , Case Temperature ( °C)
150
10%
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
0.01
t1
1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7755PbF
RDS ( on ) , Drain-to-Source On Resistance Ω
( )
(
RDS(on), Drain-to -Source On ResistanceΩ)
0.160
0.120
0.080
ID = -3.7A
0.040
0.000
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.200
0.150
VGS = -2.5V
0.100
VGS = -4.5V
0.050
0.000
0
5
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
10
15
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
10 V
QGS
QGD
12V
.2µF
.3µF
D.U.T.
+VDS
VGS
-3mA
VG
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
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IRF7755PbF
TSSOP8 Package Outline
Dimensions are shown in milimeters (inches)
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRF7755PbF
TSSOP8 Part Marking Information
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TSSOP-8 Tape and Reel Information
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/2009
8
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