MCR70, MCR71 SERIES SILICON CONTROLLED RECTIFIERS High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Value Symbol Repetitive peak forward or reverse blocking voltage (1) MCR70 MCR71 1 2 3 MCR70 25 50 100 VDRM/VRRM Peak discharge current (2) Unit MCR71 Volts ITM 850 1700 Amps IT(RMS) IT(AV) 35 22 55 35 Amps Peak non-repetitive surge current (1/2 cycle, sine wave, 60Hz, TJ = 125°C) ITSM 350 550 Amps Circuit fusing (t = 8.3 ms) I2t 510 1255 A2s Critical rate of rise of current (3) di/dt 100 Forward peak gate power (t ≤ 20µs) PGM 20 Watts Forward average gate power PG(AV) 0.5 Watts IGM 2 Amps Operating junction storage temperature range TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C - 30 In. lb. On-state current (TC ≤ 75°C) Forward peak gate current (t ≤ 20µs) Mounting torque 1. 2. 3. 200 A/µs The rated voltage can be applied over the rated operating junction temperatures without incurring damage. Ratings apply for shorted-open or shorted-gate conditions or negative voltage on the gate. Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltages. Rating is for tw = 1ms. Test conditions: IG = 150mA, VD = Rated VDRM, ITM = Rated value, TJ = 125°C. THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case Symbol Max Unit RӨJC 1 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristic Peak forward or reverse blocking current (rated VDRM or VRRM) (TJ = 25°C) (TJ = 125°C) On-state voltage (1) (ITM = 70A) (ITM = 175A) (ITM = 850A, tw = 1ms) (2) (ITM = 1700A, tw = 1ms) (2) Gate trigger current (continuous dc) (VD = 12V, RL = 100Ω) MCR70 SERIES MCR71 SERIES MCR70 SERIES MCR71 SERIES Symbol Min Typ Max Unit IDRM, IRRM - - 10 2 µA mA - 1.5 1.7 6 7 1.85 2.1 - 2 10 30 VTM IGT Volts mA Rev. 20150306 High-reliability discrete products and engineering services since 1977 Gate trigger voltage (continuous dc) (VD = 12V, RL = 100Ω) (VD = rated VDRM, RL = 1kΩ, TJ = 125°C) MCR70, MCR71 SERIES SILICON CONTROLLED RECTIFIERS VGT 0.2 1 - 1.5 - Volts Holding current (ITM = 0.5A, gate open) IH 3 15 50 mA Latching current (VD = 12Vdc, IG = 150mA, tr ≤ 50µs) IL - 30 60 mA dv/dt 10 - - V/µs - 1 1.2 µS Critical rate of rise off state voltage (VD = rated VDRM, gate open, exponential waveform, TC = 125°C) Turn on time (3) (VD = rated VDRM, IG = 150mA) (ITM = 70A, peak) (ITM = 110A, peak) Notes: 1. 2. 3. ton MCR70 SERIES MCR71 SERIES Duty cycle ≤ 1%. Pulse width ≤ 300µs. Characteristic applies for tw = 1ms. tw is defined as 5 time constants of an exponentially decaying current pulse. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance. MECHANICAL CHARACTERISTICS Case: TO-48 Marking: Body painted, alpha-numeric Polarity: Anode is stud Rev. 20150306 High-reliability discrete products and engineering services since 1977 MCR70, MCR71 SERIES SILICON CONTROLLED RECTIFIERS Rev. 20150306 High-reliability discrete products and engineering services since 1977 MCR70, MCR71 SERIES SILICON CONTROLLED RECTIFIERS Rev. 20150306