2N6394 D

2N6394 Series
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies.
Features
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• Glass Passivated Junctions with Center Gate Geometry for Greater
•
•
•
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 V
These are Pb−Free Devices
SCRs
12 AMPERES RMS
50 thru 800 VOLTS
G
MAXIMUM RATINGS † (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
2N6394
2N6395
2N6397
2N6399
VDRM,
VRRM
On-State RMS Current
(180° Conduction Angles; TC = 90°C)
IT(RMS)
12
A
ITSM
100
A
I2t
40
A2s
PGM
20
W
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = 90°C)
Circuit Fusing (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width ≤ 1.0 ms, TC = 90°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 90°C)
Value
A
Unit
V
MARKING
DIAGRAM
50
100
400
800
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 ms, TC = 90°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
−40 to +125
°C
Storage Temperature Range
Tstg
−40 to +150
°C
4
TO−220AB
CASE 221A
STYLE 3
1
2
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 10 Seconds
Symbol
Max
Unit
RqJC
2.0
°C/W
TL
260
°C
†Indicates JEDEC Registered Data
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 9
1
2N639xG
AYWW
3
2N639x = Device Code
x = 4, 5, 7, or 9
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MAXIMUM RATINGS † (TJ = 25°C unless otherwise noted)
Rating
K
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Publication Order Number:
2N6394/D
2N6394 Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
−
−
−
−
10
2.0
mA
mA
OFF CHARACTERISTICS
†Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
IDRM, IRRM
ON CHARACTERISTICS
†Peak Forward On−State Voltage (Note 2) (ITM = 24 A Peak)
VTM
−
1.7
2.2
V
†Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms)
IGT
−
5.0
30
mA
† Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms)
VGT
−
0.7
1.5
V
Gate Non−Trigger Voltage (VD = 12 Vdc, RL = 100 Ohms, TJ = 125°C)
VGD
0.2
−
−
V
† Holding Current (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
IH
−
6.0
50
mA
Turn-On Time (ITM = 12 A, IGT = 40 mAdc, VD = Rated VDRM)
tgt
−
1.0
2.0
ms
Turn-Off Time (VD = Rated VDRM)
tq
−
−
15
35
−
−
ms
dv/dt
−
50
−
V/ms
(ITM = 12 A, IR = 12 A)
(ITM = 12 A, IR = 12 A, TJ = 125°C)
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of Off-State Voltage Exponential
(VD = Rated VDRM, TJ = 125°C)
†Indicates JEDEC Registered Data
2. Pulse Test: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%.
Voltage Current Characteristic of SCR
Symbol
Parameter
+ Current
Anode +
VTM
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
on state
IH
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
130
P(AV) , AVERAGE POWER (WATTS)
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)
Anode −
125
α
120
α = CONDUCTION ANGLE
115
110
105
dc
100
α = 30°
95
60°
90°
90
0
16
α
α = CONDUCTION ANGLE
14
12
α = 30°
10
180°
dc
90°
60°
8.0
6.0
TJ ≈ 125°C
4.0
2.0
0
180°
7.0
4.0
5.0
1.0
2.0
3.0
6.0
IT(AV), AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
20
18
8.0
Figure 1. Current Derating
0
1.0
2.0
3.0
7.0
4.0
5.0
6.0
IT(AV), AVERAGE ON‐STATE CURRENT (AMPS)
8.0
Figure 2. Maximum On−State Power Dissipation
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2
2N6394 Series
100
TJ = 25°C
70
125°C
50
30
10
7.0
5.0
3.0
2.0
100
I TSM , PEAK SURGE CURRENT (AMP)
iTM , INSTANTANEOUS ON-STATE CURRENT (AMPS)
20
1.0
0.7
0.5
0.3
0.2
0.1
0.4
1.2
2.0
2.8
3.6
4.4
5.2
vTH, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
6.0
Figure 3. On−State Characteristics
1 CYCLE
95
90
85
80
75
70
TJ = 125°C
f = 60 Hz
65
60
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
55
50
2.0
1.0
3.0
4.0
NUMBER OF CYCLES
6.0
8.0
10
Figure 4. Maximum Non−Repetitive Surge Current
1.0
0.7
0.5
0.3
0.2
ZqJC(t) = RqJC • r(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
t, TIME (ms)
100
Figure 5. Thermal Response
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3
200 300
500
1.0 k
2.0 k 3.0 k 5.0 k
10
2N6394 Series
IGTM , PEAK GATE CURRENT (mA)
300
200
I GT, GATE TRIGGER CURRENT (NORMALIZED)
TYPICAL CHARACTERISTICS
OFF‐STATE VOLTAGE = 12 V
100
70
50
30
20
TJ = -40°C
25°C
10
7.0
5.0
100°C
3.0
0.2
0.5
1.0
2.0
5.0
10
20
PULSE WIDTH (ms)
50
100
200
3.0
OFF‐STATE VOLTAGE = 12 V
2.0
1.0
0.7
0.5
0.3
-40 -20
Figure 6. Typical Gate Trigger Current
versus Pulse Width
20
40
60
80
100 120
TJ, JUNCTION TEMPERATURE (°C)
140 160
Figure 7. Typical Gate Trigger Current
versus Temperature
1.1
30
OFF‐STATE VOLTAGE = 12 V
OFF‐STATE VOLTAGE = 12 V
1.0
IH , HOLDING CURRENT (mA)
VGT, GATE TRIGGER VOLTAGE (VOLTS)
0
0.9
0.8
0.7
0.6
20
10
7.0
5.0
0.5
0.4
-60 -40
3.0
-20
0
20
40
60
80
100
120
140
-60 -40
-20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Gate Trigger Voltage
versus Temperature
Figure 9. Typical Holding Current
versus Temperature
120 140
ORDERING INFORMATION
Device
Package
2N6394G
500 Units / Bulk
2N6394TG
50 Units / Rail
2N6395G
2N6397G
Shipping**
500 Units / Bulk
TO−220AB
(Pb−Free)
2N6397TG
500 Units / Bulk
50 Units / Rail
2N6399G
500 Units / Bulk
2N6399TG
50 Units / Rail
**For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
2N6394 Series
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−07
ISSUE AA
−T−
B
F
4
Q
T
SEATING
PLANE
C
S
A
U
1 2 3
H
K
Z
R
L
V
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
CATHODE
ANODE
GATE
ANODE
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2N6394/D