English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R17KE4
62mmC-Series模块采用第四代沟槽栅/场终止IGBT4和发射极控制二极管
62mmC-Seriesmodulewithtrench/fieldstopIGBT4andEmitterControlledDiode
初步数据/PreliminaryData
VCES = 1700V
IC nom = 300A / ICRM = 600A
典型应用
• 大功率变流器
• 电机传动
• UPS系统
• 风力发电机
TypicalApplications
• HighPowerConverters
• MotorDrives
• UPSSystems
• WindTurbines
电气特性
• 提高工作结温Tvjop
• 低VCEsat
• 无与伦比的坚固性
• VCEsat带正温度系数
ElectricalFeatures
• ExtendedOperationTemperatureTvjop
• LowVCEsat
• UnbeatableRobustness
• VCEsatwithpositiveTemperatureCoefficient
机械特性
• 4kV交流1分钟绝缘
• 封装的CTI>400
• 高爬电距离和电气间隙
• 绝缘的基板
• 标封装
MechanicalFeatures
• 4kVAC1minInsulation
• PackagewithCTI>400
• HighCreepageandClearanceDistances
• IsolatedBasePlate
• StandardHousing
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:MB
dateofpublication:2013-11-05
approvedby:RO
revision:2.2
1
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R17KE4
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1700
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
300
440
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
600
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
1800
W
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 300 A, VGE = 15 V
IC = 300 A, VGE = 15 V
IC = 300 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 12,0 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VCE sat
A
A
typ.
max.
1,95
2,35
2,45
2,30
V
V
V
VGEth
5,2
5,8
6,4
V
VGE = -15 V ... +15 V
QG
3,05
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
2,5
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
24,5
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,81
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
100
nA
td on
0,24
0,28
0,30
µs
µs
µs
tr
0,05
0,055
0,055
µs
µs
µs
td off
0,70
0,74
0,78
µs
µs
µs
tf
0,08
0,13
0,15
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 300 A, VCE = 900 V
VGE = ±15 V
RGon = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 300 A, VCE = 900 V
VGE = ±15 V
RGon = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 300 A, VCE = 900 V
VGE = ±15 V
RGoff = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 300 A, VCE = 900 V
VGE = ±15 V
RGoff = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 300 A, VCE = 900 V, LS = 60 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 4800 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 2,4 Ω
Tvj = 150°C
Eon
63,0
86,0
93,0
mJ
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 300 A, VCE = 900 V, LS = 60 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3600 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 2,4 Ω
Tvj = 150°C
Eoff
55,0
90,0
100
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
ISC
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,033
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:MB
dateofpublication:2013-11-05
approvedby:RO
revision:2.2
2
tP ≤ 10 µs, Tvj = 150°C
1400
A
0,083 K/W
K/W
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R17KE4
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 1700
V
IF
300
A
IFRM
600
A
I²t
14500
14000
特征值/CharacteristicValues
min.
typ.
max.
1,80
1,90
1,95
2,20
A²s
A²s
正向电压
Forwardvoltage
IF = 300 A, VGE = 0 V
IF = 300 A, VGE = 0 V
IF = 300 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 300 A, - diF/dt = 4800 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
IRM
270
340
360
A
A
A
恢复电荷
Recoveredcharge
IF = 300 A, - diF/dt = 4800 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Qr
50,0
105
120
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 300 A, - diF/dt = 4800 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Erec
28,0
58,0
68,0
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,051
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:MB
dateofpublication:2013-11-05
approvedby:RO
revision:2.2
3
V
V
V
0,13 K/W
K/W
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R17KE4
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
爬电距离
Creepagedistance
VISOL 4,0
kV
Cu
Al2O3
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
29,0
23,0
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
23,0
11,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 400
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K)
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
min.
typ.
RthCH
0,01
LsCE
20
nH
RCC'+EE'
0,70
mΩ
Tstg
-40
125
°C
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
3,00
-
6,00
Nm
端子联接扭距
Terminalconnectiontorque
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
2,5
-
5,0
Nm
重量
Weight
G
340
g
preparedby:MB
dateofpublication:2013-11-05
approvedby:RO
revision:2.2
4
max.
K/W
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R17KE4
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
600
600
500
500
400
400
IC [A]
IC [A]
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
300
300
200
200
100
100
0
0,0
0,5
1,0
1,5
2,0
VCE [V]
2,5
3,0
3,5
0
4,0
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
VGE = 20V
VGE = 15V
VGE = 12 V
VGE = 10V
VGE = 9V
VGE = 8V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=2.4Ω,RGoff=2.4Ω,VCE=900V
600
200
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
180
500
160
140
400
E [mJ]
IC [A]
120
300
100
80
200
60
40
100
20
0
5
6
7
8
9
VGE [V]
10
11
12
0
13
preparedby:MB
dateofpublication:2013-11-05
approvedby:RO
revision:2.2
5
0
100
200
300
IC [A]
400
500
600
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R17KE4
初步数据
PreliminaryData
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=300A,VCE=900V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
300
0,1
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
270
240
ZthJC : IGBT
210
ZthJC [K/W]
E [mJ]
180
150
120
0,01
90
60
i:
1
2
3
4
ri[K/W]: 0,00276 0,0127 0,0588 0,00874
τi[s]:
0,0008 0,013 0,05
0,6
30
0
0
2
4
6
8
0,001
0,001
10 12 14 16 18 20 22 24
RG [Ω]
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=2.4Ω,Tvj=150°C
0,01
0,1
t [s]
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
800
600
IC, Modul
IC, Chip
700
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
500
600
400
IF [A]
IC [A]
500
400
300
300
200
200
100
100
0
0
200
400
600
0
800 1000 1200 1400 1600 1800
VCE [V]
preparedby:MB
dateofpublication:2013-11-05
approvedby:RO
revision:2.2
6
0,0
0,5
1,0
1,5
VF [V]
2,0
2,5
3,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R17KE4
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=2.4Ω,VCE=900V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=300A,VCE=900V
90
100
Erec, Tvj = 125°C
Erec, Tvj = 150°C
80
Erec, Tvj = 125°C
Erec, Tvj = 150°C
90
80
70
70
60
E [mJ]
E [mJ]
60
50
40
50
40
30
30
20
20
10
0
10
0
100
200
300
IF [A]
400
500
0
600
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
1
ZthJC : Diode
ZthJC [K/W]
0,1
0,01
i:
1
2
3
4
ri[K/W]: 0,00819 0,03094 0,08177 0,0091
τi[s]:
0,0008 0,013
0,05
0,6
0,001
0,001
0,01
0,1
t [s]
1
10
preparedby:MB
dateofpublication:2013-11-05
approvedby:RO
revision:2.2
7
0
2
4
6
8
10 12 14 16 18 20 22 24
RG [Ω]
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R17KE4
初步数据
PreliminaryData
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
In fin e o n
preparedby:MB
dateofpublication:2013-11-05
approvedby:RO
revision:2.2
8
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF300R17KE4
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
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Terms&Conditionsofusage
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havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
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characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
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preparedby:MB
dateofpublication:2013-11-05
approvedby:RO
revision:2.2
9
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