English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L300R07PE4
EconoPACK™4模块采用第四代沟槽栅/场终止IGBT4和第四代发射极控制二极管带有温度检测NTC
EconoPACK™4modulewithTrench/FieldstopIGBT4andEmitterControlled4diodeandNTC
初步数据/PreliminaryData
J
VCES = 650V
IC nom = 300A / ICRM = 600A
典型应用
• 三电平应用
TypicalApplications
• 3-Level-Applications
电气特性
• 增加阻断电压至650V
• 提高工作结温Tvjop
• 沟槽栅IGBT4
• Tvjop=150°C
• VCEsat带正温度系数
ElectricalFeatures
• Increasedblockingvoltagecapabilityto650V
• ExtendedOperationTemperatureTvjop
• TrenchIGBT4
• Tvjop=150°C
• VCEsatwithpositiveTemperatureCoefficient
机械特性
• 4kV交流1分钟绝缘
• 高机械坚固性
• 集成NTC温度传感器
• 绝缘的基板
• 标封装
MechanicalFeatures
• 4kVAC1minInsulation
• Highmechanicalrobustness
• IntegratedNTCtemperaturesensor
• IsolatedBasePlate
• StandardHousing
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:AS
dateofpublication:2013-11-05
approvedby:MK
revision:2.1
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L300R07PE4
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
650
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 70°C, Tvj max = 175°C
IC nom 300
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
600
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
940
W
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 300 A, VGE = 15 V
IC = 300 A, VGE = 15 V
IC = 300 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 4,80 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VCE sat
typ.
max.
1,55
1,70
1,75
1,95
V
V
V
VGEth
5,0
5,8
6,5
V
VGE = -15 V ... +15 V
QG
3,00
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
1,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
18,5
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,57
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 650 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
td on
0,11
0,12
0,13
µs
µs
µs
tr
0,05
0,06
0,06
µs
µs
µs
td off
0,49
0,52
0,53
µs
µs
µs
tf
0,05
0,07
0,07
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 300 A, VCE = 300 V
VGE = ±15 V
RGon = 2,0 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 300 A, VCE = 300 V
VGE = ±15 V
RGon = 2,0 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 300 A, VCE = 300 V
VGE = ±15 V
RGoff = 2,0 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 300 A, VCE = 300 V
VGE = ±15 V
RGoff = 2,0 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 300 A, VCE = 300 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 3400 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 2,0 Ω
Tvj = 150°C
Eon
1,50
2,00
2,50
mJ
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 300 A, VCE = 300 V, LS = 30 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3300 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 2,0 Ω
Tvj = 150°C
Eoff
14,0
17,5
18,5
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
ISC
1500
1200
A
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,063
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:AS
dateofpublication:2013-11-05
approvedby:MK
revision:2.1
2
tP ≤ 10 µs, Tvj = 25°C
tP ≤ 10 µs, Tvj = 150°C
0,16 K/W
K/W
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L300R07PE4
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 650
V
IF
300
A
IFRM
600
A
I²t
6000
5600
特征值/CharacteristicValues
min.
typ.
max.
1,55
1,50
1,45
1,95
A²s
A²s
正向电压
Forwardvoltage
IF = 300 A, VGE = 0 V
IF = 300 A, VGE = 0 V
IF = 300 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 300 A, - diF/dt = 3400 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
IRM
145
195
210
A
A
A
恢复电荷
Recoveredcharge
IF = 300 A, - diF/dt = 3400 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Qr
11,0
21,0
24,0
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 300 A, - diF/dt = 3400 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Erec
3,50
6,10
7,00
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,125
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:AS
dateofpublication:2013-11-05
approvedby:MK
revision:2.1
3
V
V
V
0,32 K/W
K/W
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L300R07PE4
初步数据
PreliminaryData
二极管,三电平/Diode,3-Level
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 650
V
IF
300
A
IFRM
600
A
I²t
6000
5600
特征值/CharacteristicValues
min.
typ.
max.
1,55
1,50
1,45
1,95
A²s
A²s
正向电压
Forwardvoltage
IF = 300 A, VGE = 0 V
IF = 300 A, VGE = 0 V
IF = 300 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 300 A, - diF/dt = 3400 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
Tvj = 125°C
Tvj = 150°C
IRM
145
195
210
A
A
A
恢复电荷
Recoveredcharge
IF = 300 A, - diF/dt = 3400 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
Tvj = 125°C
Tvj = 150°C
Qr
11,0
21,0
24,0
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 300 A, - diF/dt = 3400 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
Tvj = 125°C
Tvj = 150°C
Erec
3,50
6,10
7,00
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,125
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
min.
typ.
max.
R25
5,00
kΩ
∆R/R
-5
5
%
P25
20,0
mW
V
V
V
0,32 K/W
K/W
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:AS
dateofpublication:2013-11-05
approvedby:MK
revision:2.1
4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L300R07PE4
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
爬电距离
Creepagedistance
VISOL 4,0
kV
Cu
Al2O3
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
25,0
12,5
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
11,0
7,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 200
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K)
杂散电感,模块
Strayinductancemodule
min.
typ.
RthCH
0,009
LsCE
45
nH
储存温度
Storagetemperature
Tstg
-40
125
°C
模块安装的安装扭距
Mountingtorqueformodulmounting
螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote
M
3,00
-
6,00
Nm
端子联接扭距
Terminalconnectiontorque
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
3,0
-
6,0
Nm
重量
Weight
G
400
g
preparedby:AS
dateofpublication:2013-11-05
approvedby:MK
revision:2.1
5
max.
K/W
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L300R07PE4
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
600
600
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
500
500
450
450
400
400
350
350
300
300
250
250
200
200
150
150
100
100
50
50
0
0,0
0,4
0,8
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
550
IC [A]
IC [A]
550
1,2
1,6
VCE [V]
2,0
2,4
0
2,8
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=2Ω,RGoff=2Ω,VCE=300V
600
50
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
550
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
45
500
40
450
35
400
30
E [mJ]
IC [A]
350
300
250
25
20
200
15
150
10
100
5
50
0
5
6
7
8
9
VGE [V]
10
11
0
12
preparedby:AS
dateofpublication:2013-11-05
approvedby:MK
revision:2.1
6
0
100
200
300
IC [A]
400
500
600
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L300R07PE4
初步数据
PreliminaryData
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=300A,VCE=300V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
35
1
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
30
ZthJC : IGBT
25
0,1
E [mJ]
ZthJC [K/W]
20
15
0,01
10
5
0
i:
1
2
3
4
ri[K/W]: 0,0096 0,0528 0,0512 0,0464
τi[s]:
0,01
0,02
0,05
0,1
0
2
4
6
8
10 12
RG [Ω]
14
16
18
0,001
0,001
20
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=2Ω,Tvj=150°C
0,01
0,1
t [s]
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
700
600
IC, Chip
IC, Modul short path
IC, Modul long path
600
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
540
480
500
420
360
IF [A]
IC [A]
400
300
300
240
180
200
120
100
60
0
0
100
200
300
400
VCE [V]
500
600
0
700
preparedby:AS
dateofpublication:2013-11-05
approvedby:MK
revision:2.1
7
0,0
0,2
0,4
0,6
0,8
1,0 1,2
VF [V]
1,4
1,6
1,8
2,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L300R07PE4
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=2Ω,VCE=300V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=300A,VCE=300V
10
10
Erec, Tvj = 125°C
Erec, Tvj = 150°C
8
8
7
7
6
6
5
5
4
4
3
3
2
2
1
1
0
0
100
200
Erec, Tvj = 125°C
Erec, Tvj = 150°C
9
E [mJ]
E [mJ]
9
300
IF [A]
400
500
0
600
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
0
2
4
6
8
10 12
RG [Ω]
14
16
18
20
1,6
1,8
2,0
正向偏压特性二极管,三电平(典型)
forwardcharacteristicofDiode,3-Level(typical)
IF=f(VF)
1
600
ZthJC : Diode
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
540
480
420
IF [A]
ZthJC [K/W]
360
0,1
300
240
180
120
i:
1
2
3
4
ri[K/W]: 0,0192 0,1056 0,1024 0,0928
τi[s]:
0,01
0,02
0,05
0,1
0,01
0,001
0,01
0,1
t [s]
1
60
0
10
preparedby:AS
dateofpublication:2013-11-05
approvedby:MK
revision:2.1
8
0,0
0,2
0,4
0,6
0,8
1,0 1,2
VF [V]
1,4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L300R07PE4
初步数据
PreliminaryData
瞬态热阻抗二极管,三电平
transientthermalimpedanceDiode,3-Level
ZthJC=f(t)
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
1
100000
ZthJC : Diode
Rtyp
R[Ω]
ZthJC [K/W]
10000
0,1
1000
i:
1
2
3
4
ri[K/W]: 0,0192 0,1056 0,1024 0,0928
τi[s]:
0,01
0,02
0,05
0,1
0,01
0,001
0,01
0,1
t [s]
1
100
10
preparedby:AS
dateofpublication:2013-11-05
approvedby:MK
revision:2.1
9
0
20
40
60
80
100
TC [°C]
120
140
160
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L300R07PE4
初步数据
PreliminaryData
接线图/circuit_diagram_headline
J
封装尺寸/packageoutlines
preparedby:AS
dateofpublication:2013-11-05
approvedby:MK
revision:2.1
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L300R07PE4
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
产品规格书中的数据是专门为技术人员提供的,您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合
产品规格书中所描述的产品特性是被保证的,任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外,产品和产品的特性没有任何的保证
请注意安装及应用指南中的信息。
如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话,请联系我们负责你的销售部门(详情查询
www.infineon.com)。对那些特别感兴趣的问题我们将提供相应的应用手册
由于技术需要,我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门
如果您想将我们的产品用于航天,健康,危及生命或者生命维持等应用,请申明。
请注意,对这类应用我们强烈建议
-执行联合的风险和质量评估
-得到质量协议的结论
-建立联合的测试和出厂产品检查,我们可以根据测试的实际情况供货
如果有必要,请根据实际需要将类似的说明给你的客户
保留产品规格书的修改权
Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
interestedwemayprovideapplicationnotes.
Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
salesoffice,whichisresponsibleforyou.
ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
-toperformjointRiskandQualityAssessments;
-theconclusionofQualityAgreements;
-toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon
therealizationofanysuchmeasures.
Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers.
Changesofthisproductdatasheetarereserved.
preparedby:AS
dateofpublication:2013-11-05
approvedby:MK
revision:2.1
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