2N7002K D

2N7002K, 2V7002K
Small Signal MOSFET
60 V, 380 mA, Single, N−Channel, SOT−23
Features
•
•
•
•
•
ESD Protected
Low RDS(on)
Surface Mount Package
2V Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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ID MAX
1.6 W @ 10 V
60 V
380 mA
2.5 W @ 4.5 V
SIMPLIFIED SCHEMATIC
Applications
•
•
•
•
RDS(on) MAX
V(BR)DSS
Low Side Load Switch
Level Shift Circuits
DC−DC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
Gate
1
3
Drain
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
Drain Current (Note 1)
Steady State 1 sq in Pad
Drain Current (Note 2)
Steady State Minimum Pad
(Top View)
ID
TA = 25°C
TA = 85°C
mA
380
270
3
Power Dissipation
Steady State 1 sq in Pad
Steady State Minimum Pad
mA
320
230
3
1
2
PD
mW
420
300
Pulsed Drain Current (tp = 10 ms)
IDM
1.5
A
Operating Junction and Storage
Temperature Range
TJ, TSTG
−55 to
+150
°C
Source Current (Body Diode)
IS
300
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
ESD
2000
V
Gate−Source ESD Rating
(HBM, Method 3015)
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
ID
TA = 25°C
TA = 85°C
2
Source
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.
2. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.
SOT−23
CASE 318
STYLE 21
704 MG
G
1
2
Gate
Source
704
= Specific Device Code*
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Specific Device Code, Date Code or overbar
orientation and/or location may vary depending upon manufacturing location. This is a
representation only and actual devices may
not match this drawing exactly.
ORDERING INFORMATION
Package
Shipping†
2N7002KT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
2V7002KT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 13
1
Publication Order Number:
2N7002K/D
2N7002K, 2V7002K
THERMAL CHARACTERISTICS
Characteristic
Junction−to−Ambient − Steady State (Note 3)
Symbol
Max
Unit
RqJA
300
°C/W
Junction−to−Ambient − t ≤ 5 s (Note 3)
92
Junction−to−Ambient − Steady State (Note 4)
417
Junction−to−Ambient − t ≤ 5 s (Note 4)
154
3. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.
4. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
71
VGS = 0 V,
VDS = 60 V
VGS = 0 V,
VDS = 50 V
Gate−to−Source Leakage Current
IGSS
V
mV/°C
TJ = 25°C
1
TJ = 125°C
10
TJ = 25°C
100
mA
nA
VDS = 0 V, VGS = ±20 V
±10
mA
VDS = 0 V, VGS = ±10 V
450
nA
VDS = 0 V, VGS = ±5.0 V
150
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(TH)
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
VGS = VDS, ID = 250 mA
1.0
2.3
4.0
V
mV/°C
VGS = 10 V, ID = 500 mA
1.19
1.6
VGS = 4.5 V, ID = 200 mA
1.33
2.5
VDS = 5 V, ID = 200 mA
530
W
mS
CHARGES AND CAPACITANCES
CISS
Input Capacitance
VGS = 0 V, f = 1 MHz,
VDS = 20 V
24.5
45
Output Capacitance
COSS
4.2
8.0
Reverse Transfer Capacitance
CRSS
2.2
5.0
Total Gate Charge
QG(TOT)
0.7
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
VGS = 4.5 V, VDS = 10 V;
ID = 200 mA
pF
nC
0.1
0.3
0.1
SWITCHING CHARACTERISTICS, VGS = V (Note 6)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
Fall Time
ns
12.2
VGS = 10 V, VDD = 25 V,
ID = 500 mA, RG = 25 W
tf
9.0
55.8
29
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 200 mA
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures
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2
TJ = 25°C
0.8
TJ = 85°C
0.7
1.2
V
2N7002K, 2V7002K
TYPICAL CHARACTERISTICS
9.0 V
8.0 V
7.0 V
6.0 V
1.2
1.2
5.0 V
4.5 V
VGS = 10 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1.6
4.0 V
3.5 V
0.8
3.0 V
0.4
0.8
TJ = 25°C
0.4
2.5 V
0
2
4
6
0
4
6
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
VGS = 4.5 V
TJ = 125°C
2.4
TJ = 85°C
TJ = 25°C
2.0
1.6
TJ = −55°C
1.2
0.8
0.4
0
0
2
VGS, GATE−TO−SOURCE VOLTAGE (V)
3.2
2.8
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
3.2
VGS = 10 V
2.8
2.4
TJ = 125°C
2.0
TJ = 85°C
1.6
TJ = 25°C
1.2
TJ = −55°C
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Temperature
2.4
2.2
ID = 0.2 A
2.0
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 125°C
0
ID = 500 mA
1.6
ID = 200 mA
1.2
0.8
4
6
8
VGS = 4.5 V
10
VGS = 10 V
1.4
1.0
0.6
−50
0.4
2
1.8
−25
0
25
50
75
100
125
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance vs. Gate−to−Source
Voltage
Figure 6. On−Resistance Variation with
Temperature
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3
150
2N7002K, 2V7002K
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
30
C, CAPACITANCE (pF)
Ciss
20
TJ = 25°C
VGS = 0 V
Coss
10
Crss
0
0
4
8
12
16
TJ = 25°C
ID = 0.2 A
4
3
2
1
0
0
20
0.2
0.4
0.6
0.8
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VGS(TH), THRESHOLD VOLTAGE (V)
10
VGS = 0 V
IS, SOURCE CURRENT (A)
5
1
TJ = 85°C
TJ = 25°C
0.1
0.01
0.4
0.6
0.8
1.0
1.2
2.5
2.4 ID = 250 mA
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
−50 −25
0
25
50
75
100
125
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Threshold Voltage with
Temperature
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4
150
2N7002K, 2V7002K
TYPICAL CHARACTERISTICS
RqJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1000
Duty Cycle = 0.5
100
10
0.2
0.1
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
10
100
1000
t, PULSE TIME (s)
Figure 11. Thermal Response − 1 sq in pad
RqJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1000
Duty Cycle = 0.5
100
10
0.2
0.1
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 12. Thermal Response − minimum pad
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5
2N7002K, 2V7002K
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
b
0.25
e
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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2N7002K/D
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