SSF3428 30V N-Channel MOSFET DESCRIPTION The SSF3428 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID =6A RDS(ON) < 51mΩ @ VGS=4.5V RDS(ON) < 34mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management TSOP-6 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF3428 SSF3428 TSOP-6 - - - ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V ID（25℃） 6 A ID（70℃） 4.8 A IDM 30 A PD 2 W TJ,TSTG -55 To 150 ℃ R θJA 62.5 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) www.goodark.com Page 1 of 6 Rev.2.0 SSF3428 30V N-Channel MOSFET ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) V DS=VGS,ID=250μA 3 V Drain-Source On-State Resistance RDS(ON) ON CHARACTERISTICS (Note 3) Forward Transconductance g FS 1 VGS=4.5V, ID=4.9A 40 51 mΩ VGS=10V, ID=6A 28 34 mΩ VDS=10V,ID=6A 12 S 250 PF 50 PF DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss V DS=15V,VGS=0V, F=1.0MHz Output Capacitance C oss Reverse Transfer Capacitance C rss 30 PF Turn-on Delay Time td(on) 10 nS Turn-on Rise Time tr 15 nS 25 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time VDS=15V,VGS=10V,RGEN=6Ω ID=1A td(off) Turn-Off Fall Time tf 10 nS Total Gate Charge Qg 9 nC Gate-Source Charge Qgs 1.8 nC Gate-Drain Charge Qgd 1.5 nC Body Diode Reverse Recovery Time Trr 20 nS Body Diode Reverse Recovery Charge Qrr 12 nC VDS=15V,ID=6A,VGS=10V IF=1.7A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD VGS=0V,IS=1.7A 0.8 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 6 Rev.2.0 SSF3428 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Rgen td(on) D toff tf td(off) 90% Rl Vin Vgs ton tr Vout VOUT 90% INVERTED 10% 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 1:Switching Test Circuit P D Power(W) ID- Drain Current (A） Figure 2:Switching Waveforms TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 4 Drain Current ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS www.goodark.com Figure 6 Drain-Source On-Resistance Page 3 of 6 Rev.2.0 SSF3428 ID- Drain Current (A) Normalized On-Resistance 30V N-Channel MOSFET Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) www.goodark.com Vsd Source-Drain Voltage (V) Page 4 of 6 Rev.2.0 SSF3428 30V N-Channel MOSFET Figure 11 Gate Charge ID- Drain Current (A) Figure 12 Source- Drain Diode Forward Vds Drain-Source Voltage (V) Safe Operation Area ZthJA Normalized Transient Thermal Resistance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.goodark.com Page 5 of 6 Rev.2.0 SSF3428 30V N-Channel MOSFET TSOP-6 PACKAGE INFORMATION Millimeters SYMBOL A MIN MAX 0.90 1.10 A1 0.10 b 0.30 0.50 c 0.08 0.20 D 2.70 3.10 E 2.60 3.00 E1 1.40 1.80 e L 0.95 BSC 0.35 0.55 NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 6 of 6 Rev.2.0