BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 Plastic Medium-Power Silicon PNP Darlingtons http://onsemi.com ...for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain – • • • hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 4.0 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 45, 60, 80, 100 VOLTS 40 WATTS MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BD676, BD676A BD678, BD678A BD680, BD680A BD682 VCEO Collector-Base Voltage BD676, BD676A BD678, BD678A BD680, BD680A BD682 VCB Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 0.1 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 40 0.32 W W/°C TJ, Tstg –55 to +150 °C Symbol Max Unit RθJC 3.13 °C/W Operating and Storage Junction Temperature Range Value Unit Vdc 45 60 80 100 Vdc TO–225AA CASE 77 STYLE 1 45 60 80 100 MARKING DIAGRAM YWW BD6xxx Y WW BD6xxx xxx = Year = Work Week = Specific Device Code = 76, 76A, 78, 78A, 80, 80A or 82 THERMAL CHARACTERISTICS Characteristic Thermal Resistance – Junction to Case Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 9 ORDERING INFORMATION Device Package Shipping BD676 TO–225AA 500 Units/Box BD676A TO–225AA 500 Units/Box BD678 TO–225AA 500 Units/Box BD678A TO–225AA 500 Units/Box BD680 TO–225AA 500 Units/Box BD680A TO–225AA 500 Units/Box BD682 TO–225AA 500 Units/Box Publication Order Number: BD676/D BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit BVCEO 45 60 80 100 – – – – Vdc Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0) ICEO – 500 µAdc Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) (VCB = Rated BVCEO. IE = 0, TC = 100°C) ICBO – – 0.2 2.0 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO – 2.0 750 750 – – – – 2.5 2.8 – – 2.5 2.5 1.0 – OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (Note 1.) (IC = 50 mAdc, IB = 0) BD676, 676A BD678, 678A BD680, 680A BD682 mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 1.) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) BD676, 678, 680, 682 BD676A, 678A, 680A hFE Collector–Emitter Saturation Voltage (Note 1.) (IC = 1.5 Adc, IB = 30 mAdc) (IC = 2.0 Adc, IB = 40 mAdc) BD678, 680, 682 BD676A, 678A, 680A Base–Emitter On Voltage (Note 1.) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) BD678, 680, 682 BD676A, 678A, 680A VCE(sat) VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Small–Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) hfe 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. PD, POWER DISSIPATION (WATTS) 50 45 40 35 30 25 20 15 10 5.0 0 15 30 45 60 75 90 105 120 135 150 TC, CASE TEMPERATURE (°C) Figure 1. Power Temperature Derating http://onsemi.com 2 165 – BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 IC, COLLECTOR CURRENT (AMP) 5.0 There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. 2.0 1.0 0.5 BONDING WIRE LIMIT THERMAL LIMIT at TC = 25°C SECONDARY BREAKDOWN LIMIT 0.2 0.1 0.05 1.0 TC = 25°C BD676, 676A BD678, 678A BD680, 680A BD682 2.0 5.0 10 50 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 2. DC Safe Operating Area COLLECTOR PNP BD676, 676A BD678, 678A BD680, 680A BD682 BASE 8.0 k 120 EMITTER Figure 3. Darlington Circuit Schematic http://onsemi.com 3 BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 PACKAGE DIMENSIONS TO–126 TO–225AA CASE 77–09 ISSUE W –B– U F Q –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M DIM A B C D F G H J K M Q R S U V 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE M ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). 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