NGTB30N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. http://onsemi.com 30 A, 650 V VCEsat = 1.6 V Eoff = 0.2 mJ Features • • • • • • Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Losses in IH Cooker Application TJmax = 175°C Soft, Fast Free Wheeling Diode This is a Pb−Free Device C G Typical Applications • Inductive Heating • Soft Switching E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 650 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 120 A Gate−emitter voltage VGE $20 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C A 60 30 G C 120 A TO−247 CASE 340AL E A 60 30 MARKING DIAGRAM W 30N65IHL2 AYWWG 300 150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB30N65IHL2WG © Semiconductor Components Industries, LLC, 2014 June, 2014 − Rev. 0 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB30N65IHL2W/D NGTB30N65IHL2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.50 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.46 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 650 − − V VGE = 15 V, IC = 30 A VGE = 15 V, IC = 30 A, TJ = 175°C VCEsat − − 1.6 2.0 2.2 − V VGE = VCE, IC = 150 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 650 V VGE = 0 V, VCE = 650 V, TJ = 175°C ICES − − − − 0.2 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 100 nA Cies − 3200 − pF Coes − 130 − Cres − 85 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge nC Qg 135 Qge 26 Qgc 66 TJ = 25°C VCC = 400 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15V td(off) 145 tf 71 Eoff 0.2 mJ TJ = 150°C VCC = 400 V, IC = 30 A Rg = 10 W VGE = 0 V/ 15V td(off) 151 ns tf 94 Eoff 0.41 VGE = 0 V, IF = 30 A VGE = 0 V, IF = 30 A, TJ = 175°C VF 1.1 1.0 TJ = 25°C IF = 30 A, VR = 200 V diF/dt = 200 A/ms trr 430 ns Qrr 7700 nc Irrm 35 A VCE = 480 V, IC = 30 A, VGE = 15 V Gate to collector charge SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−off delay time Fall time Turn−off switching loss Turn−off delay time Fall time Turn−off switching loss ns mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current 1.3 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. http://onsemi.com 2 NGTB30N65IHL2WG TYPICAL CHARACTERISTICS 120 VGE = 20 V to 13 V TJ = 25°C 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 120 11 V 80 10 V 60 40 9V 20 8V 0 100 11 V 80 60 10 V 40 9V 8V 20 7V 7V 0 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) 0 8 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics TJ = −55°C VGE = 20 V to 13 V 11 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 8 120 120 100 80 10 V 60 40 9V 20 8V 0 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = 25°C 100 TJ = 150°C 80 60 40 20 0 0 8 Figure 3. Output Characteristics 2 4 8 12 6 10 VGE, GATE−EMITTER VOLTAGE (V) 14 Figure 4. Typical Transfer Characteristics 10000 3.00 Cies IC = 50 A 2.50 CAPACITANCE (pF) VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 V to 13 V TJ = 150°C IC = 40 A IC = 30 A 2.00 IC = 20 A 1.50 1000 TJ = 25°C 100 Coes 1.00 Cres 0.50 −75 −50 −25 0 25 50 75 100 125 150 175 200 10 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance http://onsemi.com 3 NGTB30N65IHL2WG TYPICAL CHARACTERISTICS 20 100 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 120 TJ = 25°C 80 TJ = 150°C 60 40 20 18 16 14 12 10 8 6 VCE = 400 V VGE = 15 V IC = 30 A 4 2 0 0 0 0.5 1.0 1.5 VF, FORWARD VOLTAGE (V) 0 2.0 20 Figure 7. Diode Forward Characteristics 60 80 100 120 QG, GATE CHARGE (nC) 160 1000 0.4 SWITCHING TIME (ns) VCE = 400 V VGE = 15 V IC = 30 A Rg = 10 W 0.5 0.3 Eoff 0.2 td(off) 100 tf VCE = 400 V VGE = 15 V IC = 30 A Rg = 10 W 0.1 0 10 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 1000 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 1.4 1.2 SWITCHING TIME (ns) 1.6 SWITCHING LOSS (mJ) 140 Figure 8. Typical Gate Charge 0.6 SWITCHING LOSS (mJ) 40 Eoff 1.0 0.8 0.6 0.4 td(off) tf 100 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 0.2 0 10 4 14 24 34 44 54 64 74 4 84 IC, COLLECTOR CURRENT (A) 14 24 34 44 54 64 IC, COLLECTOR CURRENT (A) Figure 12. Switching Time vs. IC Figure 11. Switching Loss vs. IC http://onsemi.com 4 74 160 NGTB30N65IHL2WG TYPICAL CHARACTERISTICS 1000 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 1.0 0.5 Eoff VCE = 400 V VGE = 15 V IC = 30 A TJ = 150°C 0 td(off) 100 tf VCE = 400 V VGE = 15 V IC = 30 A TJ = 150°C 10 5 15 25 35 45 55 65 75 5 85 15 25 35 45 55 65 RG, GATE RESISTOR (W) RG, GATE RESISTOR (W) Figure 13. Switching Loss vs. RG Figure 14. Switching Time vs. RG 0.50 75 85 1000 0.40 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 0.45 0.35 0.30 Eoff 0.25 0.20 Rg = 10 W VGE = 15 V IC = 30 A TJ = 150°C 0.15 0.10 0.05 0 100 tf Rg = 10 W VGE = 15 V IC = 30 A TJ = 150°C 10 175 225 275 325 375 425 475 525 175 575 225 275 325 375 425 475 525 575 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 50 ms 100 IC, COLLECTOR CURRENT (A) 1000 IC, COLLECTOR CURRENT (A) td(off) 100 ms dc operation 10 1 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 10 10 VGE = 15 V, TC = 150°C 1 0.1 1 100 100 1000 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area http://onsemi.com 5 NGTB30N65IHL2WG TYPICAL CHARACTERISTICS 1 50% Duty Cycle R(t) (°C/W) 0.1 0.01 RqJC = 0.50 20% 10% 5% Junction R1 2% R2 Rn C2 Cn Case Ci = ti/Ri C1 0.001 Single Pulse Ri (°C/W) Ci (J/W) 0.064185 0.060802 0.050673 0.170671 0.142159 0.009510 0.000004 0.001558 0.005201 0.019734 0.018529 0.070344 3.325233 26863.47 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 19. IGBT Transient Thermal Impedance 10 R(t) (°C/W) RqJC = 1.46 1 50% Duty Cycle 20% 0.1 Junction R1 10% 5% 2% Rn C2 Cn Case Ci = ti/Ri C1 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.01 0.000001 R2 0.00001 0.0001 0.001 0.01 PULSE TIME (sec) Figure 20. Diode Transient Thermal Impedance http://onsemi.com 6 0.1 Ri (°C/W) Ci (J/W) 0.026867 0.000237 0.034915 0.039625 0.087617 0.161215 0.336873 0.265205 0.361515 0.148056 0.000037 0.013344 0.000286 0.000798 0.001141 0.001962 0.002968 0.011924 0.027661 0.213586 1 NGTB30N65IHL2WG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE A B A NOTE 4 E SEATING PLANE 0.635 M B A P A E2/2 Q E2 NOTE 4 D S NOTE 3 1 2 4 DIM A A1 b b2 b4 c D E E2 e L L1 P Q S 3 L1 NOTE 5 L 2X b2 c b4 3X e A1 b 0.25 NOTE 7 M B A M NOTE 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.30 21.40 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.50 4.50 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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