ETC 2N6035/D

ON Semiconductor
PNP
2N6035
Plastic Darlington
Complementary Silicon Power
Transistors
2N6036*
NPN
2N6038
. . . designed for general–purpose amplifier and low–speed
switching applications.
2N6039 *
• High DC Current Gain —
hFE = 2000 (Typ) @ IC = 2.0 Adc
• Collector–Emitter Sustaining Voltage — @ 100 mAdc
•
•
•
*ON Semiconductor Preferred Device
VCEO(sus) = 60 Vdc (Min) — 2N6035, 2N6038 = 80 Vdc
(Min) — 2N6036, 2N6039
Forward Biased Second Breakdown Current Capability
IS/b = 1.5 Adc @ 25 Vdc
Monolithic Construction with Built–In Base–Emitter Resistors to
LimitELeakage Multiplication
Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic
Package
DARLINGTON
4–AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80 VOLTS
40 WATTS
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MAXIMUM RATINGS (1)
Symbol
2N6035
2N6038
2N6036
2N6039
Unit
VCEO
60
80
Vdc
Collector–Base Voltage
VCB
60
80
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
IC
4.0
8.0
Adc
Base Current
IB
100
mAdc
Total Power Dissipation @ TC = 25C
Derate above 25C
PD
40
0.32
Watts
W/C
Total Power Dissipation @ TA = 25C
Derate above 25C
PD
1.5
0.012
Watts
TJ, Tstg
–65 to +150
C
Rating
Collector–Emitter Voltage
Collector Current — Continuous
Peak
Operating and Storage Junction
Temperature Range
CASE 77–09
TO–225AA TYPE
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
θJC
3.12
C/W
Thermal Resistance, Junction to Ambient
θJA
83.3
C/W
(1) Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 9
1
Publication Order Number:
2N6035/D
2N6035 2N6036 2N6038 2N6039
PD, POWER DISSIPATION (WATTS)
TA TC
4.0 40
3.0 30
TC
2.0 20
1.0 10
0
0
TA
0
20
40
60
80
100
T, TEMPERATURE (°C)
120
Figure 1. Power Derating
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2
140
160
2N6035 2N6036 2N6038 2N6039
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
80
—
—
—
—
100
100
—
—
—
—
100
100
500
500
—
—
0.5
0.5
—
2.0
500
750
100
—
15,000
—
—
—
2.0
3.0
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
2N6035, 2N6038
2N6036, 2N6039
Collector–Cutoff Current
(VCE = 60 Vdc, IB = 0)
(VCE = 80 Vdc, IB = 0)
2N6035, 2N6038
2N6036, 2N6039
Collector–Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125C)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125C)
2N6035, 2N6038
2N6036, 2N6039
2N6035, 2N6038
2N6036, 2N6039
Collector–Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
2N6035, 2N6038
2N6036, 2N6039
Vdc
µA
ICEO
µA
ICEX
ICBO
Emitter–Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
hFE
—
Collector–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 8.0 mAdc)
(IC = 4.0 Adc, IB = 40 mAdc)
VCE(sat)
Vdc
Base–Emitter Saturation Voltage (IC = 4.0 Adc, IB = 40 mAdc)
VBE(sat)
—
4.0
Vdc
Base–Emitter On Voltage (IC = 2.0 Adc, VCE = 3.0 Vdc)
VBE(on)
—
2.8
Vdc
Small–Signal Current–Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)
|hfe|
25
—
—
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
—
—
200
100
DYNAMIC CHARACTERISTICS
2N6035, 2N6036
2N6038, 2N6039
*Indicates JEDEC Registered Data.
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3
pF
2N6035 2N6036 2N6038 2N6039
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
t, TIME (s)
µ
D1
51
V1
approx
-12 V
≈ 8.0 k
≈ 60
+4.0 V
25 µs
tf
1.0
0.8
tr
0.6
0.4
for td and tr, D1 is disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
0.2
0.04 0.06
For NPN test circuit, reverse diode,
polarities and input pulses.
0.1
r(t), TRANSIENT THERMAL RESISTANCE,
NORMALIZED
2.0
4.0
Figure 3. Switching Times
0.2
0.2
0.1
P(pk)
θJC(t) = r(t) θJC
θJC = 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) θJC(t)
DUTY CYCLE, D = t1/t2
0.05
0.1
0.07
0.05
0.02
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
D = 0.5
0.3
0.03
td @ VBE(off) = 0
PNP
NPN
Figure 2. Switching Times Test Circuit
1.0
0.7
0.5
IB1 = IB2
TJ = 25°C
SCOPE
RB
0
VCC = 30 V
IC/IB = 250
ts
2.0
RC
TUT
V2
approx
+8.0 V
4.0
VCC
-30 V
0.02
SINGLE PULSE
0.01
0.01
0.02 0.03
0.01
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
t, TIME (ms)
10
Figure 4. Thermal Response
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4
20
30
50
100
200 300
500
1000
2N6035 2N6036 2N6038 2N6039
ACTIVE–REGION SAFE–OPERATING AREA
IC, COLLECTOR CURRENT (AMP)
5.0ms
3.0
2.0
1.0ms
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.3
0.2
7.0
dc
0.3
0.2
70
20
10
30
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
5.0
100
1.0ms
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
1.0
0.7
0.5
2N6036
2N6035
100 µs
5.0ms
3.0
2.0
dc
1.0
0.7
0.5
0.1
5.0
1.0
7.0
5.0
100 µs
IC, COLLECTOR CURRENT (AMP)
1.0
7.0
5.0
2N6039
2N6038
7.0
20
10
30
50
70
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. 2N6035, 2N6036
100
Figure 6. 2N6038, 2N6039
200
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) = 150C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
TC = 25°C
C, CAPACITANCE (pF)
100
70
50
Cob
30
Cib
20
10
0.04 0.06 0.1
PNP
NPN
0.2 0.4 0.6 1.0
2.0 4.0 6.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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5
20
40
2N6035 2N6036 2N6038 2N6039
PNP
2N6035, 2N6036
NPN
2N6038, 2N6039
6.0 k
6.0 k
4.0 k
3.0 k
25°C
2.0 k
-55°C
1.0 k
800
600
400
300
0.04 0.06
0.1
0.2
1.0
0.4 0.6
IC, COLLECTOR CURRENT (AMP)
3.0 k
25°C
2.0 k
-55°C
1.0 k
800
600
400
300
0.04 0.06
4.0
2.0
VCE = 3.0 V
TJ = 125°C
4.0 k
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
VCE = 3.0 V
TC = 125°C
0.1
0.2
1.0
0.4 0.6
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
3.4
TJ = 25°C
3.0
2.6
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. DC Current Gain
IC =
0.5 A
1.0 A
2.2
2.0 A
4.0 A
1.8
1.4
1.0
0.6
0.1
0.2
0.5
1.0 2.0
5.0 10
IB, BASE CURRENT (mA)
20
50
100
3.4
3.0
2.6
IC =
0.5 A
TJ = 25°C
1.0 A
4.0 A
2.0 A
2.2
1.8
1.4
1.0
0.6
0.1
0.2
0.5
5.0
1.0 2.0
10
IB, BASE CURRENT (mA)
20
50
100
Figure 9. Collector Saturation Region
2.2
2.2
TJ = 25°C
TJ = 25°C
1.4
1.8
VBE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.8
VBE @ VCE = 3.0 V
1.0
VCE(sat) @ IC/IB = 250
0.6
0.2
0.04 0.06
1.4
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3.0 V
1.0
VCE(sat) @ IC/IB = 250
0.6
0.1
0.2
0.4
0.6
1.0
0.2
0.04 0.06
2.0 4.0
0.1
0.2
0.4
0.6
1.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
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6
2.0
4.0
2N6035 2N6036 2N6038 2N6039
PACKAGE DIMENSIONS
TO–225AA
CASE 77–09
ISSUE W
–B–
U
F
Q
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
M
1 2 3
H
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
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7
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
---
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
---
2N6035 2N6036 2N6038 2N6039
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2N6035/D