BFL4004 D

Ordering number : ENA1796A
BFL4004
N-Channel Power MOSFET
http://onsemi.com
800V, 6.5A, 2.5Ω, TO-220F-3FS
Features
•
•
ON-resistance RDS(on)=1.9Ω (typ.)
Input capacitance Ciss=710pF (typ.)
10V drive
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Unit
800
V
±30
V
A
IDc*1
Limited only by maximum temperature Tch=150°C
6.5
IDpack*2
Tc=25°C (Our ideal heat dissipation condition)*3
4.3
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
13
A
Allowable Power Dissipation
PD
2.0
W
Channel Temperature
Drain Current (DC)
36
W
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
IAV
225
mJ
6.5
A
Avalanche Current *5
Tc=25°C (Our ideal heat dissipation condition)*3
Note : *1 Shows chip capability
*2 Package limited
*3 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=10mH, IAV=6.5A (Fig.1)
*5 L≤10mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7528-001
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./tube
4.7
10.16
3.18
BFL4004-1E
Marking
Electrical Connection
2
FL4004
3.23
15.8
15.87
6.68
3.3
2.54
LOT No.
1
12.98
2.76
1.47 MAX
3
0.8
1
2.54
2
3
0.5
2.54
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
TO-220F-3FS
D0512 TKIM TC-00002842/70710QB TKIM TC-00002398 No. A1796-1/7
BFL4004
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
ID=10mA, VGS=0V
VDS=640V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
| yfs |
VDS=10V, ID=1mA
VDS=20V, ID=3.25A
Static Drain-to-Source On-State Resistance
RDS(on)
ID=3.25A, VGS=10V
Input Capacitance
Ciss
min
typ
Unit
max
800
V
1.0
mA
±100
nA
2.0
4.0
1.7
3.4
V
S
1.9
2.5
Ω
710
pF
Output Capacitance
Coss
120
pF
Reverse Transfer Capacitance
Crss
42
pF
Turn-ON Delay Time
td(on)
tr
17
ns
44
ns
130
ns
Rise Time
Turn-OFF Delay Time
Fall Time
td(off)
tf
Total Gate Charge
Qg
VDS=30V, f=1MHz
See Fig.2
44
ns
36
nC
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
IS=6.5A, VGS=0V
0.85
Reverse Recovery Time
trr
See Fig.3
970
ns
Reverse Recovery Charge
Qrr
IS=6.5A, VGS=0V, di/dt=100A/μs
6700
nC
VDS=200V, VGS=10V, ID=6.5A
Fig.1 Unclamped Inductive Switching Test Circuit
D
≥50Ω
RG
nC
18
nC
VIN
ID=3.25A
RL=59Ω
D
VOUT
PW≤10μs
D.C.≤1%
VDD
50Ω
V
VDD=200V
VIN
G
S
10V
0V
1.2
Fig.2 Switching Time Test Circuit
10V
0V
L
6.2
G
BFL4004
S
P.G
BFL4004
50Ω
Fig.3 Reverse Recovery Time Test Circuit
BFL4004
D
500μH
G
S
VDD=50V
Driver MOSFET
Ordering Information
Device
BFL4004-1E
Package
Shipping
memo
TO-220F-3FS
50pcs./tube
Pb Free
No. A1796-2/7
BFL4004
ID -- VDS
VDS=20V
15V
8
7V
6
6V
4
2
VGS=4V
10
15
20
25
30
35
40
45
Drain-to-Source Voltage, VDS -- V
0
50
Tc=75°C
3
2
25°C
--25°C
1
4
5
6
7
8
9
10
11
12
13
Gate-to-Source Voltage, VGS -- V
14
°C
25
C
5°
--2
°C
=
75
Tc
1.0
7
5
3
2
0.1
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
SW Time -- ID
7
6
5
4
A
.25
=3
, ID
0V
3
=1
S
VG
2
1
--25
0
25
50
75
100
125
150
IT15752
IS -- VSD
VGS=0V
Single pulse
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
0.01
0.2
5 7 10
IT15753
100
7
tf
5
3
tr
2
td(on)
0.8
1.0
1.2
IT15754
f=1MHz
3
2
Ciss, Coss, Crss -- pF
td (off)
0.6
Ciss, Coss, Crss -- VDS
5
3
2
0.4
Diode Forward Voltage, VSD -- V
VDD=200V
VGS=10V
5
1000
7
5
Ciss
3
Cos
2
s
100
7
5
Cr
ss
3
2
10
7
0.1
12
IT15750
3
2
7
5
0.01
10
Single pulse
3
2
2
8
Case Temperature, Tc -- °C
VDS=20V
3
6
RDS(on) -- Tc
0
--50
15
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
5
4
IT15751
| yfs | -- ID
7
Switching Time, SW Time -- ns
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
4
3
2
7
5
2
0
Gate-to-Source Voltage, VGS -- V
ID=3.25A
Single pulse
0
4
IT15749
RDS(on) -- VGS
6
75°C
6
Tc=
75°
C
5
25°C
8
2
5V
0
Tc= --25°C
10
--25
°C
10V
25°C
10
0
ID -- VGS
12
Tc=25°C
Drain Current, ID -- A
Drain Current, ID -- A
12
2
3
5
7
1.0
2
3
Drain Current, ID -- A
5
7
2
10
IT15755
10
0
5
10
15
20
25
30
35
40
Drain-to-Source Voltage, VDS -- V
45
50
IT15756
No. A1796-3/7
BFL4004
VGS -- Qg
10
Drain Current, ID -- A
6
5
4
3
1
3
2
5
10
15
20
25
30
35
Total Gate Charge, Qg -- nC
1.0
0.5
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT15759
EAS -- Ta
120
5 7 1.0
2 3
5 7 10
2 3
5 7100
2 3
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
1.5
0
2 3
PD -- Tc
40
2.0
0
*1. Shows chip capability
*2. Our ideal heat dissipation condition
Tc=25°C
Single pulse
0.01
0.1
40
s
Operation in
this area is
limited by RDS(on).
IT15757
PD -- Ta
2.5
Allowable Power Dissipation, PD -- W
3
2
2
0
1m
IDpack(*2)=4.3A
1.0
7
5
0.1
7
5
0
Avalanche Energy derating factor -- %
3
2
μs
s
0μ
7
10
IDc(*1)=6.5A
10
8
IDP=13A(PW≤10μs)
10
7
5
s
m s
n
10
io
0m at
10 per
o
DC
Gate-to-Source Voltage, VGS -- V
9
ASO
3
2
VDS=200V
ID=6.5A
5 71000 2
IT15758
36
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT15760
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A1796-4/7
BFL4004
Magazine Specification
BFL4004-1E
No. A1796-5/7
BFL4004
Outline Drawing
BFL4004-1E
Mass (g) Unit
1.8
mm
* For reference
No. A1796-6/7
BFL4004
Note on usage : Since the BFL4004 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1796-7/7
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