BAS16WT1 D

BAS16WT1G
Silicon Switching Diode
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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1
ANODE
3
CATHODE
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
100
V
Recurrent Peak Forward Current
IR
200
mA
IFM(surge)
500
mA
Peak Forward Surge Current
Pulse Width = 10 ms
Total Power Dissipation,
One Diode Loaded TA = 25°C
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Operating and Storage Junction
Temperature Range
PD
TJ, Tstg
200
mW
1.6
mW/°C
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Symbol
Max
Unit
RqJA
625
°C/W
MARKING
DIAGRAM
A6 MG
G
SC−70
CASE 419
STYLE 2
1
A6
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
BAS16WT1G
SC−70
(Pb−Free)
3000 / Tape & Reel
SBAS16WT1G
SC−70
(Pb−Free)
3000 / Tape & Reel
NSVBAS16WT3G
SC−70
(Pb−Free)
10000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
March, 2014− Rev. 11
1
Publication Order Number:
BAS16WT1/D
BAS16WT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
−
−
−
−
715
866
1000
1250
−
−
−
1.0
50
30
CD
−
2.0
pF
trr
−
6.0
ns
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 W) (Figure 2)
QS
−
45
PC
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3)
VFR
−
1.75
V
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
Reverse Current
(VR = 100 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
IR
Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 W) (Figure 1)
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2
Unit
mV
mA
BAS16WT1G
1 ns MAX
DUT
500 W
t
trr
10%
tif
50 W
DUTY CYCLE = 2%
90%
VF
Irr
100 ns
Figure 1. Reverse Recovery Time Equivalent Test Circuit
OSCILLOSCOPE
R . 10 MW
C 3 7 pF
500 W
VC
DUT
BAW62
VCM
20 ns MAX
D1
t
10%
243 pF
100 KW
Qa
VCM +
C
DUTY CYCLE = 2%
t
90%
Vf
400 ns
Figure 2. Stored Charge Equivalent Test Circuit
V
120 ns
450 W
1 KW
V
90%
DUT
Vfr
t
10%
DUTY CYCLE = 2%
2 ns MAX
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
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3
50 W
BAS16WT1G
10
100
IR , REVERSE CURRENT (μA)
10
TA = 85°C
TA = 25°C
1.0
TA = -40°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
10
0
1.2
Figure 4. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Leakage Current
0.68
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
TA = 150°C
0.64
0.60
0.56
0.52
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
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4
8
50
BAS16WT1G
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
c
A2
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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5
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For additional information, please contact your local
Sales Representative
BAS16WT1/D
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