DAP222M3 D

DAP222M3T5G
Preferred Device
Product Preview
Common Anode Silicon
Dual Switching Diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. The
DAP222 device is housed in the SOT−723 package which is designed
for low power surface mount applications, where board space is at a
premium.
• Fast trr
• Low CD
• ESD Performance: Human Body Model; 2000 V,
Machine Model 200 V
• Available in 4 mm Tape and Reel
• This is a Pb−Free Device
http://onsemi.com
ANODE
3
1
2
CATHODE
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
VR
80
V
VRM
80
V
IF
100
mA
IFM
300
mA
IFSM
(Note 1)
2.0
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current
Power Dissipation
3
2
SOT−723
CASE 631AA
STYLE 4
P9 M
1
A
P9
M
THERMAL CHARACTERISTICS
Rating
MARKING
DIAGRAM
Symbol
Max
Unit
PD
260
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
−55 ~ + 150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. t = 1.0 S.
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
Package
Shipping†
DAP222M3T5G
SOT−723
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
 Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 1
1
Publication Order Number:
DAP222M3/D
DAP222M3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current
IR
VR = 70 V
−
0.1
A
Forward Voltage
VF
IF = 100 mA
−
1.2
V
Reverse Breakdown Voltage
VR
IR = 100 A
80
−
V
Diode Capacitance
CD
VR = 6.0 V, f = 1.0 MHz
−
3.5
pF
trr
(Note 2)
IF = 5.0 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR
−
4.0
ns
Reverse Recovery Time
2. trr Test Circuit for DAP222 in Figure 4.
http://onsemi.com
2
DAP222M3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
10
IR , REVERSE CURRENT (µA)
TA = 85°C
10
TA = −40°C
1.0
0.1
TA = 25°C
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
0.001
1.2
TA = 150°C
TA = 25°C
10
0
Figure 1. Forward Voltage
50
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current
1.75
CD , DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
100
1.5
1.25
1.0
0.75
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
tr
tp
t
IF
trr
t
10%
A
RL
Irr = 0.1 IR
90%
VR
tp = 2 s
tr = 0.35 ns
INPUT PULSE
RECOVERY TIME EQUIVALENT TEST CIRCUIT
Figure 4. Reverse Recovery Time Test Circuit
http://onsemi.com
3
IF = 5.0 mA
VR = 6 V
RL = 100 OUTPUT PULSE
DAP222M3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
A
b1
−Y−
3
E
1
e
HE
L
2
b 2X
0.08 (0.0032) X Y
DIM
A
b
b1
C
D
E
e
HE
L
C
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.15
0.20
0.25
INCHES
MIN
NOM
MAX
0.018 0.020 0.022
0.0059 0.0083 0.0106
0.010 0.012 0.015
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
SCALE 20:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
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Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
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4
For additional information, please contact your
local Sales Representative.
DAP222M3/D
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