NUD3160 D

NUD3160, SZNUD3160
Industrial Inductive
Load Driver
This micro−integrated part provides a single component solution to
switch inductive loads such as relays, solenoids, and small DC motors
without the need of a free−wheeling diode. It accepts logic level
inputs, thus allowing it to be driven by a large variety of devices
including logic gates, inverters, and microcontrollers.
http://onsemi.com
MARKING DIAGRAMS
Features
3
• Provides Robust Interface between D.C. Relay Coils and Sensitive
•
•
•
•
•
•
1
Logic
Capable of Driving Relay Coils Rated up to 150 mA at 12 V, 24 V
or 48 V
Replaces 3 or 4 Discrete Components for Lower Cost
Internal Zener Eliminates Need for Free−Wheeling Diode
Meets Load Dump and other Automotive Specs
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These are Pb−Free Devices
2
JW8 MG
G
JW8 = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
SC−74
CASE 318F
STYLE 7
6
1
JW8 MG
G
JW8 = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Typical Applications
• Automotive and Industrial Environment
• Drives Window, Latch, Door, and Antenna Relays
ORDERING INFORMATION
Package
Shipping†
NUD3160LT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
SZNUD3160LT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
NUD3160DMT1G
SC−74
(Pb−Free)
3000 / Tape &
Reel
SZNUD3160DMT1G
SC−74
(Pb−Free)
3000 / Tape &
Reel
Device
Benefits
•
•
•
•
SOT−23
CASE 318
STYLE 21
Reduced PCB Space
Standardized Driver for Wide Range of Relays
Simplifies Circuit Design and PCB Layout
Compliance with Automotive Specifications
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Drain (3)
Gate (1)
Gate (2)
10 k
100 k
10 k
10 k
CASE 318
© Semiconductor Components Industries, LLC, 2012
Gate (5)
100 k
100 k
Source (2)
February, 2012 − Rev. 6
Drain (3)
Drain (6)
Source (4)
Source (1)
CASE 318F
Figure 1. Internal Circuit Diagrams
1
Publication Order Number:
NUD3160/D
NUD3160, SZNUD3160
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Symbol
Rating
Value
Unit
VDSS
Drain−to−Source Voltage – Continuous (TJ = 125°C)
60
V
VGSS
Gate−to−Source Voltage – Continuous (TJ = 125°C)
12
V
ID
Drain Current – Continuous (TJ = 125°C)
Minimum copper, double sided board, TA = 80°C
SOT−23
SC74 Single device driven
SC74 Both devices driven
1 in2 copper, double sided board, TA = 25°C
SOT−23
SC74 Single device driven
SC74 Both devices driven
mA
158
157
132 ea
272
263
230 ea
EZ
Single Pulse Drain−to−Source Avalanche Energy
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
200
mJ
PPK
Peak Power Dissipation, Drain−to−Source (Notes 1 and 2)
(TJ Initial = 85°C)
20
W
ELD1
Load Dump Pulse, Drain−to−Source (Note 3)
RSOURCE = 0.5 W, T = 300 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
60
V
ELD2
Inductive Switching Transient 1, Drain−to−Source
(Waveform: RSOURCE = 10 W, T = 2.0 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
100
V
ELD3
Inductive Switching Transient 2, Drain−to−Source
(Waveform: RSOURCE = 4.0 W, T = 50 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
300
V
Rev−Bat
Reverse Battery, 10 Minutes (Drain−to−Source)
(For Relay’s Coils/Inductive Loads of 80 W or more)
−14
V
Dual−Volt
Dual Voltage Jump Start, 10 Minutes (Drain−to−Source)
28
V
2000
V
ESD
Human Body Model (HBM)
According to EIA/JESD22/A114 Specification
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
http://onsemi.com
2
NUD3160, SZNUD3160
THERMAL CHARACTERISTICS
Symbol
Rating
Unit
TA
Operating Ambient Temperature
−40 to 125
°C
TJ
Maximum Junction Temperature
150
°C
−65 to 150
°C
TSTG
Storage Temperature Range
PD
Total Power Dissipation (Note 4)
Derating above 25°C
SOT−23
225
1.8
mW
mW/°C
PD
Total Power Dissipation (Note 4)
Derating above 25°C
SC−74
380
3.0
mW
mW/°C
SOT−23
SC−74 One Device Powered
SC−74 Both Devices Equally Powered
556
556
398
SOT−23
SC−74 One Device Powered
SC−74 Both Devices Equally Powered
395
420
270
RqJA
Thermal Resistance, Junction–to–Ambient
Minimum Copper
300 mm2 Copper
1.
2.
3.
4.
Value
Nonrepetitive current square pulse 1.0 ms duration.
For different square pulse durations, see Figure 12.
Nonrepetitive load dump pulse per Figure 3.
Mounted onto minimum pad board.
http://onsemi.com
3
°C/W
NUD3160, SZNUD3160
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Min
Typ
Max
Unit
VBRDSS
61
66
70
V
−
−
−
−
−
−
−
−
0.5
1.0
50
80
−
−
−
−
−
−
−
−
60
80
90
110
1.3
1.3
1.8
−
2.0
2.0
−
−
−
−
−
−
−
−
2.4
3.7
1.8
2.9
150
100
200
−
−
−
gFS
−
400
−
mmho
Input Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Ciss
−
30
−
pf
Output Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Coss
−
14
−
pf
Transfer Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Crss
−
6.0
−
pf
tPHL
tPLH
−
−
918
798
−
−
tPHL
tPLH
−
−
331
1160
−
−
tf
tr
−
−
2290
618
−
−
tf
tr
−
−
622
600
−
−
Characteristic
OFF CHARACTERISTICS
Drain to Source Sustaining Voltage
(ID = 10 mA)
Drain to Source Leakage Current
(VDS = 12 V, VGS = 0 V)
(VDS = 12 V, VGS = 0 V, TJ = 125°C)
(VDS = 60 V, VGS = 0 V)
(VDS = 60 V, VGS = 0 V, TJ = 125°C)
IDSS
Gate Body Leakage Current
(VGS = 3.0 V, VDS = 0 V)
(VGS = 3.0 V, VDS = 0 V, TJ = 125°C)
(VGS = 5.0 V, VDS = 0 V)
(VGS = 5.0 V, VDS = 0 V, TJ = 125°C)
IGSS
mA
mA
ON CHARACTERISTICS
Gate Threshold Voltage
(VGS = VDS, ID = 1.0 mA)
(VGS = VDS, ID = 1.0 mA, TJ = 125°C)
VGS(th)
Drain to Source On−Resistance
(ID = 150 mA, VGS = 3.0 V)
(ID = 150 mA, VGS = 3.0 V, TJ = 125°C)
(ID = 150 mA, VGS = 5.0 V)
(ID = 150 mA, VGS = 5.0 V, TJ = 125°C)
RDS(on)
Output Continuous Current
(VDS = 0.3 V, VGS = 5.0 V)
(VDS = 0.3 V, VGS = 5.0 V, TJ = 125°C)
IDS(on)
Forward Transconductance
(VDS = 12 V, ID = 150 mA)
V
W
mA
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Propagation Delay Times:
High to Low Propagation Delay; Figure 2, (VDS = 12 V, VGS = 3.0 V)
Low to High Propagation Delay; Figure 2, (VDS = 12 V, VGS = 3.0 V)
High to Low Propagation Delay; Figure 2, (VDS = 12 V, VGS = 5.0 V)
Low to High Propagation Delay; Figure 2, (VDS = 12 V, VGS = 5.0 V)
Transition Times:
Fall Time; Figure 2, (VDS = 12 V, VGS = 3.0 V)
Rise Time; Figure 2, (VDS = 12 V, VGS = 3.0 V)
Fall Time; Figure 2, (VDS = 12 V, VGS = 5.0 V)
Rise Time; Figure 2, (VDS = 12 V, VGS = 5.0 V)
http://onsemi.com
4
ns
ns
NUD3160, SZNUD3160
TYPICAL WAVEFORMS
(TJ = 25°C unless otherwise specified)
VIH
Vin
50%
0V
tPHL
tPLH
VOH
90%
Vout
50%
10%
VOL
tr
tf
Figure 2. Switching Waveforms
tr
Load Dump Pulse Not Suppressed:
Vr = 13.5 V Nominal ±10%
VS = 60 V Nominal ±10%
T = 300 ms Nominal ±10%
tr = 1 − 10 ms ±10%
90%
10% of Peak;
Reference = Vr, Ir
10%
Vr, Ir
Figure 3. Load Dump Waveform Definition
http://onsemi.com
5
VS
T
NUD3160, SZNUD3160
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise specified)
80
VDS = 60 V
70
IGSS GATE LEAKAGE (mA)
IDSS, DRAIN LEAKAGE (mA)
80
60
50
40
30
20
10
0
−50
−25
0
25
50
100
75
VGS = 5 V
50
40
VGS = 3 V
30
−25
1E+03
ID = 10 mA
65.6
65.4
65.2
65.0
−25
0
25
75
50
100
VGS = 5 V
VGS = 2 V
1E+01
1E+00
1E−01
VGS = 1.5 V
1E−02
1E−03
0.0
125
0.01
0.001
125 °C
1E−05
1.4
−40 °C
1.6
1.8
2.0
2.2
2.4
VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(ON), DRAIN−TO−SOURCE RESISTANCE (mW)
ID DRAIN CURRENT (mA)
VDS = 0.8 V
1.2
0.3
0.4
0.5
0.6
0.7
0.8
Figure 7. Output Characteristics
1
25 °C
0.2
0.1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Breakdown Voltage vs.
Junction Temperature
85 °C
125
VGS = 2.5 V
VGS = 3 V
1E+02
TJ, JUNCTION TEMPERATURE (°C)
1E−07
1.0
100
75
Figure 5. Gate−to−Source Leakage vs.
Junction Temperature
65.8
1E−06
50
Figure 4. Drain−to−Source Leakage vs.
Junction Temperature
66.0
1E−04
25
TJ, JUNCTION TEMPERATURE (°C)
66.2
0.1
0
TJ, JUNCTION TEMPERATURE (°C)
ID DRAIN CURRENT (mA)
BVDSS BREAKDOWN VOLTAGE (V)
60
20
−50
125
66.4
64.8
−50
70
2.6
3200
ID = 0.15 A
2800
2400
VGS = 3.0 V
2000
1600
VGS = 5.0 V
1200
800
−50
Figure 8. Transfer Function
−25
0
25
50
75
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. On Resistance Variation vs
Junction Temperature
http://onsemi.com
6
100
125
NUD3160, SZNUD3160
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise specified)
90
ID = 250 mA
125 °C
VZ ZENER CLAMP VOLTAGE (V)
RDS(ON), DRAIN−TO−SOURCE
RESISTANCE (mW)
100
80
70
60
85 °C
50
25 °C
40
30
−40 °C
20
10
0
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
68.0
67.5
67.0
66.5
−40 °C
66.0
65.5
25 °C
85 °C
65.0
64.5
64.0
63.5
63.0
62.5
62.0
0.1
125 °C
1.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
100
1000
IZ, ZENER CURRENT (mA)
Figure 11. Zener Clamp Voltage vs. Zener
Current
Figure 10. On Resistance Variation vs.
Gate−to−Source Voltage
100
600
SC74−1 (One Device Powered)
qJA (°C/W)
POWER (WATTS)
SC74−2 (Both Devices Powered Equally)
500
10
SC74−1
400
SOT23
300
1
0.1
1.0
10
200
100
SC74−2
1 oz. Copper, Single−sided Board
0
100
200
300
400
500
600
PW, PULSE WIDTH (ms)
COPPER AREA (mm2)
Figure 12. Maximum Non−repetitive Surge
Power vs. Pulse Width
Figure 13. Thermal Performance vs. Board
Copper Area
http://onsemi.com
7
700
NUD3160, SZNUD3160
APPLICATIONS INFORMATION
12 V Battery
−
+
NC
NO
Relay, Vibrator,
or
Inductive Load
Drain (3)
Gate (1)
Micro
Processor
Signal
for
Relay
10 k
100 K
NUD3160
Source (2)
Figure 14. Applications Diagram
http://onsemi.com
8
NUD3160, SZNUD3160
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
9
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
NUD3160, SZNUD3160
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. 318F−01, −02, −03, −04 OBSOLETE. NEW
STANDARD 318F−05.
D
6
HE
1
5
4
2
3
E
b
e
C
A
0.05 (0.002)
q
L
A1
DIM
A
A1
b
c
D
E
e
L
HE
q
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.37
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 7:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
SOLDERING FOOTPRINT*
2.4
0.094
0.95
0.037
1.9
0.074
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
10
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NUD3160/D