ENA0151 D

Ordering number : ENA0151B
CPH3350
P-Channel Power MOSFET
http://onsemi.com
–20V, –3A, 83mΩ, Single CPH3
Features
•
•
•
•
Ultrahigh-speed switching
1.8V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
PD
Tch
Storage Temperature
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm)
--20
V
±10
V
--3
A
--12
A
1.0
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7015A-004
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
0.6
2.9
CPH3350-TL-H
CPH3350-TL-W
0.15
Packing Type: TL
LOT No.
WG
0.2
0.05
1.6
2.8
Marking
3
0.9
0.2
0.6
TL
1
2
0.95
0.4
1 : Gate
2 : Source
3 : Drain
Electrical Connection
3
CPH3
1
2
Semiconductor Components Industries, LLC, 2013
October, 2013
O0913 TKIM TC-00002895/60612 TKIM/D1411PE TKIM TC-00002683 No. A0151-1/6
CPH3350
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Conditions
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
Ratings
min
typ
Unit
max
--20
V
--1
μA
±10
μA
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--1.5A
4.3
RDS(on)1
ID=--1.5A, VGS=--4.5V
64
83
mΩ
RDS(on)2
ID=--1A, VGS=--2.5V
89
124
mΩ
RDS(on)3
ID=--0.2A, VGS=--1.8V
131
196
mΩ
Static Drain-to-Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
--0.4
--1.3
V
S
375
pF
77
pF
Crss
58
pF
Turn-ON Delay Time
td(on)
8.1
ns
Rise Time
tr
26
ns
Turn-OFF Delay Time
td(off)
42
ns
Fall Time
tf
37
ns
Total Gate Charge
Qg
4.6
nC
0.8
nC
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--10V, VGS=--4.5V, ID=--3A
1.3
IS=--3A, VGS=0V
--0.83
nC
--1.2
V
Switching Time Test Circuit
VIN
VDD= --10V
0V
--4.5V
ID= --1.5A
RL=6.67Ω
VIN
D
VOUT
PW=10μs
D.C.≤1%
G
CPH3350
P.G
50Ω
S
Ordering Information
Device
CPH3350-TL-H
CPH3350-TL-W
Package
Shipping
memo
CPH3
3,000pcs./reel
Pb Free and Halogen Free
No. A0151-2/6
CPH3350
ID -- VDS
VDS= --10V
--1
.8V
--4.5V
--1.5
--1.0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
Drain-to-Source Voltage, VDS -- V
0
0
--1.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
250
200
ID= --0.2A
--1.0A
--1.5A
50
--1
--2
--3
--4
--5
--6
--7
Gate-to-Source Voltage, VGS -- V
3
C
5°
-2
=Ta
75
1.0
°C
°C
25
7
5
--20
0
20
40
60
80
100
120
2
140
160
IT13011
IS -- VSD
VGS=0V
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
3
0.1
--0.01
50
--10
7
5
3
2
5
2
100
Ambient Temperature, Ta -- °C
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
--8
VDS= --10V
7
--2.5
IT13009
2A
= --0.
8V, I D
.
1
-=
VGS
--1.0A
, I D=
V
.5
2
-V GS=
--1.5A
V, I D=
.5
4
-V GS=
150
IT13010
| yfs | -- ID
10
--2.0
200
0
--60 --40
0
0
--1.5
RDS(on) -- Ta
250
Ta=25°C
100
--1.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
300
--0.5
IT13008
Ta=7
5°C
25°C
--25°
C
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
25°C
VGS= --1.0V
0
--0.001
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
0
5 7 --10
IT13012
Drain Current, ID -- A
--0.2
--0.4
--0.6
f=1MHz
5
Ciss, Coss, Crss -- pF
td (off)
tf
3
2
tr
--1.2
IT13013
7
100
5
--1.0
Ciss, Coss, Crss -- VDS
1000
VDD= --10V
VGS= --4V
7
--0.8
Diode Forward Voltage, VSD -- V
SW Time -- ID
2
Switching Time, SW Time -- ns
--2
--1
--0.5
150
--3
C
--25°
C
--1.5V
Ta=7
5°
Drain Current, ID -- A
V
--3.
0
--2.0
ID -- VGS
--5
--4
--8.0V
--2.5
Drain Current, ID -- A
--2.
5V
--3.0
Ciss
3
2
100
Coss
Crss
7
5
10
td(on)
3
7
5
--0.1
2
2
3
5
7
--1.0
2
Drain Current, ID -- A
3
5
7
--10
IT13014
0
--2
--4
--6
--8
--10
--12
--14
--16
Drain-to-Source Voltage, VDS -- V
--18
--20
IT13015
No. A0151-3/6
CPH3350
--100
7
5
3
2
VDS= --10V
ID= --3A
--4.0
--3.5
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
ASO
VGS -- Qg
--4.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
1
2
3
4
Total Gate Charge, Qg -- nC
IT13016
PD -- Ta
1.2
Allowable Power Dissipation, PD -- W
5
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
IDP= --12A (PW≤10μs)
10m
s
10
0m
s
ID= --3A
100
μs
1m
s
DC
op
era
tio
n
Operation in this area
is limited by RDS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
--0.01
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Drain-to-Source Voltage, VDS -- V
5 7 --100
IT16676
When mounted on ceramic substrate
(900mm2×0.8mm)
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13018
No. A0151-4/6
CPH3350
Outline Drawing
CPH3350-TL-H, CPH3350-TL-W
Land Pattern Example
Mass (g) Unit
0.013 mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No. A0151-5/6
CPH3350
Note on usage : Since the CPH3350 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No. A0151-6/6
Similar pages