COMSET BD675A

NPN BD675/A - BD677/A - BD679/A - BD681/A
SILICON DARLINGTON POWER TRANSISTORS
The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126
plastic package.
They are eptaxial-base transistors in monolithic Darlington circuit for audio and video
applications.
PNP complements are BD676/A - BD678/A - BD680/A - BD682/A
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
BD675/A
BD677/A
BD679/A
BD681/A
BD675/A
BD677/A
BD679/A
BD681/A
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
IB
PT
TJ
TStg
Base current (peak value)
Total power Dissipation
Junction Temperature
Storage Temperature
IC
ICM
IBM
@ Tmb = 25°C
Unit
45
60
80
100
45
60
80
100
5
4
6
0.1
40
150
-65 to +150
A
W
°C
°C
Value
Unit
3.12
100
K/W
K/W
V
V
V
A
THERMAL CHARACTERISTICS
Symbol
RthJ-mb
RthJ-a
Ratings
Thermal Resistance, Junction to mouting base
Thermal Resistance, Junction to ambient in free air
23/10/2012
COMSET SEMICONDUCTORS
1 |3
NPN BD675/A - BD677/A - BD679/A - BD681/A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
ICBO
Collector cut-off
current
ICEO
Collector cut-off
current
IEBO
Emitter cutoffcurrent
VCEO(SUS)
VCE(SAT)
hFE
VBE
hfe
fhfe
VF
I(SB)
Test Condition(s)
IE=0 , VCB= 60 V
IE=0 , VCB= 80 V
IE=0 , VCB= 100 V
IE=0 , VCB= 120 V
IE=0 ,VCB = 30V, Tj= 150°C
IE=0 ,VCB = 40V, Tj= 150°C
IE=0 ,VCB = 50V, Tj= 150°C
IE=0 ,VCB = 60V, Tj= 150°C
IB=0 , VCE= ½VCEOMAX
IB=0 , VCE= ½VCEOMAX
IB=0 , VCE= ½VCEOMAX
IB=0 , VCE= ½VCEOMAX
BD675/A
BD677/A
BD679/A
BD681/A
BD675/A
BD677/A
BD679/A
BD681/A
BD675/A
BD677/A
BD679/A
BD681/A
IC=0, -VEB=5 V
BD675/A
BD677/A
Collector-Emitter
I =0 , IC=50 mA
sustaning Voltage B
BD679/A
BD681/A
BD675, BD677, BD679, BD681
IC=1.5 A,IB=30 mA
Collector-Emitter
saturation Voltage BD675A, BD677A, BD679A, BD681A
IC=2 A,IB=40 mA
BD675, BD677, BD679, BD681
VCE=3 V, IC=500 mA
BD675, BD677, BD679, BD681
VCE=3 V, IC=1,5 A
DC Current Gain
BD675, BD677, BD679, BD681
VCE=3 V, IC=4 A
BD675A, BD677A, BD679A, BD681A
VCE=3 V, IC=2 A
BD675, BD677, BD679, BD681
VCE=3 V, IC=1,5 A
Base-Emitter
Voltage(1&2)
BD675A, BD677A, BD679A, BD681A
VCE=3 V, IC=2 A
Small signal
VCE=3 V, IC=1,5 A, f= 1 MHz
current gain
Ut-off frequency
VCE=3 V, IC=1,5 A
Diode forward
IF=1,5 A
voltage
Second-VCE=50 V, tP= 20ms,non rep., without
breakdown
heatsink
collector current
23/10/2012
COMSET SEMICONDUCTORS
Min
Typ
Max
Unit
-
-
0,2
0,2
0,2
0,2
2
2
2
2
0,5
0,5
0,5
0,5
-
-
5
mA
45
60
80
100
-
-
V
-
-
2,5
mA
mA
V
-
-
2.8
-
2200
-
750
-
-
-
1500
-
750
-
-
-
-
2,5
-
-
2.5
10
-
-
-
60
-
kHz
-
1,5
-
V
0,8
-
-
A
V
2 |3
NPN BD675/A - BD677/A - BD679/A - BD681/A
Symbol
Ratings
Turn-on time
Turn-off time
ton
toff
1.
2.
Test Condition(s)
-Icon= 1,5A, -Ibon= Iboff= 6mA,
Min
-
Typ
Max
Unit
0,3
1,5
1.5
5
µs
Measured under pulse conditions :tP <300µs, <2%.
VBE decreases by about 3,6 mV/K with increasing temperature.
MECHANICAL DATA CASE TO-126
DIMENSIONS
min
max
7.4
7.8
10.5
10.8
2.4
2.7
0.7
0.9
2.25 typ.
0.49
0.75
4.4 typ.
15.7 typ.
1.27 typ.
3.75 typ.
3.0
3.2
2.54 typ.
A
B
C
D
E
F
G
L
M
N
P
S
Pin 1 :
Pin 2 :
Pin 3 :
Emitter
Collector
Base
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to
change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically
disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not
authorized for use as critical components in life support devices or systems.
www.comsetsemi.com
23/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
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