Si4447DY Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 40 ID (A) 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V - 3.9 Qg (Typ.) 9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • CCFL Inverter SO-8 S S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4447DY-T1-E3 (Lead (Pb)-free) Si4447DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS ± 16 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current Single Pulse Avalanche Energy Maximum Power Dissipationa IS L = 0.1 mH TA = 25 °C TA = 70 °C - 3.3 - 3.6 - 2.7 A - 0.9 16 EAS TJ, Tstg Operating Junction and Storage Temperature Range - 30 - 1.7 IAS PD V - 4.5 IDM Continuous Source Current (Diode Conduction)a Avalanche Current ID Unit 13 mJ 2 1.1 1.3 0.7 - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical 50 85 30 Maximum 62.5 110 40 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. Document Number: 73662 S09-0322-Rev. B, 02-Mar-09 www.vishay.com 1 Si4447DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = - 250 µA - 0.8 Typ. Max. Unit - 2.2 V Static Gate-Source Threshold Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA IGSS VDS = 0 V, VGS = ± 16 V ± 100 VDS = - 40 V, VGS = 0 V -1 VDS = - 40 V, VGS = 0 V, TJ = 55 °C - 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea VGS = - 15 V, ID = - 4.5 A 13 Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd trr 14 2 nC 3.6 f = 1 MHz VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω tf Qrr pF 9 tr Body Diode Reverse Recovery Charge V 120 VDS = - 20 V, VGS = - 4.5 V, ID = - 4.5 A td(off) Source-Drain Reverse Recovery Time S - 1.2 85 Rg Fall Time Ω 805 VDS = - 20 V, VGS = 0 V, f = 1 MHz td(on) Rise Time 0.072 - 0.79 Reverse Transfer Capacitance Turn-Off DelayTime 0.059 IS = - 1.7 A, VGS = 0 V Ciss Gate Resistance 0.054 VDS = - 15 V, ID = - 4.5 A Coss µA A 0.045 gfs Output Capacitance nA - 20 VSD Dynamicb Input Capacitance Turn-On Delay Time mV/°C 3.4 VDS ≤ - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 4.5 A RDS(on) Diode Forward Voltagea - 40 IF = 1.7 A, dI/dt = 100 A/µs 11.5 18 8 13 12 18 74 110 38 60 27 45 17 26 Ω ns nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 TC = - 55 °C VGS = 10 V thru 4 V 25 °C 16 I D - Drain Current (A) ID - Drain Current (A) 16 12 3V 8 4 125 °C 12 8 4 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.5 4.0 Document Number: 73662 S09-0322-Rev. B, 02-Mar-09 Si4447DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1240 0.10 992 0.08 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1116 VGS = 4.5 V 0.06 VGS = 10 V 0.04 Ciss 868 744 620 496 372 248 0.02 Coss 124 Crss 0 0.00 0 4 8 12 16 0 20 5 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 35 40 125 150 1.8 6 VGS = 10 V ID = 4.5 A ID = 4.5 A 1.6 5 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 4 VDS = 10 V 3 VDS = 20 V 2 1.4 1.2 1.0 0.8 1 0.6 - 50 0 0 2 4 6 8 10 12 - 25 0 25 50 75 100 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.30 20 ID = 4.5 A 10 RDS(on) - On-Resistance (Ω) 0.25 I S - Source Current (A) TJ = 150 °C TJ = 25 °C 0.20 0.15 TA = 125 °C 0.10 0.05 TA = 25 °C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 73662 S09-0322-Rev. B, 02-Mar-09 10 www.vishay.com 3 Si4447DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 50 40 ID = 250 µA Power (W) V GS(th) Variance (V) 0.4 0.2 0.0 30 20 10 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 600 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 IDM Limited Limited by RDS(on)* ID - Drain Current (A) 10 1 ms 1 10 ms ID(on) Limited 100 ms TA = 25 °C Single Pulse 0.1 1s 10 s DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73662 S09-0322-Rev. B, 02-Mar-09 Si4447DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73662. Document Number: 73662 S09-0322-Rev. B, 02-Mar-09 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1