BD676 D

BD676G,
BD678G,
BD680G,
BD682G,
BD676AG,
BD678AG,
BD680AG,
BD682TG
Plastic Medium-Power
Silicon PNP Darlingtons
http://onsemi.com
This series of plastic, medium−power silicon PNP Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
• High DC Current Gain
• Monolithic Construction
• BD676, 676A, 678, 678A, 680, 680A, 682 are complementary
4.0 AMP DARLINGTON
POWER TRANSISTORS
PNP SILICON
45, 60, 80, 100 VOLT, 40 WATT
COLLECTOR 2, 4
with BD675, 675A, 677, 677A, 679, 679A, 681
• BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
• These Devices are Pb−Free and are RoHS Compliant*
BASE 3
EMITTER 1
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BD676G, BD676AG
BD678G, BD678AG
BD680G, BD680AG
BD682G, BD682TG
Symbol
Value
VCEO
Unit
Vdc
45
60
80
100
Collector-Base Voltage
BD676G, BD676AG
BD678G, BD678AG
BD680G, BD680AG
BD682G, BD682TG
VCB
Emitter-Base Voltage
VEB
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
0.1
Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
40
0.32
W
W/°C
−55 to +150
°C
Operating and Storage Junction
Temperature Range
Vdc
45
60
80
100
TJ, Tstg
TO−225
CASE 77−09
STYLE 1
1 2
3
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAMS
YWW
BD6xxG
YWW
BD6xxAG
Y
= Year
WW
= Work Week
BD6xx = Device Code
xx = 76, 78, 80, 82, or 82T
G
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Symbol
Max
Unit
ORDERING INFORMATION
RqJC
3.13
°C/W
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 14
Publication Order Number:
BD676/D
BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
BVCEO
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 50 mAdc, IB = 0)
BD676G, BD676AG
BD678G, BD678AG
BD680G, BD680AG
BD682G, BD682TG
Collector Cutoff Current
(VCE = Half Rated VCEO, IB = 0)
ICEO
Collector Cutoff Current
(VCB = Rated BVCEO, IE = 0)
(VCB = Rated BVCEO. IE = 0, TC = 100°C)
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
Vdc
45
60
80
100
−
−
−
−
−
500
−
−
0.2
2.0
−
2.0
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
BD676G, BD678G, BD680G, BD682G
(IC = 2.0 Adc, VCE = 3.0 Vdc)
BD676AG, BD678AG, BD680AG
hFE
Collector−Emitter Saturation Voltage (Note 1)
(IC = 1.5 Adc, IB = 30 mAdc)
BD678G, BD680G, BD682G
(IC = 2.0 Adc, IB = 40 mAdc)
BD676AG, BD678AG, BD680AG
VCE(sat)
Base−Emitter On Voltage (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
BD678G, BD680G, BD682G
(IC = 2.0 Adc, VCE = 3.0 Vdc)
BD676AG, BD678AG, BD680AG
VBE(on)
−
750
−
750
−
Vdc
−
2.5
−
2.8
Vdc
−
2.5
−
2.5
1.0
−
DYNAMIC CHARACTERISTICS
hfe
Small−Signal Current Gain
(IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
50
5.0
IC, COLLECTOR CURRENT (AMP)
PD, POWER DISSIPATION (WATTS)
45
40
2.0
35
1.0
30
25
0.5
20
0.2
15
10
0.1
5.0
0
15
BONDING WIRE LIMIT
THERMAL LIMIT at TC = 25°C
SECONDARY BREAKDOWN LIMIT
30
45
60
75
90
105
120
135
150
0.05
1.0
165
TC = 25°C
BD676, 676A
BD678, 678A
BD680, 680A
BD682
TC, CASE TEMPERATURE (°C)
2.0
5.0
10
50
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Power Temperature Derating
Figure 2. DC Safe Operating Area
http://onsemi.com
2
100
BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
COLLECTOR
PNP
BD676G, BD676AG
BD678G, BD678AG
BD680G, BD680AG
BD682G, BD682TG
BASE
[ 8.0 k
[ 120
EMITTER
Figure 3. Darlington Circuit Schematic
ORDERING INFORMATION
Device
Package
Shipping
BD676G
TO−225
(Pb−Free)
500 Units / Box
BD676AG
TO−225
(Pb−Free)
500 Units / Box
BD678G
TO−225
(Pb−Free)
500 Units / Box
BD678AG
TO−225
(Pb−Free)
500 Units / Box
BD680G
TO−225
(Pb−Free)
500 Units / Box
BD680AG
TO−225
(Pb−Free)
500 Units / Box
BD682G
TO−225
(Pb−Free)
500 Units / Box
BD682TG
TO−225
(Pb−Free)
50 Units / Rail
http://onsemi.com
3
BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AC
4
3 2
1
1 2
3
FRONT VIEW
BACK VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
E
A1
Q
A
PIN 4
BACKSIDE TAB
D
P
1
2
3
L1
L
2X
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
b2
2X
e
b
FRONT VIEW
c
SIDE VIEW
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BD676/D
Similar pages