NUD3124, SZNUD3124 Automotive Inductive Load Driver This micro−integrated part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a free−wheeling diode. It accepts logic level inputs, thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. http://onsemi.com MARKING DIAGRAMS Features 3 • Provides Robust Interface between D.C. Relay Coils and Sensitive • • • • • • 1 Logic Capable of Driving Relay Coils Rated up to 150 mA at 12 Volts Replaces 3 or 4 Discrete Components for Lower Cost Internal Zener Eliminates Need for Free−Wheeling Diode Meets Load Dump and other Automotive Specs SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices 2 JW6 MG G JW6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) SC−74 CASE 318F STYLE 7 6 1 JW6 MG G JW6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Typical Applications • Automotive and Industrial Environment • Drives Window, Latch, Door, and Antenna Relays ORDERING INFORMATION Benefits • • • • SOT−23 CASE 318 STYLE 21 Reduced PCB Space Standardized Driver for Wide Range of Relays Simplifies Circuit Design and PCB Layout Compliance with Automotive Specifications Package Shipping† NUD3124LT1G SOT−23 (Pb−Free) SZNUD3124LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel 3000 / Tape & Reel NUD3124DMT1G SC−74 (Pb−Free) 3000 / Tape & Reel SZNUD3124DMT1G SC−74 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. INTERNAL CIRCUIT DIAGRAMS Drain (3) Gate (1) Gate (2) 10 k 100 K 10 k 10 k Source (1) CASE 318 © Semiconductor Components Industries, LLC, 2012 Gate (5) 100 K 100 K Source (2) February, 2012 − Rev. 12 Drain (3) Drain (6) Source (4) CASE 318F 1 Publication Order Number: NUD3124/D NUD3124, SZNUD3124 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Rating Symbol Value Unit VDSS Drain−to−Source Voltage – Continuous (TJ = 125°C) 28 V VGSS Gate−to−Source Voltage – Continuous (TJ = 125°C) 12 V ID Drain Current – Continuous (TJ = 125°C) 150 mA EZ Single Pulse Drain−to−Source Avalanche Energy (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 250 mJ PPK Peak Power Dissipation, Drain−to−Source (Notes 1 and 2) (TJ Initial = 85°C) 20 W ELD1 Load Dump Suppressed Pulse, Drain−to−Source (Notes 3 and 4) (Suppressed Waveform: Vs = 45 V, RSOURCE = 0.5 W, T = 200 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 80 V ELD2 Inductive Switching Transient 1, Drain−to−Source (Waveform: RSOURCE = 10 W, T = 2.0 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 100 V ELD3 Inductive Switching Transient 2, Drain−to−Source (Waveform: RSOURCE = 4.0 W, T = 50 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 300 V Rev−Bat Reverse Battery, 10 Minutes (Drain−to−Source) (For Relay’s Coils/Inductive Loads of 80 W or more) −14 V Dual−Volt Dual Voltage Jump Start, 10 Minutes (Drain−to−Source) 28 V 2,000 V ESD Human Body Model (HBM) According to EIA/JESD22/A114 Specification Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current square pulse 1.0 ms duration. 2. For different square pulse durations, see Figure 2. 3. Nonrepetitive load dump suppressed pulse per Figure 3. 4. For relay’s coils/inductive loads higher than 80 W, see Figure 4. http://onsemi.com 2 NUD3124, SZNUD3124 THERMAL CHARACTERISTICS Symbol Rating Value Unit TA Operating Ambient Temperature −40 to 125 °C TJ Maximum Junction Temperature 150 °C −65 to 150 °C TSTG Storage Temperature Range PD Total Power Dissipation (Note 5) Derating above 25°C SOT−23 225 1.8 mW mW/°C PD Total Power Dissipation (Note 5) Derating above 25°C SC−74 380 3.0 mW mW/°C SOT−23 SC−74 556 329 °C/W RqJA Thermal Resistance Junction–to–Ambient (Note 5) 5. Mounted onto minimum pad board. http://onsemi.com 3 NUD3124, SZNUD3124 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Min Typ Max Unit VBRDSS 28 34 38 V − − − − − − − − 0.5 1.0 50 80 − − − − − − − − 60 80 90 110 1.3 1.3 1.8 − 2.0 2.0 − − − − − − − − 1.4 1.7 0.8 1.1 150 140 200 − − − gFS − 500 − mmho Input Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Ciss − 32 − pf Output Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Coss − 21 − pf Transfer Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Crss − 8.0 − pf tPHL tPLH − − 890 912 − − tPHL tPLH − − 324 1280 − − tf tr − − 2086 708 − − tf tr − − 556 725 − − Characteristic OFF CHARACTERISTICS Drain to Source Sustaining Voltage (ID = 10 mA) Drain to Source Leakage Current (VDS = 12 V, VGS = 0 V) (VDS = 12 V, VGS = 0 V, TJ = 125°C) (VDS = 28 V, VGS = 0 V) (VDS = 28 V, VGS = 0 V, TJ = 125°C) IDSS Gate Body Leakage Current (VGS = 3.0 V, VDS = 0 V) (VGS = 3.0 V, VDS = 0 V, TJ = 125°C) (VGS = 5.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V, TJ = 125°C) IGSS mA mA ON CHARACTERISTICS Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TJ = 125°C) VGS(th) Drain to Source On−Resistance (ID = 150 mA, VGS = 3.0 V) (ID = 150 mA, VGS = 3.0 V, TJ = 125°C) (ID = 150 mA, VGS = 5.0 V) (ID = 150 mA, VGS = 5.0 V, TJ = 125°C) RDS(on) Output Continuous Current (VDS = 0.25 V, VGS = 3.0 V) (VDS = 0.25 V, VGS = 3.0 V, TJ = 125°C) IDS(on) Forward Transconductance (VDS = 12 V, ID = 150 mA) V W mA DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS Propagation Delay Times: High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V) Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V) High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V) Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V) Transition Times: Fall Time; Figure 1, (VDS = 12 V, VGS = 3.0 V) Rise Time; Figure 1, (VDS = 12 V, VGS = 3.0 V) Fall Time; Figure 1, (VDS = 12 V, VGS = 5.0 V) Rise Time; Figure 1, (VDS = 12 V, VGS = 5.0 V) http://onsemi.com 4 ns ns NUD3124, SZNUD3124 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VIH Vin 50% 0V tPHL tPLH VOH 90% Vout 50% 10% VOL tr tf Figure 1. Switching Waveforms Ppk, PEAK SURGE POWER (W) 25 20 15 10 5 0 1 10 100 PW, PULSE WIDTH (ms) Figure 2. Maximum Non−repetitive Surge Power versus Pulse Width Load Dump Pulse Not Suppressed: VR = 13.5 V Nominal ±10% VS = 60 V Nominal ±10% T = 300 ms Nominal ±10% TR = 1 − 10 ms ±10% Load Dump Pulse Suppressed: NOTE: Max. Voltage DUT is exposed to is NOTE: approximately 45 V. VS = 30 V ±20% T = 150 ms ±20% TR 90% 10% of Peak; Reference = VR, IR 10% VR, IR Figure 3. Load Dump Waveform Definition http://onsemi.com 5 VS T NUD3124, SZNUD3124 14 IDSS, DRAIN LEAKAGE (mA) 140 VS, LOAD DUMP (VOLTS) 120 100 80 60 40 80 110 140 170 200 230 260 290 VDS = 28 V 8 6 4 2 −25 0 25 50 75 100 RELAY’S COIL (W) TJ, JUNCTION TEMPERATURE (°C) Figure 4. Load Dump Capability versus Relay’s Coil dc Resistance Figure 5. Drain−to−Source Leakage versus Junction Temperature 125 34.8 BVDSS BREAKDOWN VOLTAGE (V) 70 60 VGS = 5 V 50 40 VGS = 3 V 30 20 −50 1 −25 0 25 50 100 75 125 34.6 34.4 34.2 ID = 10 mA 34.0 33.8 33.6 33.4 −50 −25 25 0 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Gate−to−Source Leakage versus Junction Temperature Figure 7. Breakdown Voltage versus Junction Temperature 1 VGS = 5 V 0.1 0.01 VGS = 3 V VGS = 2.5 V ID DRAIN CURRENT (A) IGSS GATE LEAKAGE (mA) 10 0 −50 320 350 80 ID DRAIN CURRENT (A) 12 VGS = 2 V 1E−04 125 °C 0.01 0.001 85 °C 1E−04 1E−06 25 °C 1E−05 VGS = 1 V 1E−08 1E−10 0.0 VDS = 0.8 V −40 °C 1E−06 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1E−07 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 8. Output Characteristics Figure 9. Transfer Function http://onsemi.com 6 4.5 5.0 1800 ID = 0.25 A VGS = 3.0 V 1600 1400 1200 ID = 0.15 A VGS = 3.0 V 1000 800 ID = 0.15 A VGS = 5.0 V 600 400 −50 −25 0 25 50 100 75 125 TJ, JUNCTION TEMPERATURE (°C) Figure 10. On Resistance Variation versus Junction Temperature RDS(ON), DRAIN−TO−SOURCE RESISTANCE (W) RDS(ON), DRAIN−TO−SOURCE RESISTANCE (mW) NUD3124, SZNUD3124 0.20 0.18 ID = 250 mA 0.16 0.14 0.12 125 °C 0.10 85 °C 25 °C −40 °C 0.08 0.06 0.04 0.02 0.00 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 11. On Resistance Variation versus Gate−to−Source Voltage VZ ZENER CLAMP VOLTAGE (V) 36.0 35.5 35.0 34.5 34.0 −40 °C 25 °C 85 °C 33.5 33.0 125 °C 32.5 32.0 0.1 1.0 10 100 1000 IZ, ZENER CURRENT (mA) Figure 12. Zener Clamp Voltage versus Zener Current r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 Pd(pk) 0.02 0.01 0.01 0.001 0.01 PW t2 PERIOD DUTY CYCLE = t1/t2 SINGLE PULSE 0.1 t1 1.0 10 100 1000 10,000 t1, PULSE WIDTH (ms) Figure 13. Transient Thermal Response for NUD3124LT1G http://onsemi.com 7 100,000 1,000,000 NUD3124, SZNUD3124 APPLICATIONS INFORMATION 12 V Battery − + NC NO Relay, Vibrator, or Inductive Load Drain (3) Gate (1) Micro Processor Signal for Relay 10 k 100 K NUD3124 Source (2) Figure 14. Applications Diagram http://onsemi.com 8 NUD3124, SZNUD3124 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° NUD3124, SZNUD3124 PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05. D 6 HE 1 5 4 2 3 E b e 0.05 (0.002) q C A L A1 DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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