BAV70M3 D

BAV70M3
Dual Switching Diode
Common Cathode
The BAV70M3T5G device is a spin−off of our popular SOT−23
three−leaded device. It is designed for switching applications and is
housed in the SOT−723 surface mount package. This device is ideal
for low−power surface mount applications where board space is at a
premium.
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70 V
DUAL COMMON CATHODE
SWITCHING DIODES
Features
• Reduces Board Space
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
Value
Unit
VR
100
Vdc
IF
200
mAdc
IFM(surge)
500
mAdc
Symbol
Max
Unit
1
ANODE
2
ANODE
3
CATHODE
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR− 5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction−to−Ambient
RqJA
470
°C/W
PD
640
mW
5.1
mW/°C
RqJA
195
°C/W
TJ, Tstg
−55 to
+150
°C
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
mW
2
265
mW/°C
April, 2015 − Rev. 2
SOT−723
CASE 631AA
STYLE 3
1
AL M
1
2.1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2015
3
1
AL = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
BAV70M3T5G
SOT−723
(Pb−Free)
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BAV70M3/D
BAV70M3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic
Reverse Breakdown Voltage
(I(BR) = 100 mA)
Symbol
Min
Max
Unit
V(BR)
100
−
V
−
−
−
60
1.0
100
−
1.5
−
−
−
−
715
855
1000
1250
−
6.0
Reverse Voltage Leakage Current (Note 3)
mA
IR
(VR = 25 V, TJ = 150°C)
(VR = 100 V)
(VR = 70 V, TJ = 150°C)
Diode Capacitance
CD
pF
(VR = 0 V, f = 1.0 MHz)
Forward Voltage
VF
mV
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
RL = 100 W
Reverse Recovery Time
(IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1)
trr
ns
3. For each individual diode while second diode is unbiased.
820 W
+10 V
2.0 k
100 mH
tr
0.1 mF
IF
tp
t
IF
trr
10%
t
0.1 mF
90%
D.U.T.
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
IR
VR
INPUT SIGNAL
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
BAV70M3
Curves Applicable to Each Anode
10
10
TA = 85°C
IR, REVERSE CURRENT (mA)
TA = 125°C
TA = 55°C
TA = 25°C
1
TA = 150°C
TA = −40°C
0.1
TA = −55°C
0.01
0.1
TA = 150°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0.2
0.3 0.4 0.5 0.6 0.7 0.8
VF, FORWARD VOLTAGE (V)
0.9
0
1.0
10
Figure 2. Forward Voltage
20
30
40
50
VF, REVERSE VOLTAGE (V)
Figure 3. Leakage Current
0.6
Cd, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
100
0.58
0.56
0.54
0.52
0.5
0.48
0
1
2
3
4
5
6
VR, REVERSE VOLTAGE (V)
Figure 4. Capacitance
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3
7
8
60
70
BAV70M3
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
A
b1
−Y−
3
E
1
HE
2
2X
2X
b
e
C
0.08 X Y
SIDE VIEW
TOP VIEW
3X
L
1
RECOMMENDED
SOLDERING FOOTPRINT*
3X
L2
DIM
A
b
b1
C
D
E
e
HE
L
L2
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
2X
BOTTOM VIEW
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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PUBLICATION ORDERING INFORMATION
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4
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BAV70M3/D
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