BDX33B D

BDX33B, BDX33C (NPN)
BDX34B, BDX34C (PNP)
Darlington Complementary
Silicon Power Transistors
These devices are designed for general purpose and low speed
switching applications.
Features
• High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0
• Collector−Emitter Sustaining Voltage at 100 mAdc
•
•
•
VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B
= 100 Vdc (min) − BDX33C, BDX334C
Low Collector−Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc
− BDX33B, 33C/34B, 34C
Monolithic Construction with Build−In Base−Emitter Shunt Resistors
These Devices are Pb−Free and are RoHS Compliant*
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DARLINGTON
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
BDX33B, BDX34B
BDX33C, BDX34C
Symbol
Value
Unit
VCEO
Vdc
80
100
1
3
Collector−Base Voltage
BDX33B, BDX34B
BDX33C, BDX34C
VCB
Emitter−Base Voltage
VEB
5.0
Vdc
Collector Current
Continuous
Peak
IC
10
15
Adc
Base Current
IB
0.25
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
70
0.56
W
W/°C
BDX3xyG
TJ, Tstg
−65 to +150
°C
AY WW
Operating and Storage Junction
Temperature Range
Vdc
2
TO−220
CASE 221A
STYLE 1
80
100
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
BDX3xy =
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
Max
Unit
RqJC
1.78
°C/W
A
Y
WW
G
=
=
=
=
Device Code
x = 3 or 4
y = B or C
Assembly Location
Year
Work Week
Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 14
1
Publication Order Number:
BDX33B/D
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
PD, POWER DISSIPATION (WATTS)
80
60
40
20
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
160
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
80
100
−
−
80
100
−
−
80
100
−
−
−
−
0.5
10
−
−
1.0
5.0
IEBO
−
10
mAdc
hFE
750
−
−
VCE(sat)
−
2.5
Vdc
VBE(on)
−
2.5
Vdc
VF
−
4.0
Vdc
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0)
VCEO(sus)
BDX33B/BDX34B
BDX33C/BDX34C
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0, RBE = 100)
Vdc
VCER(sus)
BDX33B/BDX34B
BDX33C/BDX33C
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc)
Vdc
VCEX(sus)
BDX33B/BDX34B
BDX33C/BDX34C
Collector Cutoff Current
(VCE = 1/2 rated VCEO, IB = 0)
Vdc
ICEO
TC = 25°C
TC = 100°C
Collector Cutoff Current
(VCB = rated VCBO, IE = 0)
mAdc
ICBO
TC = 25°C
TC = 100°C
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 3.0 Adc, VCE = 3.0 Vdc)
BDX33B, 33C/34B, 34C
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 6.0 mAdc)
BDX33B, 33C/34B, 34C
Base−Emitter On Voltage
(IC = 3.0 Adc, VCE = 3.0 Vdc)
BDX33B, 33C/34B, 34C
Diode Forward Voltage
(IC = 8.0 Adc)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. Pulse Test non repetitive: Pulse Width = 0.25 seconds.
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2
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P(pk)
0.05
0.1
0.07
0.05
RqJC(t) = r(t) RqJC
RqJC = 1.92°C/W
0.02
t1
0.03
0.01
0.02
t2
SINGLE PULSE
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
SINGLE
PULSE
DUTY CYCLE, D = t1/t2
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
50
100
200 300
500
1000
Figure 1. Thermal Response
500 ms
IC, COLLECTOR CURRENT (AMP)
10
20
100
ms
5.0 ms
1.0 ms
5.0
TC = 25°C
2.0
dc
1.0
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
0.5
0.2
0.1
0.05
0.02
1.0
500 ms
10
IC, COLLECTOR CURRENT (AMP)
20
5.0 ms
1.0 ms
5.0
2.0
1.0
0.5
0.2
0.1
TC = 25°C
dc
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
0.05
BDX34B
BDX34C
2.0 3.0
5.0 7.0
10
20 30
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.02
1.0
70 100
100
ms
BDX33B
BDX33C
2.0 3.0
5.0 7.0
10
20 30
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70 100
Figure 2. Active−Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE limits
of the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 3 is based on TJ(pk)
= 150°C; TC is variable depending on conditions. Second
breakdown pulse limits are valid for duty cycles to 10%
provided TJ(pk) = 150°C. TJ(pk) may be calculated from the
data in Figure 4. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
300
TJ = 25°C
200
C, CAPACITANCE (pF)
hFE, SMALL-SIGNAL CURRENT GAIN
10,000
5000
3000
2000
1000
500
300
200
TJ = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
100
50
30
20
10
2.0
5.0
Cib
70
50
PNP
NPN
1.0
Cob
100
10
20
50 100
f, FREQUENCY (kHz)
30
0.1
500 1000
200
Figure 3. Small−Signal Current Gain
PNP
NPN
0.2
0.5
1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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3
50
100
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
NPN
BDX33B, 33C
PNP
BDX34B, 34C
20,000
20,000
VCE = 4.0 V
VCE = 4.0 V
10,000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
10,000
TJ = 150°C
5000
3000
2000
25°C
1000
-55°C
5000
2000
500
300
200
300
200
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
25°C
1000
500
0.1
TJ = 150°C
3000
5.0 7.0 10
-55°C
0.2 0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
0.1
5.0 7.0 10
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. DC Current Gain
3.0
TJ = 25°C
2.6
IC = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
3.0
TJ = 25°C
2.6
IC = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.4
1.0
0.5 0.7 1.0
0.3
2.0 3.0
5.0 7.0
IB, BASE CURRENT (mA)
10
20
30
Figure 6. Collector Saturation Region
3.0
3.0
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
TJ = 25°C
2.0
VBE(sat) @ IC/IB = 250
1.5
VBE @ VCE = 4.0 V
1.0
VCE(sat) @ IC/IB = 250
2.5
2.0
1.5
VBE @ VCE = 4.0 V
1.0
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
0.5
10
0.1
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
0.5 0.7
1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 7. “On” Voltages
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4
5.0 7.0
10
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
ORDERING INFORMATION
Package
Shipping†
BDX33BG
TO−220
(Pb−Free)
50 Units / Rail
BDX33CG
TO−220
(Pb−Free)
50 Units / Rail
BDX34BG
TO−220
(Pb−Free)
50 Units / Rail
BDX34CG
TO−220
(Pb−Free)
50 Units / Rail
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and the
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For additional information, please contact your local
Sales Representative
BDX33B/D
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