DA121TT1 D

DA121TT1G
Silicon Switching Diode
Features
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
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MAXIMUM RATINGS (TA = 25C)
Rating
Symbol
Max
Unit
Continuous Reverse Voltage
VR
80
V
Recurrent Peak Forward Current
IF
200
mA
IFM(surge)
500
mA
Symbol
Max
Unit
Peak Forward Surge Current
Pulse Width = 10 ms
3
CATHODE
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR--4 Board (Note 1)
TA = 25C
Derated above 25C
Thermal Resistance,
Junction--to--Ambient (Note 1)
Total Device Dissipation,
FR--4 Board (Note 2)
TA = 25C
Derated above 25C
Thermal Resistance,
Junction--to--Ambient (Note 2)
Junction and Storage Temperature
Range
PD
225
mW
1.8
mW/C
555
C/W
360
mW
2.9
mW/C
RθJA
345
C/W
TJ, Tstg
--55 to +150
C
RθJA
PD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR--4 @ Minimum Pad
2. FR--4 @ 1.0  1.0 Inch Pad
1
ANODE
1
2
SOT--416 / SC--75
CASE 463
STYLE 2
MARKING DIAGRAM
6A M G
G
1
6A
= Specific Device Code
M
= Date Code*
G
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or orientation may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
DA121TT1G
Package
Shipping†
SOT--416
(Pb--Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev. 3
1
Publication Order Number:
DA121TT1/D
DA121TT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Symbol
Min
Max
-----
715
866
1000
1250
----
1.0
50
30
CD
--
2.0
pF
trr
--
6.0
ns
Stored Charge -- (IF = 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2)
QS
--
45
PC
Forward Recovery Voltage -- (IF = 10 mA, tr = 20 ns) (Figure 3)
VFR
--
1.75
V
Characteristic
Forward Voltage -(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
Reverse Current -(VR = 75 V)
(VR = 75 V, TJ = 150C)
(VR = 25 V, TJ = 150C)
IR
Capacitance -- (VR = 0, f = 1.0 MHz)
Reverse Recovery Time -- (IF = IR = 10 mA, RL = 50 Ω) (Figure 1)
1 ns MAX
mV
mA
DUT
500 Ω
t
10%
Unit
trr
tif
50 Ω
DUTY CYCLE = 2%
90%
VF
Irr
100 ns
Figure 1. Reverse Recovery Time Equivalent Test Circuit
VC
500 Ω
DUT
VCM
20 ns MAX
D1
t
10%
VCM =
Qa
C
243 pF
100 KΩ
DUTY CYCLE = 2%
OSCILLOSCOPE
R  10 MΩ
C  7 pF
t
90%
Vf
BAW62
400 ns
Figure 2. Recovery Charge Equivalent Test Circuit
V
120 ns
V
1 KΩ
450 Ω
90%
DUT
Vfr
t
10%
DUTY CYCLE = 2%
2 ns MAX
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
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2
50 Ω
DA121TT1G
10
IR , REVERSE CURRENT (A)
IF, FORWARD CURRENT (mA)
100
10
TA = 85C
TA = 25C
1.0
TA = -- 40C
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
0.001
1.2
TA = 150C
TA = 25C
0
10
Figure 4. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
50
Figure 5. Leakage Current
CD , DIODE CAPACITANCE (pF)
0.68
0.64
0.60
0.56
0.52
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
8
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
Figure 6. Capacitance
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
Figure 7. Normalized Thermal Response
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3
10
100
1000
DA121TT1G
PACKAGE DIMENSIONS
SC--75 (SOT--416)
CASE 463--01
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
--E-2
3
b 3 PL
0.20 (0.008)
e
DIM
A
A1
b
C
D
E
e
L
HE
--D--
1
M
D
0.20 (0.008) E
HE
C
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.067
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
MIN
0.027
0.000
0.006
0.004
0.059
0.027
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
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4
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DA121TT1/D
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