BAW56M3 D

BAW56M3T5G
Dual Switching Diode
Common Anode
The BAW56M3T5G device is a spin−off of our popular SOT−23
three−leaded device. It is designed for switching applications and is
housed in the SOT−723 surface mount package. This device is ideal
for low−power surface mount applications where board space is at a
premium.
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70 V
DUAL COMMON ANODE
SWITCHING DIODE
Features
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
75
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Symbol
Max
Unit
Peak Forward Surge Current
CATHODE
1
ANODE
3
2
CATHODE
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction−to−Ambient
RqJA
470
°C/W
PD
640
mW
5.1
mW/°C
RqJA
195
°C/W
TJ, Tstg
−55 to
+150
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
265
2.1
mW
mW/°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
January, 2009 − Rev. 0
3
1
2
1
SOT−723
CASE 631AA
STYLE 4
AN M
1
AN = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
BAW56M3T5G
SOT−723
(Pb−Free)
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BAW56M3/D
BAW56M3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic
Reverse Breakdown Voltage
(I(BR) = 100 mA)
Symbol
Min
Max
Unit
V(BR)
70
−
V
−
−
−
30
2.5
50
−
2.0
−
−
−
−
715
855
1000
1250
−
6.0
Reverse Voltage Leakage Current
IR
(VR = 25 V, TJ = 150°C)
(VR = 70 V)
(VR = 70 V, TJ = 150°C)
Diode Capacitance
CD
(VR = 0 V, f = 1.0 MHz)
Forward Voltage
VF
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
Reverse Recovery Time
(IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1)
pF
mV
trr
RL = 100 W
mA
ns
820 W
+10 V
2.0 k
100 mH
tr
0.1 mF
IF
tp
t
IF
trr
10%
t
0.1 mF
90%
D.U.T.
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
IR
VR
INPUT SIGNAL
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
BAW56M3T5G
Curves Applicable to Each Cathode
10
100
IR , REVERSE CURRENT (μA)
TA = 85°C
10
TA = -40°C
1.0
TA = 25°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
10
0
1.2
Figure 2. Forward Voltage
20
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
1.75
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
TA = 150°C
1.5
1.25
1.0
0.75
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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3
8
40
50
BAW56M3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
b1
A
−Y−
3
1
e
2
E
HE
L
b 2X
0.08 (0.0032) X Y
C
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
DIM
A
b
b1
C
D
E
e
HE
L
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.15
0.20
0.25
INCHES
MIN
NOM
MAX
0.018 0.020 0.022
0.0059 0.0083 0.0106
0.010 0.012 0.015
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION
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4
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For additional information, please contact your local
Sales Representative
BAW56M3/D
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