2SK3703 D

Ordering number : EN7681B
2SK3703
N-Channel Power MOSFET
60V, 30A, 26mΩ, TO-220F-3SG
http://onsemi.com
Features
•
•
ON-resistance RDS(on)1=20mΩ (typ.)
4V drive
•
Input capacitance Ciss=1780pF (typ.)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
60
ID
IDP
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
V
±20
V
30
A
120
A
2.0
W
Allowable Power Dissipation
PD
25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
135
mJ
30
A
Avalanche Current *2
Tc=25°C
Note : *1 VDD=20V, L=200μH, IAV=30A (Fig.1)
*2 L≤200μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7529-001
• Package
: TO-220F-3SG
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
15.87
6.68
3.3
2.54
A
3.23
15.8
2SK3703-1E
4.7
10.16
3.18
K3703
1
LOT No.
12.98
2.76
1.47 MAX
DETAIL-A
0.8
1
2
3
0.5
FRAME
2.54
2.54
Semiconductor Components Industries, LLC, 2013
July, 2013
( 1.0)
EMC
3
(0.84)
1 : Gate
2 : Drain
3 : Source
TO-220F-3SG
51612 TKIM TC-00002747/72506QA MSIM TC-00000067/61504 TSIM TA-100813 No.7681-1/7
2SK3703
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=15A, VGS=4V
Output Capacitance
Coss
Reverse Transfer Capacitance
typ
Unit
max
60
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
RDS(on)1
Ciss
min
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VDS=10V, ID=15A
ID=15A, VGS=10V
Input Capacitance
Ratings
Conditions
V
1
μA
±10
μA
1.2
2.6
13
22
V
S
20
26
mΩ
28
40
mΩ
1780
pF
266
pF
Crss
197
pF
Turn-ON Delay Time
td(on)
16.5
ns
Rise Time
tr
td(off)
110
ns
166
ns
Turn-OFF Delay Time
Fall Time
VDS=20V, f=1MHz
See Fig.2
tf
Qg
Total Gate Charge
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=30V, VGS=10V, ID=30A
IS=30A, VGS=0V
Fig.1 Avalanche Resistance Test Circuit
nC
6.5
nC
11.5
nC
1.0
1.2
V
VDD=30V
VIN
10V
0V
≥50Ω
ID=15A
RL=2Ω
VIN
D
2SK3703
VDD
50Ω
ns
40
Fig.2 Switching Time Test Circuit
L
10V
0V
144
VOUT
PW=10μs
D.C.≤1%
G
2SK3703
P.G
50Ω
S
Ordering Information
Device
2SK3703-1E
Package
Shipping
memo
TO-220F-3SG
50pcs./magazine
Pb Free
No.7681-2/7
2SK3703
35
30
25
20
15
VGS=3V
25
20
15
5
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
Static-Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
60
50
40
Tc=75°C
25°C
--25°C
20
10
0
2
3
4
5
6
7
8
9
Gate-to-Source Voltage, VGS -- V
5
Source Current, IS -- A
C
25°
C
°
-25
=C
Tc
75°
7
5
3
2
3.5
4.0
4.5
5.0
IT05387
,
15A
I D=
30
=4V
V GS
V
10
S=
VG
5A,
1
I D=
20
10
--25
0
25
50
75
100
125
150
IT05389
IS -- VSD
VGS=0V
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
1.0
7
5
0.1
3.0
Case Temperature, Tc -- °C
7
10
40
5
3
2
2
2.5
50
0
--50
10
3
2.0
RDS(on) -- Tc
IT05388
| yfs | -- ID
100
1.5
60
ID=15A
30
1.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
70
0.5
IT05386
5°C
25°
C
--25°
C
0.4
Tc=
7
0.2
25
°C
5
0
Drain-to-Source Voltage, VDS -- V
Static-Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
30
10
0
Forward Transfer Admittance, | yfs | -- S
35
Tc=
75
--25 °C
°C
Drain Current, ID -- A
8V
40
10
2
3
5
7 1.0
2
3
5
7 10
2
Drain Current, ID -- A
3
5
0
Ciss, Coss, Crss -- pF
7
5
tr
3
2
1.2
IT05391
f=1MHz
Ciss
2
tf
100
0.9
3
td(off)
2
0.6
Ciss, Coss, Crss -- VDS
5
VDD=30V
VGS=10V
3
0.3
Diode Forward Voltage, VSD -- V
IT05390
SW Time -- ID
5
Switching Time, SW Time -- ns
Tc=
--25
°C
75°
C
45
4V
40
Drain Current, ID -- A
VDS=10V
6V
V
10
45
ID -- VGS
50
Tc=25°C
25°
C
ID -- VDS
50
1000
7
5
Coss
Crss
3
2
td(on)
100
10
0.1
7
2
3
5
7 1.0
2
3
5
7 10
Drain Current, ID -- A
2
3
5
IT05392
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT05393
No.7681-3/7
2SK3703
VGS -- Qg
10
9
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
1000
7
5
3
2
VDS=30V
ID=30A
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
Total Gate Charge, Qg -- nC
40
Operatuon in this
area is limited by RDS(on).
1.5
1.0
0.5
op
Tc=25°C
Single pulse
2
3
5 7 1.0
2
3
5 7 10
2
3
5 7 100
IT16832
PD -- Tc
35
2.0
1
10 0ms
0m
era s
tio
n
s
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
1.0
7
5
3
2
0μ
s
1m
DC
10
7
5
3
2
10
μs
10
ID=30A
IT05394
0
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT05397
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT05396
EAS -- Ta
120
Avalanche Energy derating factor -- %
IDP=120A(PW≤10μs)
100
7
5
3
2
0.1
0.1
PD -- Ta
2.5
ASO
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No.7681-4/7
2SK3703
Magazine Specification
2SK3703-1E
No.7681-5/7
2SK3703
Outline Drawing
2SK3703-1E
Mass (g) Unit
1.8
mm
* For reference
No.7681-6/7
2SK3703
Note on usage : Since the 2SK3703 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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No.7681-7/7
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