Product Overview

Product Overview
BDX33C: 10 A, 100 V NPN Darlington Bipolar Power Transistor
For complete documentation, see the data sheet
Product Description
The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications.
The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.
Features
• High DC Current Gain hFE = 2500 (typ.) at IC = 4.0
• Collector-Emitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min.) BDX33B, 34B
VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C
• Low Collector-Emitter Saturation Voltage
CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C
• Monolithic Construction with Build-In Base-Emitter Shunt resistors
• TO-220AB Compact Package
• Pb-Free Packages are Available
Part Electrical Specifications
Product
Compliance
Status
Polarity
IC
Continuous
(A)
V(BR)CEO Min
(V)
VCE(sat) Max
(V)
hFE Min (k)
hFE Max (k)
fT Min (MHz) Package
Type
BDX33CG
Pb-free
Active
NPN
10
100
2.5
0.75
-
-
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
TO-220-3