2N6035 D

2N6034G, 2N6035G,
2N6036G (PNP),
2N6038G,2N6039G (NPN)
Plastic Darlington
Complementary Silicon
Power Transistors
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Plastic Darlington complementary silicon power transistors are
designed for general purpose amplifier and low−speed switching
applications.
Features
4.0 AMPERES DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS, 40 WATTS
• ESD Ratings: Machine Model, C; > 400 V
•
•
NPN
Human Body Model, 3B; > 8000 V
Epoxy Meets UL 94 V−0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
VCEO
Collector−Base Voltage
2N6034G
2N6035G, 2N6038G
2N6036G, 2N6039G
VCBO
Emitter−Base Voltage
VEBO
5.0
Vdc
IC
4.0
Adc
ICM
8.0
Apk
Base Current
IB
100
mAdc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
40
320
W
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
– 65 to + 150
°C
Collector Current − Peak
Operating and Storage Junction
Temperature Range
Vdc
40
60
80
BASE
3
BASE
3
EMITTER 1
EMITTER 1
2N6038
2N6039
2N6034
2N6035
2N6036
Vdc
40
60
80
TJ, Tstg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
COLLECTOR 2, 4
Unit
Collector−Emitter Voltage
2N6034G
2N6035G, 2N6038G
2N6036G, 2N6039G
Collector Current − Continuous
PNP
COLLECTOR 2, 4
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
3.12
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
83.3
°C/W
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
YWW
2
N603xG
Y
WW
2N603x
G
= Year
= Work Week
= Device Code
x = 4, 5, 6, 8, 9
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 15
1
Publication Order Number:
2N6035/D
2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
2N6034G
2N6035G, 2N6038G
2N6036G, 2N6039G
VCEO(sus)
Vdc
40
60
80
Collector−Cutoff Current
(VCE = 40 Vdc, IB = 0)
2N6034G
(VCE = 60 Vdc, IB = 0)
2N6035G, 2N6038G
(VCE = 80 Vdc, IB = 0)
2N6036G, 2N6039G
ICEO
Collector−Cutoff Current
(VCE = 40 Vdc, VBE(off) = 1.5 Vdc)
2N6034G
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
2N6035G, 2N6038G
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
2N6036G, 2N6039G
(VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
2N6034G
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
2N6035G, 2N6038G
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
2N6036G, 2N6039G
ICEX
Collector−Cutoff Current
(VCB = 40 Vdc, IE = 0)
2N6034G
(VCB = 60 Vdc, IE = 0)
2N6035G, 2N6038G
(VCB = 80 Vdc, IE = 0)
2N6036G, 2N6039G
ICBO
Emitter−Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
−
−
−
mA
−
100
−
100
−
100
mA
−
100
−
100
−
100
−
500
−
500
−
500
mAdc
−
0.5
−
0.5
−
0.5
−
2.0
500
750
100
−
15,000
−
−
−
2.0
3.0
−
4.0
−
2.8
25
−
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 8.0 mAdc)
(IC = 4.0 Adc, IB = 40 mAdc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 40 mAdc)
VBE(sat)
Base−Emitter On Voltage
(IC = 2.0 Adc, VCE = 3.0 Vdc)
VBE(on)
−
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current−Gain
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)
|hfe|
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6034G, 2N6035G, 2N6036G
2N6038G, 2N6039G
Cob
−
pF
−
−
200
100
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Indicates JEDEC Registered Data.
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2
2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)
VCC
-30 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
RC
SCOPE
TUT
V2
approx
+8.0 V
RB
D1
51
0
V1
approx
-12 V
≈ 8.0 k
≈ 60
+4.0 V
25 ms
for td and tr, D1 is disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
For NPN test circuit, reverse diode,
polarities and input pulses.
Figure 1. Switching Times Test Circuit
4.0
VCC = 30 V
IC/IB = 250
ts
IB1 = IB2
TJ = 25°C
t, TIME (s)
μ
2.0
tf
1.0
0.8
tr
0.6
0.4
td @ VBE(off) = 0
PNP
NPN
0.2
0.04 0.06
0.1
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
r(t), TRANSIENT THERMAL RESISTANCE,
NORMALIZED
Figure 2. Switching Times
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.03
P(pk)
qJC(t) = r(t) qJC
qJC = 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) qJC(t)
DUTY CYCLE, D = t1/t2
0.05
0.02
0.01
SINGLE PULSE
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
t, TIME (ms)
10
Figure 3. Thermal Response
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3
20
30
50
100
200 300
500
1000
2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)
ACTIVE−REGION SAFE−OPERATING AREA
IC, COLLECTOR CURRENT (AMP)
5.0ms
3.0
2.0
1.0ms
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.3
0.2
7.0
1.0ms
dc
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
1.0
0.7
0.5
0.3
0.2
2N6036
2N6035
70
20
10
30
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
5.0
100
100 ms
5.0ms
3.0
2.0
dc
1.0
0.7
0.5
0.1
5.0
1.0
7.0
5.0
100 ms
IC, COLLECTOR CURRENT (AMP)
1.0
7.0
5.0
2N6039
2N6038
7.0
20
10
30
50
70
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. 2N6035, 2N6036
100
Figure 5. 2N6038, 2N6039
200
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 4 and 5 is based on T J(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 3.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
TC = 25°C
C, CAPACITANCE (pF)
100
70
50
Cob
30
Cib
20
PNP
NPN
10
0.04 0.06 0.1
0.2 0.4 0.6 1.0
2.0 4.0 6.0 10
VR, REVERSE VOLTAGE (VOLTS)
20
40
Figure 6. Capacitance
PNP
2N6034, 2N6035, 2N6036
NPN
2N6038, 2N6039
6.0 k
6.0 k
4.0 k
4.0 k
3.0 k
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
VCE = 3.0 V
TC = 125°C
25°C
2.0 k
-55°C
1.0 k
800
600
400
300
0.04 0.06
0.1
0.2
1.0
0.4 0.6
IC, COLLECTOR CURRENT (AMP)
2.0
3.0 k
25°C
2.0 k
-55°C
1.0 k
800
600
400
300
0.04 0.06
4.0
Figure 7. DC Current Gain
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4
VCE = 3.0 V
TJ = 125°C
0.1
0.2
1.0
0.4 0.6
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)
3.4
TJ = 25°C
3.0
2.6
IC =
0.5 A
1.0 A
2.0 A
4.0 A
2.2
1.8
1.4
1.0
0.6
0.1
0.2
0.5
1.0 2.0
5.0 10
IB, BASE CURRENT (mA)
20
100
50
3.4
3.0
TJ = 25°C
IC =
0.5 A
2.6
1.0 A
4.0 A
2.0 A
2.2
1.8
1.4
1.0
0.6
0.1
0.2
0.5
1.0 2.0
10
5.0
IB, BASE CURRENT (mA)
20
50
100
Figure 8. Collector Saturation Region
2.2
2.2
TJ = 25°C
TJ = 25°C
1.4
1.8
VBE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.8
VBE @ VCE = 3.0 V
1.0
VCE(sat) @ IC/IB = 250
0.6
0.2
0.04 0.06
1.4
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3.0 V
1.0
VCE(sat) @ IC/IB = 250
0.6
0.1
0.2
0.4
0.6
1.0
0.2
0.04 0.06
2.0 4.0
IC, COLLECTOR CURRENT (AMP)
0.1
0.2
0.4
0.6
1.0
IC, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltages
ORDERING INFORMATION
Device
Package
Shipping
2N6034G
TO−225
(Pb−Free)
500 Units / Box
2N6035G
TO−225
(Pb−Free)
500 Units / Box
2N6036G
TO−225
(Pb−Free)
500 Units / Box
2N6038G
TO−225
(Pb−Free)
500 Units / Box
2N6039G
TO−225
(Pb−Free)
500 Units / Box
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5
2.0
4.0
2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN)
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AC
4
3 2
1
1 2
3
FRONT VIEW
BACK VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
E
A1
Q
A
PIN 4
BACKSIDE TAB
D
P
1
2
3
L1
L
2X
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
b2
2X
e
b
FRONT VIEW
c
SIDE VIEW
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2N6035/D
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