APM4542 Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 30V/7A, • Pin Description RDS(ON)=17mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V P-Channel S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 -30V/-5.5A,RDS(ON)=35mΩ(typ.) @ VGS=-10V RDS(ON)=51mΩ(typ.) @ VGS=-4.5V • SO-8 Super High Dense Cell Design for Extremely D1 Low RDS(ON) • • S2 D1 Reliable and Rugged SO-8 Package G2 G1 Applications S1 N-Channel MOSFET • D2 D2 P-Channel MOSFET Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. Ordering and Marking Information Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Orginal Device APM4542 Lead Free Code Handling Code Temp. Range Package Code APM4542 K : APM4542 XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 1 www.anpec.com.tw APM4542 Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter N-Channel P-Channel VDSS Drain-Source Voltage 30 -30 VGSS Gate-Source Voltage ±20 ±20 Maximum Drain Current – Continuous 7 -5 IDM Maximum Drain Current – Pulsed 28 -20 TA=25°C 2 2 PD Maximum Power Dissipation TA=100°C 0.8 0.8 TJ Maximum Junction Temperature ID * TSTG Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient Unit V A W 150 °C -55 to 150 °C 62.5 °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM4542 Unit Min. Typ. Max. Test Condition Static BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VGS=0V , IDS=250µA a a Notes a -30 V 1 VDS=-24V , VGS=0V P-Ch -1 VDS=VGS , IDS=250µA N-Ch 1 1.5 2 VDS=VGS , IDS=-250µA P-Ch -1 -1.5 -2 VGS=±20V , VDS=0V N-Ch ±100 VGS=±20V , VDS=0V P-Ch ±100 Drain-Source On-state VGS=4.5V , IDS=5A Resistance VGS=-10V , IDS=-5.5A Diode Forward Voltage P-Ch N-Ch VGS=-4.5V , IDS=-4A VSD 30 VDS=24V , VGS=0V VGS=10V , IDS=7A RDS(ON) N-Ch N-Ch P-Ch ISD=2A , VGS=0V N-Ch ISD=-2.3A , VGS=0V P-Ch 17 24 22 30 35 56 51 78 0.7 1.3 -0.7 -1.3 µA V nA mΩ V : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% Copyright ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 2 www.anpec.com.tw APM4542 Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) APM4542 Unit Min. Typ. Max. Test Condition b Dynamic Qg Qgs Qgd td(ON) T r td(OFF) Tf Ciss Coss Crss Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Channel N-Ch 19 28 VDS=15V , IDS= 7A P-Ch 28 36 VGS=10V N-Ch 1.6 P-Channel P-Ch 5 VDS=-15V , IDS=-5.5A N-Ch 3.6 VGS=-10V P-Ch 4 N-Channel N-Ch 11 20 VDD=15V , IDS=2A , P-Ch 12 24 VGEN=10V , RG=6Ω , N-Ch 17 28 RL=7.5Ω P-Ch 15 29 P-Channel N-Ch 36 62 VDD=-15V , IDS=-2A , P-Ch 35 60 VGEN=-10V , RG=6Ω, N-Ch 20 36 RL=7.5Ω P-Ch 15 30 N-Channel N-Ch 835 VGS=0V, VDS=25V P-Ch 950 Frequency=1.0MHz N-Ch 145 P-Channel P-Ch 160 VGS=0V, VDS=-25V N-Ch 15 Frequency=1.0MHz P-Ch 110 nC ns pF Notes b : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 3 www.anpec.com.tw APM4542 Typical Characteristics N-Channel Output Characteristics Transfer Characteristics 28 28 24 VGS= 4,5,6,7,8,9,10V ID-Drain Current (A) ID-Drain Current (A) 24 20 16 VGS=3V 12 8 16 o Tj=125 C 12 8 o Tj=25 C VGS=2V 0 1 2 3 4 0 1.5 5 2.0 VDS-Drain-to-Source Voltage (V) 3.0 3.5 On-Resistance vs. Drain Current 1.6 0.040 RDS(on)-On-Resistance (Ω) IDS =250µA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 2.5 VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature VGS(th)-Threshold Voltage (V) (Normalized) o Tj=-55 C 4 4 0 20 0.035 0.030 VGS=4.5V 0.025 0.020 0.015 0.010 0.005 0.000 -25 0 25 50 75 100 125 150 Tj-Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 VGS=10V 0 4 8 12 16 20 24 28 IDS-Drain Current (A) 4 www.anpec.com.tw APM4542 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage On-Resistaence vs. Junction Temperature 0.8 1.8 ID= 7A 0.7 RDS(on)-On-Resistance (Ω) (Normalized) RDS(on)-On-Resistance (Ω) N-Channel 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 2 4 6 8 VGS = 10V 1.6 IDS = 7A 1.4 1.2 1.0 0.8 0.6 0.4 -50 10 VGS-Gate-to-Source Voltage (V) 0 25 50 75 100 125 150 Tj-Junction Temperature (°C) Capacitance Characteristics Gate Charge 10 1200 Frequency=1MHz VDS=15V 1000 IDS =7A 8 C-Capacitance (pF) VGS-Gate-to-Source Voltage (V) -25 6 4 2 Ciss 800 600 400 Coss 200 Crss 0 0 4 8 12 16 0 20 QG-Total Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 0 5 10 15 20 25 30 VDS-Drain-to-Source Voltage (V) 5 www.anpec.com.tw APM4542 Typical Characteristics (Cont.) N-Channel Single Pulse Power 30 75 10 60 o o Tj=25 C Tj=150 C 1 Power (W) IS-Source Current (A) Source-Drain Diode Forward Voltage 45 30 15 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 1.4 VSD-Source-to-Drain Voltage 0.1 1 10 30 Time (sec) Normalized Transient Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle=0.5 PDM D=0.2 0.1 t D=0.1 1 t 1.Duty Cycle, 2D= t1/t2 0.01 1E-4 o D=0.05 2.Per Unit Base=RthJA=62.5 C/W D=0.02 3.TJM-TA=PDMZthJA D=0.01 1E-3 4.Surface Mounted SINGLE PULSE 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 6 www.anpec.com.tw APM4542 Typical Characteristics P-Channel Output Characteristics Transfer Characteristics 20 20 -ID-Drain Current (A) -ID-Drain Current (A) -VGS= 4,5,6,7,8,9,10V 15 10 -VGS=3V 5 0 15 10 5 0 0 2 4 6 8 10 o Tj=125 C 0 1 Threshold Voltage vs. Junction Temperature RDS(on)-On-Resistance (Ω) -VGS(th)-Threshold Voltage (V) (Normalized) 1.50 1.25 1.00 0.75 0.50 0.25 25 50 75 5 0.090 0.075 VGS=-4.5V 0.060 0.045 VGS=-10V 0.030 0.015 0.000 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 4 0.105 -IDS=250µΑ 0 3 On-Resistance vs. Drain Current 1.75 -25 2 -VGS - Gate-to-Source Voltage (V) -VDS - Drain-to-Source Voltage (V) 0.00 -50 o Tj=-55 C o Tj=25 C 0 5 10 15 20 -ID - Drain Current (A) 7 www.anpec.com.tw APM4542 Typical Characteristics (Cont.) P-Channel On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 1.8 -ID= 5.5A RDS(on)-On-Resistance (Ω) (Normalized) RDS(on)-On-Resistance (Ω) 0.150 0.125 0.100 0.075 0.050 0.025 0.000 2 3 4 5 6 7 8 9 -VGS = 10V 1.6 -IDS = 5.5A 1.4 1.2 1.0 0.8 0.6 0.4 -50 10 -VGS - Gate-to-Source Voltage (V) -25 0 50 100 125 150 Capacitance 10 1500 Frequency=1MHz -VDS=15 V 1250 -IDS= 5.5 A Capacitance (pF) 8 6 4 2 0 75 TJ - Junction Temperature (°C) Gate Charge -VGS-Gate-Source Voltage (V) 25 Ciss 1000 750 500 250 0 5 10 15 20 25 0 30 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 Crss Coss 0 5 10 15 20 25 30 -VDS - Drain-to-Source Voltage (V) 8 www.anpec.com.tw APM4542 Typical Characteristics (Cont.) P-Channel Source-Drain Diode Forward Voltage Single Pulse Power 20 75 60 Power (W) -IS-Source Current (A) 10 o Tj=150 C 1 o Tj=25 C 45 30 15 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 1.4 0.1 1 -VSD-Source-to-Drain Voltage (V ) 10 30 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction to Ambient 2 1 Duty Cycle=0.5 D=0.2 PDM 0.1 t D=0.1 1 t 1.Duty Cycle, 2D= t1/t2 o 2.Per Unit Base=RthJA=62.5 C/W D=0.05 3.TJM-TA=PDMZthJA D=0.02 0.01 1E-4 D=0.01 1E-3 SINGLE PULSE 4.Surface Mounted 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 9 www.anpec.com.tw APM4542 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 1. 27B S C 0. 50B S C 8° 8° 10 www.anpec.com.tw APM4542 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 11 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM4542 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 Application SOP- 8 A B 330 ± 1 F 5.5± 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 D D1 Po P1 Ao Bo Ko t 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 12 2.1± 0.1 0.3±0.013 www.anpec.com.tw APM4542 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.2 - Sep., 2003 13 www.anpec.com.tw