English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L300R12ME4_B23
EconoDUAL™3模块采用第四代沟槽栅/场终止IGBT4和HE型发射极控制二极管带有温度检测NTC
EconoDUAL™3modulewithTrench/FieldstopIGBT4andEmitterControlledHEdiodeandNTC
J
VCES = 1200V
IC nom = 300A / ICRM = 600A
典型应用
• 三电平应用
TypicalApplications
• 3-Level-Applications
电气特性
• 提高工作结温Tvjop
• 低开关损耗
• 低VCEsat
• 无与伦比的坚固性
• Tvjop=150°C
• VCEsat带正温度系数
ElectricalFeatures
• ExtendedOperationTemperatureTvjop
• LowSwitchingLosses
• LowVCEsat
• UnbeatableRobustness
• Tvjop=150°C
• VCEsatwithpositiveTemperatureCoefficient
机械特性
• 绝缘的基板
• 标封装
MechanicalFeatures
• IsolatedBasePlate
• StandardHousing
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:CU
dateofpublication:2015-04-27
approvedby:MK
revision:V3.1
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L300R12ME4_B23
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1200
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
300
450
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
600
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
1550
W
VGES
+/-20
V
栅极-发射极峰值电压
Gate-emitterpeakvoltage
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 300 A, VGE = 15 V
IC = 300 A, VGE = 15 V
IC = 300 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VCE sat
A
A
typ.
max.
1,75
2,00
2,05
2,10
V
V
V
5,80
6,40
V
栅极阈值电压
Gatethresholdvoltage
IC = 11,5 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VGE = -15 V ... +15 V
QG
2,25
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
2,5
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
19,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
1,05
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
100
nA
VGEth
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGon = 0,82 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGon = 0,82 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGoff = 0,82 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGoff = 0,82 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 300 A, VCE = 600 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 4150 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 0,82 Ω
Tvj = 150°C
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
5,20
0,20
0,22
0,23
µs
µs
µs
0,05
0,06
0,06
µs
µs
µs
0,40
0,50
0,53
µs
µs
µs
0,06
0,10
0,11
µs
µs
µs
Eon
23,0
34,0
37,0
mJ
mJ
mJ
IC = 300 A, VCE = 600 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 2900 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 0,82 Ω
Tvj = 150°C
Eoff
23,0
36,0
40,0
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
ISC
1900
1400
A
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
在开关状态下温度
Temperatureunderswitchingconditions
tP ≤ 10 µs, Tvj = 25°C
tP ≤ 10 µs, Tvj = 150°C
td on
tr
td off
tf
Tvj op
preparedby:CU
dateofpublication:2015-04-27
approvedby:MK
revision:V3.1
2
0,0970 K/W
0,0300
-40
K/W
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L300R12ME4_B23
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 1200
V
IF
300
A
IFRM
600
A
I²t
19000
15500
特征值/CharacteristicValues
min.
A²s
A²s
typ.
max.
2,15
VF
1,65
1,65
1,65
IF = 300 A, - diF/dt = 4150 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
IRM
225
255
270
A
A
A
恢复电荷
Recoveredcharge
IF = 300 A, - diF/dt = 4150 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Qr
30,0
56,5
66,0
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 300 A, - diF/dt = 4150 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Erec
11,0
21,5
25,5
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
正向电压
Forwardvoltage
IF = 300 A, VGE = 0 V
IF = 300 A, VGE = 0 V
IF = 300 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
preparedby:CU
dateofpublication:2015-04-27
approvedby:MK
revision:V3.1
3
V
V
V
0,145 K/W
0,0450
-40
K/W
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L300R12ME4_B23
二极管,三电平/Diode,3-Level
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 1200
V
IF
300
A
IFRM
600
A
I²t
19000
15500
特征值/CharacteristicValues
min.
A²s
A²s
typ.
max.
2,15
VF
1,65
1,65
1,65
IF = 300 A, - diF/dt = 4150 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
Tvj = 150°C
IRM
225
255
270
A
A
A
恢复电荷
Recoveredcharge
IF = 300 A, - diF/dt = 4150 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
Tvj = 150°C
Qr
30,0
56,5
66,0
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 300 A, - diF/dt = 4150 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
Tvj = 150°C
Erec
11,0
21,5
25,5
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
正向电压
Forwardvoltage
IF = 300 A, VGE = 0 V
IF = 300 A, VGE = 0 V
IF = 300 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
V
V
V
0,145 K/W
0,0450
-40
K/W
150
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
min.
typ.
max.
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
R25
∆R/R
5,00
-5
P25
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:CU
dateofpublication:2015-04-27
approvedby:MK
revision:V3.1
4
kΩ
5
%
20,0
mW
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L300R12ME4_B23
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min
VISOL 2,5
kV
Cu
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
Al2O3
爬电距离
Creepagedistance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
14,5
13,0
mm
电气间隙
Clearance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
12,5
10,0
mm
> 200
相对电痕指数
Comperativetrackingindex
CTI
min.
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K)
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
0,009
K/W
LsCE
35
nH
RCC'+EE'
1,45
mΩ
Tstg
-40
125
°C
6,00
Nm
6,0
Nm
螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote
M
3,00
端子联接扭距
Terminalconnectiontorque
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
3,0
G
preparedby:CU
dateofpublication:2015-04-27
approvedby:MK
revision:V3.1
5
max.
RthCH
模块安装的安装扭距
Mountingtorqueformodulmounting
重量
Weight
typ.
345
g
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L300R12ME4_B23
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
600
600
500
500
400
400
IC [A]
IC [A]
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
300
300
200
200
100
100
0
0,0
0,5
1,0
1,5
2,0
VCE [V]
2,5
3,0
0
3,5
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=0.82Ω,RGoff=0.82Ω,VCE=600V
600
120
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
110
500
100
90
400
80
E [mJ]
IC [A]
70
300
60
50
200
40
30
100
20
10
0
5
6
7
8
9
VGE [V]
10
11
12
0
13
preparedby:CU
dateofpublication:2015-04-27
approvedby:MK
revision:V3.1
6
0
100
200
300
IC [A]
400
500
600
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L300R12ME4_B23
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=300A,VCE=600V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
90
1
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
80
ZthJC : IGBT
70
0,1
ZthJC [K/W]
E [mJ]
60
50
40
30
0,01
20
i:
1
2
3
4
ri[K/W]: 0,00582 0,03201 0,03104 0,02813
τi[s]:
0,01
0,02
0,05
0,1
10
0
0
2
4
6
8
0,001
0,001
10
0,01
RG [Ω]
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=0.82Ω,Tvj=150°C
0,1
t [s]
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
700
600
IC, Modul
IC, Chip
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
600
500
500
400
IF [A]
IC [A]
400
300
300
200
200
100
100
0
0
200
400
600
800
VCE [V]
1000
1200
0
1400
preparedby:CU
dateofpublication:2015-04-27
approvedby:MK
revision:V3.1
7
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VF [V]
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L300R12ME4_B23
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=0.82Ω,VCE=600V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=300A,VCE=600V
40
30
Erec, Tvj = 125°C
Erec, Tvj = 150°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
35
25
30
20
E [mJ]
E [mJ]
25
20
15
15
10
10
5
5
0
0
100
200
300
IF [A]
400
500
0
600
0
2
4
6
8
10
RG [Ω]
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
正向偏压特性二极管,三电平(典型)
forwardcharacteristicofDiode,3-Level(typical)
IF=f(VF)
1
600
ZthJC : Diode
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
500
400
IF [A]
ZthJC [K/W]
0,1
0,01
200
100
i:
1
2
3
4
ri[K/W]: 0,00876 0,04818 0,04672 0,04234
τi[s]:
0,01
0,02
0,05
0,1
0,001
0,001
300
0,01
0,1
t [s]
1
0
10
preparedby:CU
dateofpublication:2015-04-27
approvedby:MK
revision:V3.1
8
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VF [V]
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L300R12ME4_B23
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
100000
Rtyp
R[Ω]
10000
1000
100
0
20
40
60
80
100
TC [°C]
120
140
160
preparedby:CU
dateofpublication:2015-04-27
approvedby:MK
revision:V3.1
9
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L300R12ME4_B23
接线图/Circuitdiagram
J
封装尺寸/Packageoutlines
In fin e o n
preparedby:CU
dateofpublication:2015-04-27
approvedby:MK
revision:V3.1
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F3L300R12ME4_B23
使用条件和条款
使用条件和条款
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www.infineon.com)。对那些特别感兴趣的问题我们将提供相应的应用手册
由于技术需要,我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门
如果您想将我们的产品用于航天,健康,危及生命或者生命维持等应用,请申明。
请注意,对这类应用我们强烈建议
-执行联合的风险和质量评估
-得到质量协议的结论
-建立联合的测试和出厂产品检查,我们可以根据测试的实际情况供货
如果有必要,请根据实际需要将类似的说明给你的客户
保留产品规格书的修改权
Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
interestedwemayprovideapplicationnotes.
Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
salesoffice,whichisresponsibleforyou.
ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
-toperformjointRiskandQualityAssessments;
-theconclusionofQualityAgreements;
-toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon
therealizationofanysuchmeasures.
Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers.
Changesofthisproductdatasheetarereserved.
preparedby:CU
dateofpublication:2015-04-27
approvedby:MK
revision:V3.1
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