ETC BD676/D

BD676, BD676A, BD678,
BD678A, BD680, BD680A,
BD682
Plastic Medium-Power
Silicon PNP Darlingtons
http://onsemi.com
...for use as output devices in complementary general–purpose
amplifier applications.
• High DC Current Gain –
•
•
•
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
Monolithic Construction
BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with
BD675, 675A, 677, 677A, 679, 679A, 681
BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
PNP SILICON
45, 60, 80, 100 VOLTS
40 WATTS
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
BD676, BD676A
BD678, BD678A
BD680, BD680A
BD682
VCEO
Collector-Base Voltage
BD676, BD676A
BD678, BD678A
BD680, BD680A
BD682
VCB
Emitter-Base Voltage
VEB
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
0.1
Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
40
0.32
W
W/°C
TJ, Tstg
–55 to +150
°C
Symbol
Max
Unit
RθJC
3.13
°C/W
Operating and Storage Junction
Temperature Range
Value
Unit
Vdc
45
60
80
100
Vdc
TO–225AA
CASE 77
STYLE 1
45
60
80
100
MARKING DIAGRAM
YWW
BD6xxx
Y
WW
BD6xxx
xxx
= Year
= Work Week
= Specific Device Code
= 76, 76A, 78, 78A, 80, 80A or 82
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance –
Junction to Case
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 9
ORDERING INFORMATION
Device
Package
Shipping
BD676
TO–225AA
500 Units/Box
BD676A
TO–225AA
500 Units/Box
BD678
TO–225AA
500 Units/Box
BD678A
TO–225AA
500 Units/Box
BD680
TO–225AA
500 Units/Box
BD680A
TO–225AA
500 Units/Box
BD682
TO–225AA
500 Units/Box
Publication Order Number:
BD676/D
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
BVCEO
45
60
80
100
–
–
–
–
Vdc
Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)
ICEO
–
500
µAdc
Collector Cutoff Current
(VCB = Rated BVCEO, IE = 0)
(VCB = Rated BVCEO. IE = 0, TC = 100°C)
ICBO
–
–
0.2
2.0
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
–
2.0
750
750
–
–
–
–
2.5
2.8
–
–
2.5
2.5
1.0
–
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 1.)
(IC = 50 mAdc, IB = 0)
BD676, 676A
BD678, 678A
BD680, 680A
BD682
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 1.)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
BD676, 678, 680, 682
BD676A, 678A, 680A
hFE
Collector–Emitter Saturation Voltage (Note 1.)
(IC = 1.5 Adc, IB = 30 mAdc)
(IC = 2.0 Adc, IB = 40 mAdc)
BD678, 680, 682
BD676A, 678A, 680A
Base–Emitter On Voltage (Note 1.)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
BD678, 680, 682
BD676A, 678A, 680A
VCE(sat)
VBE(on)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
hfe
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
PD, POWER DISSIPATION (WATTS)
50
45
40
35
30
25
20
15
10
5.0
0
15
30
45
60
75
90
105
120
135
150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating
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2
165
–
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682
IC, COLLECTOR CURRENT (AMP)
5.0
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
2.0
1.0
0.5
BONDING WIRE LIMIT
THERMAL LIMIT at TC = 25°C
SECONDARY BREAKDOWN LIMIT
0.2
0.1
0.05
1.0
TC = 25°C
BD676, 676A
BD678, 678A
BD680, 680A
BD682
2.0
5.0
10
50
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 2. DC Safe Operating Area
COLLECTOR
PNP
BD676, 676A
BD678, 678A
BD680, 680A
BD682
BASE
8.0 k
120
EMITTER
Figure 3. Darlington Circuit Schematic
http://onsemi.com
3
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682
PACKAGE DIMENSIONS
TO–126
TO–225AA
CASE 77–09
ISSUE W
–B–
U
F
Q
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
1 2 3
H
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
---
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
---
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
M
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4
BD676/D