Ordering number : ENA1796A BFL4004 N-Channel Power MOSFET http://onsemi.com 800V, 6.5A, 2.5Ω, TO-220F-3FS Features • • ON-resistance RDS(on)=1.9Ω (typ.) Input capacitance Ciss=710pF (typ.) 10V drive • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Unit 800 V ±30 V A IDc*1 Limited only by maximum temperature Tch=150°C 6.5 IDpack*2 Tc=25°C (Our ideal heat dissipation condition)*3 4.3 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 13 A Allowable Power Dissipation PD 2.0 W Channel Temperature Drain Current (DC) 36 W Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS IAV 225 mJ 6.5 A Avalanche Current *5 Tc=25°C (Our ideal heat dissipation condition)*3 Note : *1 Shows chip capability *2 Package limited *3 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=10mH, IAV=6.5A (Fig.1) *5 L≤10mH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7528-001 • Package : TO-220F-3FS • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./tube 4.7 10.16 3.18 BFL4004-1E Marking Electrical Connection 2 FL4004 3.23 15.8 15.87 6.68 3.3 2.54 LOT No. 1 12.98 2.76 1.47 MAX 3 0.8 1 2.54 2 3 0.5 2.54 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source TO-220F-3FS D0512 TKIM TC-00002842/70710QB TKIM TC-00002398 No. A1796-1/7 BFL4004 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=10mA, VGS=0V VDS=640V, VGS=0V Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | VDS=10V, ID=1mA VDS=20V, ID=3.25A Static Drain-to-Source On-State Resistance RDS(on) ID=3.25A, VGS=10V Input Capacitance Ciss min typ Unit max 800 V 1.0 mA ±100 nA 2.0 4.0 1.7 3.4 V S 1.9 2.5 Ω 710 pF Output Capacitance Coss 120 pF Reverse Transfer Capacitance Crss 42 pF Turn-ON Delay Time td(on) tr 17 ns 44 ns 130 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg VDS=30V, f=1MHz See Fig.2 44 ns 36 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=6.5A, VGS=0V 0.85 Reverse Recovery Time trr See Fig.3 970 ns Reverse Recovery Charge Qrr IS=6.5A, VGS=0V, di/dt=100A/μs 6700 nC VDS=200V, VGS=10V, ID=6.5A Fig.1 Unclamped Inductive Switching Test Circuit D ≥50Ω RG nC 18 nC VIN ID=3.25A RL=59Ω D VOUT PW≤10μs D.C.≤1% VDD 50Ω V VDD=200V VIN G S 10V 0V 1.2 Fig.2 Switching Time Test Circuit 10V 0V L 6.2 G BFL4004 S P.G BFL4004 50Ω Fig.3 Reverse Recovery Time Test Circuit BFL4004 D 500μH G S VDD=50V Driver MOSFET Ordering Information Device BFL4004-1E Package Shipping memo TO-220F-3FS 50pcs./tube Pb Free No. A1796-2/7 BFL4004 ID -- VDS VDS=20V 15V 8 7V 6 6V 4 2 VGS=4V 10 15 20 25 30 35 40 45 Drain-to-Source Voltage, VDS -- V 0 50 Tc=75°C 3 2 25°C --25°C 1 4 5 6 7 8 9 10 11 12 13 Gate-to-Source Voltage, VGS -- V 14 °C 25 C 5° --2 °C = 75 Tc 1.0 7 5 3 2 0.1 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A SW Time -- ID 7 6 5 4 A .25 =3 , ID 0V 3 =1 S VG 2 1 --25 0 25 50 75 100 125 150 IT15752 IS -- VSD VGS=0V Single pulse 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 0.01 0.2 5 7 10 IT15753 100 7 tf 5 3 tr 2 td(on) 0.8 1.0 1.2 IT15754 f=1MHz 3 2 Ciss, Coss, Crss -- pF td (off) 0.6 Ciss, Coss, Crss -- VDS 5 3 2 0.4 Diode Forward Voltage, VSD -- V VDD=200V VGS=10V 5 1000 7 5 Ciss 3 Cos 2 s 100 7 5 Cr ss 3 2 10 7 0.1 12 IT15750 3 2 7 5 0.01 10 Single pulse 3 2 2 8 Case Temperature, Tc -- °C VDS=20V 3 6 RDS(on) -- Tc 0 --50 15 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 4 IT15751 | yfs | -- ID 7 Switching Time, SW Time -- ns Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 4 3 2 7 5 2 0 Gate-to-Source Voltage, VGS -- V ID=3.25A Single pulse 0 4 IT15749 RDS(on) -- VGS 6 75°C 6 Tc= 75° C 5 25°C 8 2 5V 0 Tc= --25°C 10 --25 °C 10V 25°C 10 0 ID -- VGS 12 Tc=25°C Drain Current, ID -- A Drain Current, ID -- A 12 2 3 5 7 1.0 2 3 Drain Current, ID -- A 5 7 2 10 IT15755 10 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT15756 No. A1796-3/7 BFL4004 VGS -- Qg 10 Drain Current, ID -- A 6 5 4 3 1 3 2 5 10 15 20 25 30 35 Total Gate Charge, Qg -- nC 1.0 0.5 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT15759 EAS -- Ta 120 5 7 1.0 2 3 5 7 10 2 3 5 7100 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 1.5 0 2 3 PD -- Tc 40 2.0 0 *1. Shows chip capability *2. Our ideal heat dissipation condition Tc=25°C Single pulse 0.01 0.1 40 s Operation in this area is limited by RDS(on). IT15757 PD -- Ta 2.5 Allowable Power Dissipation, PD -- W 3 2 2 0 1m IDpack(*2)=4.3A 1.0 7 5 0.1 7 5 0 Avalanche Energy derating factor -- % 3 2 μs s 0μ 7 10 IDc(*1)=6.5A 10 8 IDP=13A(PW≤10μs) 10 7 5 s m s n 10 io 0m at 10 per o DC Gate-to-Source Voltage, VGS -- V 9 ASO 3 2 VDS=200V ID=6.5A 5 71000 2 IT15758 36 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT15760 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1796-4/7 BFL4004 Magazine Specification BFL4004-1E No. A1796-5/7 BFL4004 Outline Drawing BFL4004-1E Mass (g) Unit 1.8 mm * For reference No. A1796-6/7 BFL4004 Note on usage : Since the BFL4004 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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