EMF18XV6T5 D

EMF18XV6T5
Dual Transistor Power Management
NPN/PNP Dual (Complementary)
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Features
• Low VCE(SAT), t0.5 V
• These are Pb−Free Devices
(3)
MAXIMUM RATINGS
(2)
R1
Q1
Q1
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−60
V
Collector −Base Voltage
VCBO
−50
V
Emitter −Base Voltage
VEBO
−6.0
V
IC
−100
mAdc
Symbol
Max
Unit
PD
357
(Note 1)
2.9
(Note 1)
mW
Collector Current
(1)
Q2
R2
(4)
(5)
(6)
Q2
Rating
Collector Current − Continuous
6
1
SOT−563
CASE 463A
PLASTIC
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
mW/°C
RqJA
350
(Note 1)
°C/W
Symbol
Max
Unit
PD
500
(Note1)
4.0
(Note 1)
mW
TA = 25°C
MARKING DIAGRAM
1
UV M G
G
Thermal Resistance,
Junction-to-Ambient
RqJA
250
(Note 1)
°C/W
UV = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C
ORDERING INFORMATION
Derate above 25°C
mW/°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
Package
Shipping†
EMF18XV6T5
SOT−563
(Pb−Free)
8000/Tape & Reel
EMF18XV6T5G
SOT−563
(Pb−Free)
8000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 2
1
Publication Order Number:
EMF18XV6/D
EMF18XV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C) (Note 2)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0)
IEBO
−
−
0.1
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
80
140
−
VCE(sat)
−
−
0.25
Vdc
Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
VOL
−
−
0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
−
−
Vdc
Input Resistor
R1
32.9
47
61.1
kW
Resistor Ratio
R1/R2
0.8
1.0
1.2
Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0)
V(BR)CBO
−60
−
−
Vdc
Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−50
−
−
Vdc
Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0)
V(BR)EBO
−6.0
−
−
Vdc
ICBO
−
−
−0.5
nA
Q1: NPN
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
Q2: PNP
Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0)
Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IB = 0)
Collector−Emitter Saturation Voltage (Note 4)
(IC = −50 mAdc, IB = −5.0 mAdc)
DC Current Gain (Note 4) (VCE = −6.0 Vdc, IC = −1.0 mAdc)
IEBO
−
−
−0.5
mA
VCE(sat)
−
−
−0.5
Vdc
hFE
120
−
560
−
fT
−
140
−
MHz
COB
−
3.5
−
pF
Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz)
Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz)
3. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
4. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
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2
EMF18XV6T5
10
1000
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — Q1, NPN
IC/IB = 10
1
25°C
TA=-25°C
75°C
0.1
VCE = 10 V
TA=75°C
25°C
-25°C
100
0.01
0
10
50
20
40
IC, COLLECTOR CURRENT (mA)
10
IC, COLLECTOR CURRENT (mA)
1
Figure 1. VCE(sat) versus IC
Figure 2. DC Current Gain
1
100
f = 1 MHz
IE = 0 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
0.4
TA=-25°C
10
1
0.1
0.01
0.2
0
25°C
75°C
0.6
0
VO = 5 V
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
Figure 3. Output Capacitance
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
Figure 4. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
0.8
100
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 5. Input Voltage versus Output Current
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3
50
10
EMF18XV6T5
TYPICAL ELECTRICAL CHARACTERISTICS − Q2, PNP
1000
VCE = 10 V
120
90
300 mA
250
200
60
150
IB = 50 mA
0
3
6
12
9
10
0.1
15
10
100
IC, COLLECTOR CURRENT (mA)
Figure 6. IC − VCE
Figure 7. DC Current Gain
900
TA = 25°C
800
COLLECTOR VOLTAGE (mV)
VCE , COLLECTOR‐EMITTER VOLTAGE (V)
1
VCE, COLLECTOR VOLTAGE (V)
2
1.5
1
0.5
700
600
500
400
300
TA = 25°C
VCE = 5 V
200
100
0
0.01
0.1
1
10
0
0.2
100
1
5
10
20
40
60
80
IC, COLLECTOR CURRENT (mA)
Figure 8. Collector Saturation Region
Figure 9. On Voltage
13
14
12
12
11
10
9
8
7
6
0.5
IB, BASE CURRENT (mA)
Cob, CAPACITANCE (pF)
Cib, INPUT CAPACITANCE (pF)
TA = - 25°C
100
100
30
0
TA = 25°C
TA = 75°C
DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
TA = 25°C
100
150 200
10
8
6
4
2
0
1
2
3
0
4
0
VEB (V)
10
20
30
VCB (V)
Figure 10. Capacitance
Figure 11. Capacitance
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4
40
EMF18XV6T5
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
D
−X−
6
1
e
A
5
4
2
3
L
E
−Y−
b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
HE
DIM
A
b
C
D
E
e
L
HE
C
5 PL
6
0.08 (0.003)
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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EMF18XV6/D
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